Watanabe H | Semiconductor Leading Edge Technol. Inc. Yokohama Jpn
スポンサーリンク
概要
関連著者
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Watanabe H
Semiconductor Leading Edge Technol. Inc. Yokohama Jpn
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WATANABE Hideyuki
Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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Watanabe H
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Watanabe Hirohito
Institute Of Material Science University Of Tsukuba
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WATANABE Hajime
ULSI Laboratory, Mitsubishi Electric Corporation
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Watanabe Hideo
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Mihara T
National Institute Of Advanced Industrial Science And Technology
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Paz De
University Of Colorado At Colorado Springs And Symetrix Corporation
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Mihara Takashi
Applied Research Dept., Corporate Research Division, Olympus Optical Corp., Ltd.
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Watanabe Hitoshi
Applied Research Dept., Corporate Research Division, Olympus Optical Corp., Ltd.
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Mihara Takashi
Applied Research Department Corporate Research Division Olympus Optical Co. Ltd.
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Watanabe Hitoshi
Applied Research Department Corporate Research Division Olympus Optical Co. Ltd.
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KITAJIMA Sumio
Department of Quantum Science and Energy Engineering, Tohoku University, Sendai 980-8579, Japan
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OCHIAI Yukinori
Fundamental Res. Labs., NEC Corporation
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MATSUI Shinji
Fundamental Res. Labs., NEC Corporation
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WATANABE Heiji
Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP), c
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ICHIKAWA Masakazu
Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP), c
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TAKAYAMA Masakazu
Department of Quantum Science and Energy Engineering, Faculty of Engineering, Tohoku University
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WATANABE Hiroshige
Department of Quantum Science and Energy Engineering, Faculty of Engineering, Tohoku University
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Ishida M
Sii Nanotechnology Inc.
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Yoshimori Hiroyuki
Applied Research Dept., Corporate Research Division, Olympus Optical Corp., Ltd.
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Ichikawa Masakazu
Joint Research Center For Atom Technology
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Ichikawa Masakazu
Joint Research Center For Atom Technology Angstrom Technology Partnership
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Ichikawa Masakazu
Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp) C
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Ichikawa Mitsuru
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Manaka Susumu
Fundamental Research Laboratories Nec Corporation
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Kitajima Sumio
Department Of Quantum Science And Energy Engineering Faculty Of Engineering Tohoku University
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IWASA Masayuki
SII Nanotechnology Inc.
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Watanabe Hiroshige
Department Of Nuclear Engineering Faculty Of Engineering Tohoku University
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Takayama Masakazu
Department Of Quantum Science And Energy Engineering Faculty Of Engineering Tohoku University
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Yoshimori Hiroyuki
Applied Research Dept. Corporate Research Division Olympus Optical Corp. Ltd.
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Watanabe Heiji
Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp)
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Iwasa Masayuki
Sii Nanotechnology Inc. Tokyo Jpn
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Yamanaka Sadanori
Nanotechnology Research Institute National Institute Of Advanced Industrial Science And Technology (
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YAMANAKA Shoji
Faculty of Engineering,Hiroshima University
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Fujita J
Crest-jst
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Nakamura Eiji
Department Of Materials Science Faculty Of Science Hiroshima University
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FUJITA Jun-ichi
Fundamental Res. Labs., NEC Corporation
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OKUSHI Hideyo
Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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Inagaki S
Division Of Plasma And Material Science Research Institute For Applied Mechanics Kyushu University
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Inagaki Shigeru
Department Of Quantum Science And Energy Engineering Faculty Of Engineering Tohoku University
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Nakamura Eiji
Department Of Electrical Engineering Faculty Of Engineering Kanagawa University
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Inagaki S
Kek National Laboratory For High Energy Physics
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Okushi H
Electrotechnical Lab. Ibaraki Jpn
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Okushi Hideyo
Energy Technology Research Institute National Institute Of Advanced Industrial Science And Technolog
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Nakamura E
Department Of Quantum Science And Energy Engineering Faculty Of Engineering Tohoku University
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TAKAYAMA Masakazu
Department of Electronics and Information Systems, Akita Prefectural University, Akita 015-0055, Japan
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INAGAKI Shigeru
Division of Plasma and Material Science, Research Institute for Applied Mechanics, Kyushu University
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Araujo Carlos
University Of Colorado At Colorado Springs And Symetrix Corporation
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Fujita K
Oki Electric Industry Co. Ltd. Tokyo
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Fujita K
Department Of Material Chemistry Graduate School Of Engineering Kyoto University
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Nakamura Eiji
Department Of Quantum Science And Energy Engineering Faculty Of Engineering Tohoku University
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Yoshida T
Department Of Electronic Engineering Faculty Of Engineering Takushoku University
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OKUSHI Hideyo
Electrotechnical Laboratory
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KAJIMURA Koji
Electrotechnical Laboratory, Tsukuba Research Center
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TAKEUCHI Daisuke
Electrotechnical Laboratory
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YAMANAKA Sadanori
Electrotechnical Laboratory
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WATANABE Hideyuki
Electrotechnical Laboratory
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YOSHIDA Takeo
Department of Quantum Science and Energy Engineering, Faculty of Engineering, Tohoku University
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Yoshida Tomoaki
Department Of Materials Science Faculty Of Engineering Tohoku University
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WATANABE Hitoshi
Basic Research Dept., Corporate Research Div., Olympus Optical Co., Ltd.
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MIHARA Takashi
Basic Research Dept., Corporate Research Div., Olympus Optical Co., Ltd.
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YOSHIMORI Hiroyuki
Basic Research Dept., Corporate Research Div., Olympus Optical Co., Ltd.
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Yoshida T
Matsushita Electric Co. Tochigi Jpn
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WATANABE Heiji
Fundamental Research Laboratories, NEC Corporation
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Fujita K
Univ. Tokyo Tokyo Jpn
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Kajimura K
Electrotechnical Laboratory
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Watanabe H
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Ogura M
Jst‐crest Ibaraki Jpn
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Kajimura Koji
Electrotechnical Laboratory
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Tachiki Minoru
School Of Science And Engineering:crest Jst (japan Science And Technology Corporation)
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Ogura Masahiko
Energy Technology Research Institute National Institute Of Advanced Industrial Science And Technolog
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Watanabe Heiji
Fundamental Research Laboratories Nec Corporation
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Takeuchi Daisuke
Energy Technology Research Institute National Institute Of Advanced Industrial Science And Technolog
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Yoshida T
Fukuoka Univ. Fukuoka Jpn
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Tachiki M
Energy Technology Research Institute National Institute Of Advanced Industrial Science And Technolog
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Taniuchi Hirotada
School Of Science And Engineering Waseda University
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Inoue M
Department Of Electrical Engineering Osaka Prefectural Technical College
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Inoue M
Osaka Inst. Technol. Osaka Jpn
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Inoue M
Setsunan Univ. Osaka Jpn
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Kobayashi K
Dep. Of Electronic Sci. And Engineering Kyoto Univ. Katsura Nishikyo Kyoto 615-8510 Japaninnovative
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KAWAMURA Takaaki
Department of Mathematics and Physics, University of Yamanashi
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Araujo Carlos
Symetrix Corporation
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Inoue Masami
Association Of Super-advanced Electronics Technologies (aset)
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Inoue M
Assoc. Super‐advanced Electronics Technol. (aset) Yokohama Jpn
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Inoue M
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
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Inoue M
Kyoto Univ. Kyoto Jpn
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Inoue Masumi
Department Of Quantum Engineering Nagoya University
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KUROKAWA Hisayoshi
Department of Electrical and Electronic Engineering, Ehime University
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Fujita Shinobu
O National Institute For Advanced Interdisciplinary Research (nair)
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MANAKO Shoko
Fundamental Res. Labs., NEC Corporation
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KOBAYASHI Naoto
Electrotechnical Laboratory
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Tokuda Norio
Nanotechnology Research Institute National Institute Of Advanced Industrial Science And Technology (
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Tokuda N
Univ. Tsukuba Ibaraki Jpn
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MAKINO Toshiharu
Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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TOKUDA Norio
Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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KATO Hiromitsu
Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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OGURA Masahiko
Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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RI Sung-Gi
Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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YAMASAKI Satoshi
Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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OGATA Tamotsu
ULSI Laboratory, Mitsubishi Electric Corporation
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KOBAYASHI Kiyoteru
ULSI Laboratory, Mitsubishi Electric Corporation
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KUROKAWA Hiroshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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HIRAYAMA Makoto
ULSI Laboratory, Mitsubishi Electric Corporation
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Kobayashi K
Kobe Steel Ltd. Kobe Jpn
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MARUNO Shigemitsu
Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP), c
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FUJITA Ken
o National Institute for Advanced Interdisciplinary Research (NAIR)
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Kamigaki K
College Of Liberal Arts Toyama University
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Inoue Masataka
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
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HASEGAWA Masataka
Electrotechnical Laboratory
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OGURA Masahiko
Electrotechnical Laboratory
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MASAI Shigeo
Electrotechnial Laboratory
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Kinoshita K
Ntt Basic Research Laboratories
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Ogata Toshihiro
Department Of Electronic Engineering Faculty Of Science And Engineering Saga University
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Matsui Yasushi
Electronics Research Laboratory Corporate Research & Development Matsushita Electronics Corporat
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KUDOH Ryohta
Department of Nuclear Engineering, Faculty of Engineering, Tohoku University
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Kudoh Kazuhide
Department Of Applied Physics Tokyo University Of Science
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Inoue M
Advanced Technology R&d Center Mitsubishi Electric Corp.
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Tokuda Norio
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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INOUE Morio
Kyoto Research Laboratory, Matsushita Electronics Corporation
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ICHIHASHI Toshinari
NEC Fundamental Research Laboratories
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Kunihiro Kazuaki
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
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Mochizuki Yasunori
Fundamental Research Laboratories Nec Corporation
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Mochizuki Yasunori
Fundamental Research Laboratories Nec Coeporation
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Kurokawa Hisayoshi
Department Of Electrical And Electronic Engineering Ehime University
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Kitazawa Koichi
Ntt Basic Research Laboratories
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Kurihara K
Ntt Basic Research Laboratories
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Ogata T
Ulsi Development Center Mitsubishi Electric Corp.
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MATSUI Yasuji
ULSI Laboratory, Mitsubishi Electric Corporation
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Ri Sung-gi
Nanotechnology Research Institute National Institute Of Advanced Industrial Science And Technology (
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ATA Masafumi
Sony Corporation Research Center
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WATANABE Haruo
Sony Corporation Research Center
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MACHIDA Masataka
Sony Corporation Research Center
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BABA Masakazu
Fundamental Research Laboratories, NEC Corporation
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Kurokawa Hiroshi
Advanced Technology R&d Center Mitsubishi Electric Corp
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Inoue Morio
Kyoto Research Laboratory Matsushita Electronics Corp.
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Muto Y
The Institute For Materials Research Tohoku University
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Baba M
Institute For Solid State Physics University Of Tokyo
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Ono Haruhiko
Microelectronics Research Laboratories Nec Corporation
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Ata Masafumi
Research Center Sony Corporation
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Masai Shigeo
Electrotechnial Laboratory:tokai University
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Tokuda Norio
Institute Of Science And Engineering Kanazawa University
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Baba Masakazu
Fundamental Research Laboratories Nec Corporation
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Baba Masakazu
Ntt Information And Communication Systems Laboratories
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TODOKORO Yoshihiro
Kyoto Research Lab., Matsushita Electronics Corp.
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Takeuchi N
Chiba Univ. Chiba Jpn
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Kato Hiromitsu
Energy Technology Research Institute National Institute Of Advanced Industrial Science And Technolog
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Machida M
Unicamp Institute Of Physics "gleb Wataghin" Deq
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FUJITA Ken
Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP)
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Zama Tatsuya
Department Of Nuclear Engineering Faculty Of Engineering Tohoku University
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TAKEUCHI Nobunao
Department of Electrical Engineering, Faculty of Engineering, Tohoku University
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WATANABE Hisashi
Kyoto Research Laboratory, Matsushita Electronics Co
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Takeuchi Nobunao
Department Of Electrical Engineering Faculty Of Engineering Tohoku Universicy
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Kudoh Ryohta
Department Of Nuclear Engineering Faculty Of Engineering Tohoku University:toshiba Corporation Isogo
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ICHIHASHI Toshinari
Fundamental Research Laboratories, NEC Corporation
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Sugiura Emiko
Kyoto Research Laboratory Matsushita Electronics Corporation
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Kawamura Takaaki
Department Of Mathematics And Physics University Of Yamanashi
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Kawamura Takaaki
Department Of Physics Yamanashi University
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Tokuda N
Institute Of Science And Engineering Kanazawa University
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Todokoro Y
Kyoto Research Laboratory Matsushita Electronics Corporation
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Todokoro Yoshihiro
Kyoto Research Lab. Matsushita Electronics Corporation
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Ookubo N
Nec Corp. Kanagawa Jpn
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IMORIYA Tadashi
Kyoto Research Laboratory, Matsushita Electronics Corporation
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Kurokawa H
Department Of Electrical And Electronic Engineering Ehime University
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KIMURA Shigeru
Microelectronics Research Laboratories, NEC Corporation
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Matsui Yasuji
Ulsi Laboratory Mitsubishi Electric Corporation
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Hirayama M
Ulsi Laboratory Mitsubishi Electric Corporation
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Hirayama Makoto
Lsi R&d Lab. Mitsubishi Electric Corp.
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Hirayama Makoto
Ulsi Laboratory Mitsubishi Electric Corporation
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Maruno Shigemitsu
Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp) C
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OOKUBO Norio
Fundamental Research Laboratories, NEC Corporation
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Yamasaki Satoshi
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Kawamura Takaaki
Department Of Applied Physics School Of Science And Engineering Waseda University
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Imoriya Tadashi
Kyoto Research Laboratory Matsushita Electronics Corporation
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Ichihashi T
Nec Fundamental Research Laboratories
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Kimura Shigeru
Microelectronics Research Laboratories Nec Corporation
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Ichihashi Toshinari
Fundamental Research Laboratories Nec Corporation
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Makino Toshiharu
Energy Technology Research Institute National Institute Of Advanced Industrial Science And Technolog
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Makino Toshiharu
Diamond Research Center National Institute Of Advanced Industrial Science And Technology
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Watanabe Hajime
Ulsi Laboratory Mitsubishi Electric Corporation
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Yoshida Takeo
Department Of Quantum Science And Energy Engineering Faculty Of Engineering Tohoku University
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Ogata Tamotsu
ULSI Development Center, Mitsubishi Electric Corp.
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Yoshida Takeo
Department of Cardiovascular Medicine, Nagasaki University Graduate School of Biomedical Sciences
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Ichihashi Toshinari
Fundamental and Environmental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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KOBAYASHI Kiyoteru
ULSI Laboratory, Evaluation amp Analysis Center, Mitsubishi Electric Corporation
著作論文
- High-Efficiency Excitonic Emission with Deep-Ultraviolet Light from (001)-Oriented Diamond p-i-n Junction
- Electron-Beam-Induced Selective Thermal Decomposition of Ultrathin SiO_2 Layers Used in Nanofabrication
- n-Type Control by Sulfur Ion Implantation in Homoepitaxial Diamond Films Grown by Chemical Vapor Deposition
- High-Quality B-Doped Homoepitaxial Diamond Films using Trimethylboron
- Influence of Biased Electrode on Plasma Confinement in the Tohoku University Heliac
- Particle Transport Study with an Electron Beam in the Tohoku University Heliac
- Potential Structure Measurements of ECH Plasma in a Helical Axis Stellarator
- Preparation of Ferroelectric Thin Films of Bismuth Layer Structured Compounds
- Depolarization Characteristics in Sol-Gel Ferroelectric Pb(Zr_Ti_)O_3 Thin-Film Capacitors
- Characteristics of Bismuth Layered SrBi_2Ta_2O_9 Thin-Film Capacitors and Comparison with Pb(Zr, Ti)O_3
- Origin of Depolarization in Sol-Gel Ferroelectric Pb(Zr_Ti_)O_3 Thin-Film Capacitors
- Characteristic Change Due to Polarization Fatigue of Sol-Gel Ferroelectric Pb(Zr_Ti_)O_3 Thin-Film Capacitors ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Polarization Fatigue Characteristics of Sol-Get Ferroelectric Pb(Zr_Ti_)O_3 Thin-Film Capacitors
- Evaluation of Imprint Properties in Sol-Get Ferroelectric Pb(ZrTi)O_3 Thin-Film Capacitors
- High-Quality CVD/Thermal Stacked Gate Oxide Films with Hydrogen-Free CVD SiO_2 Formed in a SiCl_4-N_2O System
- Self-Developing Properties of an Inorganic Electron Beam Resist and Nanometer-Scale Patterning Using a Scanning Electron Beam
- Electron-Stimulated Desorption and in situ Scanning Electron Microscopy Study on Self-Developing Reaction of High-Resolution Inorganic Electron Beam Resist
- Polymer-C_ Composite with Ferromagnetism
- Nanometer-Scale Direct Carbon Mask Fabrication Usirng Electron-Beam-Assisted Deposition
- Layer-by-Layer Oxidation of Si(001) Surfaces
- Frequency Spectrum of Fluctuations Near a Rational Surface in a Toroidal Heliac
- Detection and Printability of Shifter Defects in Phase-Shifting Masks II. : Defocus Characteristics
- Novel Process for Visible Light Emission from Si Prepared by Ion Irradiation