Kamigaki K | College Of Liberal Arts Toyama University
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概要
関連著者
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Kamigaki K
College Of Liberal Arts Toyama University
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Kobayashi K
Dep. Of Electronic Sci. And Engineering Kyoto Univ. Katsura Nishikyo Kyoto 615-8510 Japaninnovative
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Kobayashi K
Kobe Steel Ltd. Kobe Jpn
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Kishio Kohji
Department Of Applied Chemistry University Of Tokyo:sorst Japan Science And Technology Corporation (
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Kinoshita K
Ntt Basic Research Laboratory
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山田 弘司
核融合科学研究所
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Hamada Y
Nagoya Municipal Industrial Res. Inst. Nagoya Jpn
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松重 和美
京都大学工学研究科電子物性工学専攻
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松重 和美
Dep. Of Electronic Sci. And Engineering Kyoto Univ. Katsura Nishikyo Kyoto 615-8510 Japaninnovative
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YAMADA HIROFUMI
Department of Surgery, Saitama Medical Center, Saitama Medical School
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MATSUSHIGE Kazumi
Department of Electronic Science and Engineering, Kyoto University
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山田 啓文
Department Of Electronic Science And Engineering Kyoto University
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HAMADA Yasuji
National Institute for Fusion Science
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Yamada H
Department Of Electronics Nagoya University
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山田 啓文
京都大学工学研究科電子工学専攻
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堀内 敏行
東京電機大学工学部
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Horiuchi T
東京電機大
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HORIUCHI Toshihisa
Department of Electric Science and Engineering, Graduated School of Kyoto University
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山田 啓文
Dep. Of Electronic Sci. And Engineering Kyoto Univ. Katsura Nishikyo Kyoto 615-8510 Japaninnovative
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松重 和美
京都大学大学院工学研究科
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Fukuma T
Dep. Of Electronic Sci. And Engineering Kyoto Univ. Katsura Nishikyo Kyoto 615-8510 Japaninnovative
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Fujii T
Japan Telecom Co. Ltd. Tokyo Jpn
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KOBAYASHI Kei
International Innovation Center, Kyoto University
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FUJII Toru
Nikon Corporation
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KOBAYASHI Kei
Department of Eletronic Science and Engineering Kyoto university
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山田 晃
東京農工大学生物システム応用科学府
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Tanaka Kuniaki
Department Of Electronics And Mechanical Engineering Chiba University
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山口 滋
Department Of Physics School Of Science Tokai University
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松重 和美
京大工
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Matsushima Shigenori
Department of Materials Science and Chemical Engineering, Kitakyushu National College of Technology
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TSUKAMOTO Takeyo
Department of Applied Physics, Tokyo University of Science
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Okamoto S
Tottori Univ. Tottori Jpn
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Inoue Yasuo
Lsi Research & Development Laboratory Mitsubishi Electric Corporation
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Ogura Ichiro
Maxillofacial Surgery Graduate School Tokyo Medical And Dental University:department Of Radiology Ni
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Ogura I
Opto-electronics Research Laboratories Nec Corporation
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Okamoto Shinji
Nhk Science And Technical Research Laboratories
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FUKUMA Takeshi
Department of Electronic Science and Engineering, Kyoto University
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HIGUCHI Tohru
Department of Applied Physics, Tokyo University of Science
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YAMAGUCHI Shu
Department of Materials and Science, University of Tokyo
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KOBAYASHI Kiyoshi
National Institute of Advanced Industrial Science and Technology
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Yamaguchi S
Hitachi Ltd. Tokyo Jpn
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TANAKA Katsu
NHK Science and Technical Research Laboratories
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SHIN Shik
Institute for Solid State Physics, University of Tokyo
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Kosuge Koji
Department Of Chemistry Faculty Of Science Kyoto University
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Kosuge K
Division Of Chemistry Graduate School Of Science Kyoto University
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FUJIWARA Kozo
Institute for Materials Research (IMR), Tohoku University
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Shin S
Institute For Solid State Physics University Of Tokyo
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Ohno Yoshikazu
Ulsi Laboratory Mitsubishi Electric Corporation
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OGATA Tamotsu
ULSI Laboratory, Mitsubishi Electric Corporation
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KOBAYASHI Kiyoteru
ULSI Laboratory, Mitsubishi Electric Corporation
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KUROKAWA Hiroshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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HIRAYAMA Makoto
ULSI Laboratory, Mitsubishi Electric Corporation
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Kobayashi Kei
Department Of Biotechnology And Life Sciences Tokyo University Of Agriculture And Technology
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秋光 純
青学大理工
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KISHIO Kohji
Department of Superconductivity, Graduate School of Engineering, University of Tokyo
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AKIMITSU Jun
Department of Physics, Aoyama Gakuin University
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NAGATA Takashi
Department of Physics, Aoyama-Gakuin University
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樋口 透
東理大理
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Hasegawa Takahi
Department Of Physics Faculty Of Science Ehime University
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OZAKI Masanori
Department of Electronic Engineering, Graduate School of Engineering, Osaka University
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YOSHINO Katsumi
Department of Electronic Engineering, Graduate School of Engineering, Osaka University
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Takahashi Sumio
Department Of Applied Physics The National Defense Academy
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Higuchi T
Department Of Applied Physics Tokyo University Of Science
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Takagi H
Univ. Tokyo Tokyo Jpn
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Sano Naokatsu
Faculty Of Science Kwansei-gakuin University
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Sano Naokatsu
Department Of Physics School Of Science Kwansei Gakuin University
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Sano Naokatsu
School Of Science Kwansei Gakuin University
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Onabe Kentaro
Department Of Applied Physics The University Of Tokyo
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SANO Naoki
Sony Research Center
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KINOSHITA Kyoichi
NTT Basic Research Laboratory
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Kajita M
Opto-electronics Research Laboratories Nec Corporation
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SHIRAKI Yasuhiro
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo
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Kishio Kohji
Department Of Applied Chemistry Faculty Of Engineering University Of Tokyo
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Saito Hironobu
Fukushima Toyo Communication Equipment Co. Ltd.
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Miyoshi S
Univ. Tokyo Tokyo Jpn
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TERAMOTO Akinobu
ULSI Development Center, Mitsubishi Electric Corporation
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KUROKAWA Hisayoshi
Department of Electrical and Electronic Engineering, Ehime University
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Sano Naokatsu
Department Of Physics Faculty Of Science Kwansei Gakuin University
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KOBAYASHI Kei
Innovative Collaboration Center, Kyoto University
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Akimitsu Jun
Department Of Physics And Mathematics Aoyama Gakuin University
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Yoshino Katsumi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Shin S
Riken/spring-8
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FUKUSHIMA Akiko
Institute for Solid State Physics, University of Tokyo
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YAGUCHI Hiroyuki
Department of Applied Physics, The University of Tokyo
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KOBAYASHI Kentaro
Department of Electronic Engineering, Faculty of Engineering, Osaka University
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KOBAYASHI Kiyoteru
Mitsubishi Electric Corporation, ULSI Laboratory
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HIRAYAMA Makoto
Mitsubishi Electric Corporation, ULSI Laboratory
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OKI Kensuke
Department of Electronics, Kyoto Institute of Technology
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Hatano T
The Institute For Solid State Physics The University Of Tokyo
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SAITO Hisao
NTT Basic Research Laboratories
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Nakanishi T
Delft Univ. Technol. Lorentzweg Delft Nld
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Nakanishi T
Delft Univ. Technol. Delft Nld
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Oki K
Department Of Materials Science And Technology Graduate School Of Engineering Sciences Kyushu Univer
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Oki Kensuke
Department Of Advanced Science For Electronics And Materials Kyushu University
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KUWANO Noriyuki
Department of Applied Science for Electronics and Materials, Kyushu University
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Hashimoto T
Nec Corp. Kanagawa Jpn
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UEHARA Masatomo
Department of Physics,Aoyama-Gakuin University
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MIYAZAKI Takashi
Department of Oral Biomaterials and Technology, School of Dentistry, Showa University
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ISHIDA Kenji
Department of Physics, Graduate School of Science, Kyoto University
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Watanabe Takashi
Department of Chemistry, Graduate School of Science, Kyoto University
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田中 皓一
名古屋工業大学
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Eisaki Hiroshi
Engineering Research Institute The University Of Tokyo
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Eisaki Hiroshi
The Department Of Advanced Materials Science The University Of Tokyo
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Kosuge K
Department Of Chemistry Kyoto University
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SHIRAKAWA Hideki
Institute of Material Science, University of Tsukuba
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一井 崇
Department Of Materials Science And Engineering Kyoto University
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堀内 俊寿
京都大学大学院工学研究科
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HASEGAWA Tetsuya
Department of Management and Information Science, Kyushu School of Engineering, Kinki University
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NAKAYAMA Yoshimi
Department of Industrial Chemistry, University of Tokyo
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KITAZAWA Koichi
Department of Industrial Chemistry, University of Tokyo
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KAWAI Shigeru
Opto-Electronics Research Laboratories, NEC Corporation
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Nunoshita M
Graduate School Of Materials Science Nara Institute Of Science And Technology
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TAKEUCHI Tomoyuki
Department of Applied Physics, Tokyo University of Science
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TAKAHASHI Hiroki
Institute of Advanced Energy, Kyoto University
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MORI Nobuo
Institute of Solid State Physics, University of Tokyo
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Kosuge Koji
Department Of Chemistry Kyoto University
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石田 謙司
神戸大学
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Ichii T
Department Of Electronic Science And Engineering Kyoto University
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Nunoshita M
Mitsubishi Electric Corp. Hyogo Jpn
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Nunoshita Masahiro
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Nunoshita Masahiro
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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NUNOSHITA Masahiro
Materials & Electronic Devices Laboratory, Mitsubishi Electric Corporation
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KOINUMA Hideomi
Materials and Structures Laboratory, Tokyo Institute of Technology
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Arima Hideaki
Ulsi Development Center Mitsubishi Electric Corp.
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Ichii Takashi
Department Of Electronic Science And Engineering Kyoto University
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Fujii T
Nikon Corporation
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Wake Setsuo
Ulsi Development Center Mitsubishi Electric Corp.
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Horie Kazuo
Department Of Electronic System And Information Engineering Faculty Of Biology-oriented Science And
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Tada Kentaro
Opto-electronics Research Laboratories Nec Corporation
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Sato J
Hitachi Cable Ltd. Ibaraki Jpn
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Abe Tomohiko
Fujitsu Limited
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Watanabe Teruo
Futaba Corporation
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Koinuma H
National Institute For Materials Science (nims)
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Watanabe T
Components Development Group Sony Corporation
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Watanabe T
Ritsumeikan Univ. Shiga Jpn
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Watanabe Tetsu
Components Development Group Sony Corporation
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WATANABE Toshihide
ATR Optical and Radio Communication Research Laboratory
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Watanabe T
Tokyo Inst. Technol. Kanagawa Jpn
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Ishida Koichi
Optoelectronics Joint Research Laboratory:(present Address) Fundamental Research Laboratories Nec Co
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Ishida K
Optoelectronics Joint Research Laboratory
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IKUTA Hiroshi
Department of Crystalline Materials Science, Nagoya University
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Taniguchi H
Mitsubishi Cable Ind. Ltd. Hyogo Jpn
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Watanabe T
Reserch And Development Division Toto Ltd.
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HIRATA Yoshiki
National Institute of Advanced Industrial Science and Technology
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KAJITA Teruyuki
Department of Electronic Science and Engineering, Kyoto University
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URABE Masashi
Venture Business Laboratory, Kyoto University
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KIMURA Kuniko
Innovative Cluster Creation Project, Kyoto University
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SATOH Nobuo
Department of Electronic Science and Engineering, Kyoto University
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WATANABE Shunji
Nikon Corporation
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UMEDA Keiichi
Department of Electronic Science and Engineering, Kyoto University
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UMEMURA Junzo
Institute for Chemical Research, Kyoto University
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Kawai S
Opto-electronics Research Laboratories Nec Corporation
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Kawai Shigeru
Opto-electronics Research Laboratories Nec Corporation
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Skarp Kent
Chalmers University Of Technology Physics Department
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Skarp Kent
Physics Department Chalmers University Of Technology
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Fujiwara Kozo
Institute For Materials Research (imr) Tohoku University
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KOINUMA Hideomi
Tokyo Institute of Technology
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HATTORI Takeshi
Department of Applied Physics, Tokyo University of Science
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TEZUKA Yasuhisa
Department of Electronic and Information System Engineering, Hirosaki University
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HELGEE Bertil
Department of Polymer Technology, Chalmers University of Technology
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UTO Sadahito
Department of Electronic Engineering, Faculty of Engineering, Osaka University
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SVENSSON Magnus
Department of Polymer Technology, Chalmers University of Technology
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MYOJIN Katsunori
Department of Electronic Engineering, Faculty of Engineering, Osaka University
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EISAKI Hiroshi
Department of Superconductivity,University of Tokyo
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WATANABE Hideyuki
Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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UCHIDA Shin-ichi
Department of Applied Physics,University of Tokyo
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BAN Cozy
ULSI Laboratory, Mitsubishi Electric Corporation
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UEYAMA Akemi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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MURANAKA Seiji
ULSI Laboratory, Mitsubishi Electric Corporation
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HAYASHI Tomohiko
Ryoden Semiconductor System Engineering Corporation
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KOBAYASHI Junji
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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TERAMOTO Akinobu
Mitsubishi Electric Corporation, ULSI Laboratory
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OHNO Yoshikazu
Mitsubishi Electric Corporation, ULSI Laboratory
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SHIMOYAMA Jun-ichi
Department of Industrial Chemistry, University of Tokyo
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Mori Nobuo
Saitama Study Center The Open University Of Japan
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Miyazaki T
Department Of Electric Science And Engineering Graduated School Of Kyoto University
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MURAYAMA Chizuko
Institute for Solid State Physics, The University of Tokyo
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Ishida K
Semiconductor System Engineering Center Toshiba Corporation
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Hotta Hitoshi
Opto-electronics Research Laboratories Nec Corporation
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Hotta Hitoshi
Department Of Physics Faculty Of Science Tokyo Institute Of Technology
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Takeuchi Tetsuya
Department Of Electrical And Electronic Engineering Meijo University
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Hattori T
Department Of Applied Physics Tokyo University Of Science
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Takei H
Tohoku Univ. Sendai Jpn
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Satoh K
Department Of Electronic Engineering Faculty Of Engineering Osaka University:(present Address) Resea
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Togawa Yoshihiko
Department Of Superconductivity University Of Tokyo
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Taniguchi H
Kyushu Univ. Fukuoka Jpn
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Tezuka Y
Hirosaki Univ. Hirosaki Jpn
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Tezuka Yasuhisa
Hirosaki University
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Tezuka Yasuhisa
Institute For Solid State Physics The University Of Tokyo
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SASAGAWA Takao
Department of Advanced Materials Science, University of Tokyo
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NAKANISHI Takeshi
Institute for Solid State Physics,University of Tokyo
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TAKAHASHI Hiroki
College of Humanities and Science,Nihon University
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MOTOYAMA Naoki
Department of Superconductivity,University of Tokyo
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MORI Nobuo
NTT Basic Recarch Laboratories
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Eisaki Hiroshi
Department Of Applied Physics The University Of Tokyo
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Watanabe T
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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Watanabe T
Tohoku Univ. Sendai Jpn
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Koinuma Hideomi
Materials And Structures Labolatory Tokyo Institute Of Technology
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Koinuma Hideomi
Department Of Applied Physics Graduate School Of Engineering Nagoya University
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Koinuma Hideomi
Crest Japan Science And Technology Corporation
著作論文
- Molecular resolution imaging of protein molecules in liquid using frequency modulation atomic force microscopy
- Self-Assembled Monolayers of Alkanethiol and Fluoroalkanethiol Investigated by Noncontact Atomic Force Microscopy
- Orientation Control of High-Density Polyethylene Molecular Chains Using Atomic Force Microscope
- Investigations of Local Surface Properties by SNOM Combined with KFM Using a PZT Cantilever(Special Issue on Near-Field Optics and Its Applications)
- Fabrication of Nanometer-Scale Pattern Using Current-Controlled Scanning Probe Lithography
- Experimental Study on Energy Dissipation Induced by Displacement Current in Non-contact Aomic Force Microscopy Imaging of Molecular Thin Films
- Nanometer-Scale Characterization of Ferroelectric Polymer Thin Films by Variable-Temperature Atomic Force Microscopy
- Structures and Electrical Properties of Fullerene Thin Films on Si(111)-7×7 Surface Investigated by Noncontact Atomic Force Microscopy
- Dynamic Force Microscopy Investigations of C_ Deposited on Si(111) Surface
- The Molecular Arrangements of Alkanethiol Self-Assembled Monolayers on Au(111) Studied by Scanning Tunneling Microscopy
- Structural Study on Self-Assembled Monolayers of Alkanedithiol Molecules
- Electronic Structure of Ce_Nd_xO_ Probed by Soft-X-Ray Spectroscopy
- Band Structure of TiO_2-Doped Yttria-Stabilized Zirconia Probed by Soft-X-Ray Spectroscopy
- Second-Harmonic Generation in Smectic A Phase of Ferroelectric Liquid Crystal Induced by Electroclinic Effect
- Impact of Organic Contaminants from the Environment of Electrical Characteristics of Thin Gate Oxides
- Highly Reliable SiO_2 Films Formed by UV-O_2 Oxidation
- Highly Reliable SiO_2 Films Formed by UV-O_2 Oxidation
- High-Pressure Transport Properties of the Superconducting Spin-Ladder System Sr_Ca_xCu_O_
- Superconductivity in the Ladder Material Sr_Ca_Cu_O_
- A Novel Fabrication Method for Polycrystalline Silicon Thin-Film Transistors with a Self-Aligned Lightly Doped Drain Structure
- Formation of Cubic GaN on (111)B GaAs by Metal-Organic Vapor-Phase Epitaxy with Dimethylhydrazine
- Transmission Electron Microscope Observation of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy with Dimethylhydrazine on (001) GaAs
- Local Magnetic Properties of Underdoped La_Sr_χ CuO_4 Single Crystal Probed by Scanning Superconducting Quantum Interference Device Microscopy : Superconductors
- Studies on Anisotropy of Oxide Superconductors by STM/STS and Magnetization Measurements : III-A Superconducting Characteristics : III Oxide Superconductors, Experiments III : Superconducting State
- 650 nm AlGaInP Visible Light Laser Diode with Dry-Etched Mesa Stripe
- Electronic Structure in the Bulk State of Protonic Conductor CaZrO_3 by Resonant Soft-X-Ray Emission Spectroscopy : Electrical Properties of Condensed Matter
- A Multiple Wavelength Vertical-Cavity Surface-Emitting Laser (VCSEL) Array for Optical Interconnection
- Thermal Analysis of Laser-Emission Surface-Normal Optical Devices with a Vertical Cavity
- Impact of Thermal Nitridation on Microscopic Stress-Induced Leakage Current in Sub-10-nm Silicon Dioxides
- Novel Dual Wavelength Electro-Optical Bistability in InGaAs/AlGaAs Multiple Quantum Wells
- Dual Wavelength Electro-Optical Bistability in an Asymmetric Self-Electro-Optic Effect Device
- Photoemission Study on Protonic Conductor CaZrO_3:Evidence of the Exchange Mechanism of Proton and Hole
- Repetitive One-Tenth Micron Pattern Fabrication Using An EB Block Exposure System
- Electron Beam Block Exposure System for 256 M Dynamic Random Access Memory Lithography
- 'NOWEL-2' Variable-Shaped Electron Beam Lithography System for 0.1 μm Patterns with Refocusing and Eddy Current Compensation
- Electron Beam Block Exposure : Electron Beam Lithography
- Electron Beam Block Exposure
- High-Quality CVD/Thermal Stacked Gate Oxide Films with Hydrogen-Free CVD SiO_2 Formed in a SiCl_4-N_2O System
- Kinetic Study of Silicon Nitride Growth from Dichlorosilane and Ammonia
- Uniformity Improvement of Optical and Electrical Characteristics in Integrated Vertical-to-Surface Transmission Electro-Photonic Device with a Vertical Cavity
- Transmission Self-Electro-Optic Effect Devices Based on Wannier-Stark Localization in a GaAs/AlAs Superlattice
- High-Resolution Frequency-Modulation Atomic Force Microscopy in Liquids Using Electrostatic Excitation Method
- Electrical Characterization of Lateral P-N Junctions Grown on (111)A GaAs Nonplanar Substrates by Molecular Beam Epitaxy
- Estimation of the Surface State Density of N-Type (111)A GaAs Grown Using Molecular Beam Epitaxy
- Titanium/Gold Schottky Contacts on P-Type GaAs Grown on (111)A and (100) GaAs Substrates Using Molecular Beam Epitaxy
- Double-Mesa-Structure Vertical-to-Surface Transmission Electro-Photonic Device with a Vertical Cavity
- Pixels Consisting of Double Vertical-Cavity Detector and Single Vertical-Cavity Laser Sections for 2-D Bidirectional Optical Interconnections
- Liquid Crystalline Behaviors of Conducting Polyacetylene Derivative with Mesogenic Substituent and Its Mixture with Ferroelectric Liquid Crystal
- Thermal Cracking Effects of CeCl_3 Dopant on Blue Electroluminescent Properties in SrGa_2S_4:Ce Thin Films
- Ce-Activated SrS Thin Film Electroluminescent Devices Fabricated by Multi Source Deposition Using Ga_2S_3 Precursor
- Dependence on Ce Concentration of Blue Emission and Crystallographic Properties in SrGa_2S_4:Electroluminescent Thin Films Grown by Molecular Beam Epitaxy
- Preparation of ZBLAN Fluoride Glass Particles by Chemical Vapor Deposition Process
- Oxygen Doping Effects on Thermal Properties of ZrF_4-BaF_2 Glasses Synthesized by Plasma-Enhanced Chemical Vapor Deposition
- Blue Electroluminescent SrGa_2S_4:Ce Thin Films Grown by Molecular Beam Epitaxy
- Mechanism of Photoinduced Charge Transfer in Co(Li)-Doped ZnO Film
- Theoretical Consideration on Photochromism of an Oxide Doped with Transition-Metal Ions in Strong Electric Field
- NO_2 Sensitive Ga-doped ZnO Thin Film
- Electrical and Optical Properties of Ca_Sr_xCuO_2 Films Prepared by Organometallic Chemical Vapor Deposition Method
- Uber RuВbildung des Azetylens hinter Reflektierten StoВwellen
- Atomic-Resolution Imaging of Graphite-Water Interface by Frequency Modulation Atomic Force Microscopy