Watanabe Heiji | Fundamental Research Laboratories Nec Corporation
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概要
関連著者
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Watanabe Heiji
Fundamental Research Laboratories Nec Corporation
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MATSUI Shinji
Fundamental Res. Labs., NEC Corporation
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WATANABE Heiji
Fundamental Research Laboratories, NEC Corporation
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OCHIAI Yukinori
Fundamental Res. Labs., NEC Corporation
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Watanabe Hirohito
Institute Of Material Science University Of Tsukuba
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Watanabe H
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Manaka Susumu
Fundamental Research Laboratories Nec Corporation
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Ichikawa Masakazu
Joint Research Center For Atom Technology
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Baba M
Institute For Solid State Physics University Of Tokyo
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Baba Masakazu
Fundamental Research Laboratories Nec Corporation
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Baba Masakazu
Ntt Information And Communication Systems Laboratories
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WATANABE Hideyuki
Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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ICHIKAWA Masakazu
Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP), c
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BABA Toshio
Fundamental Research Laboratories, NEC Corporation
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Watanabe H
Semiconductor Leading Edge Technol. Inc. Yokohama Jpn
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Ishida M
Sii Nanotechnology Inc.
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Ichikawa Masakazu
Joint Research Center For Atom Technology Angstrom Technology Partnership
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Ichikawa Masakazu
Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp) C
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Ichikawa Mitsuru
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Baba T
Fundamental Research Laboratories Nec Corporation:(present Office)silicon System Laboratories Nec Co
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Baba Toshio
Fundamental And Environmental Research Laboratories Nec Corporation
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IWASA Masayuki
SII Nanotechnology Inc.
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Watanabe Hiroyuki
Semiconductor Leading Edge Technologies Inc.
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Iwasa Masayuki
Sii Nanotechnology Inc. Tokyo Jpn
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Fujita J
Crest-jst
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MANAKO Shoko
Fundamental Res. Labs., NEC Corporation
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FUJITA Jun-ichi
Fundamental Res. Labs., NEC Corporation
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ICHIHASHI Toshinari
NEC Fundamental Research Laboratories
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Mochizuki Yasunori
Fundamental Research Laboratories Nec Corporation
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Mochizuki Yasunori
Fundamental Research Laboratories Nec Coeporation
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WATANABE Hajime
ULSI Laboratory, Mitsubishi Electric Corporation
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BABA Masakazu
Fundamental Research Laboratories, NEC Corporation
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Ono Haruhiko
Microelectronics Research Laboratories Nec Corporation
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ICHIHASHI Toshinari
Fundamental Research Laboratories, NEC Corporation
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Ookubo N
Nec Corp. Kanagawa Jpn
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KIMURA Shigeru
Microelectronics Research Laboratories, NEC Corporation
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Miyata Noriyuki
Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp) C/o National I
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OOKUBO Norio
Fundamental Research Laboratories, NEC Corporation
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Matsui Shinji
Fundamental Research Laboratories Nec Corporation
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Ichikawa Masakazu
Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp) C/o National I
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Ichihashi T
Nec Fundamental Research Laboratories
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Kimura Shigeru
Microelectronics Research Laboratories Nec Corporation
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Watanabe Hideo
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Ichihashi Toshinari
Fundamental Research Laboratories Nec Corporation
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Ichihashi Toshinari
Fundamental and Environmental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
著作論文
- Nanometer-Scale Direct Carbon Mask Fabrication Usirng Electron-Beam-Assisted Deposition
- Mechanism of Layer-by-Layer Oxidation of Si(001)Surfaces by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces
- Mechanism of Layer-by-Layer Oxidation of Si (001) Surfaces Proceeding by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces
- Reverse Dry Etching Using a High-Selectivity Carbon Mask Formed by Electron Beam Deposition
- GaAs Dry Etching Using Electron Beam Induced Surface Reaction
- Novel Process for Visible Light Emission from Si Prepared by Ion Irradiation
- Ten-Nanometer Resolution Nanolithography using Newly Developed 50-kV Electron Beam Direct Writing System : Micro/nanofabrication and Devices
- Ten-Nanometer Resolution Nanolithography using Newly Developed 50-kV Electron Beam Direct Writing System
- Low-Temperature Electron-Beam-Assisted Dry Etching for GaAs Using Electron-Stimulated Desorption
- Electron Beam Irradiation Effects on Cl_2/GaAs
- Atomic-Scale Structure of SiO_2/Si(001) Interface Formed by Furnace Oxidation