Inoue Yasuo | Lsi Research & Development Laboratory Mitsubishi Electric Corporation

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概要

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著作論文

Saturation Phenomenon of Stress-Induced Gate Leakage Current
One-step grown aligned bulk carbon nanotubes by chloride mediated chemical vapor deposition
Resonant-tunneling electron emitter in an AlN∕GaN system
Strong luminescence from dislocation-free GaN nanopillars
AlN/GaN Near-Infrared Quantum-Cascade Structures with Resonant-Tunneling Injectors Utilizing Polarization Fields : Semiconductors
PbSnCaTe Films and PbSnCaTe/PbSnTe Superlattices Prepared by Molecular Beam Epitaxy(Semiconductors)
Quantum-Cascade Structure in AlN/GaN System Assisted by Piezo-Electric Effect : Semiconductors
Analysis of Light-Induced Degradation in Amorphous Silicon Alloy Solar Cells and Its Application to Accelerated Test Method
Atomic Composition and Structural Properties of Blue Emitting BaAl_2S_4:Eu Electroluminescent Thin Films
UV-Absorbing Substance in the Red Alga Porphyra yezoensis (Bangiales, Rhodophyta) Block Thymine Photodimer Production
Measurement of Fluorescence Quantum Yield of Ultraviolet-Absorbing Substance Extracted from Red Alga : Porphyra yezoensis and its Photothermal Spectroscopy
Density of Ar Metastable Atoms on the Discharge Tube Wall Measured by Evanescent Laser Spectroscopy
Electron Swarm Parameters Measured Using Photoelectrons Induced by a Pulse Laser
Direct Writing of Silicon Lines by Pyrolytic Argon Laser CVD
The Depth Profiling of the Crystal Quality in Laser-Annealed Polycrystalline Si Films by Raman Microprobe
Raman Image Measurements of Laser-Recrystallized Polycrystalline Si Films by a Scanning Raman Microprobe
High-Power,790 nm,Eight-Beam AlGaAs Laser Array with a Monitoring Photodiode : Visible Lasers
High-Power, 790 nm, Eight-Beam AlGaAs Laser Array with a Monitoring Photodiode
CW Operation and Extremely Low Capacitance of TJ-BH MQW Laser Diodes Fabricated by Entire MOVPE : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
Pressure Dependence of Band Discontinuity in GaAs/AlInP Quantum Well Structures
Leakage Mechanism of Local Junctions Forming the Main or Tail Mode of Retention Characteristics for Dynamic Random Access Memories
Thermal Cracking Effects of CeCl_3 Dopant on Blue Electroluminescent Properties in SrGa_2S_4:Ce Thin Films
An X-Ray Photoelectron Spectroscopy Study of Elements' Chemical States in SrGa_2S_4Ce Blue Electroluminescent Thin Films
Red Electroluminescence of Mn-doped CuAlS_2 Powder and Single Crystal
Ce-Activated SrS Thin Film Electroluminescent Devices Fabricated by Multi Source Deposition Using Ga_2S_3 Precursor
Dependence on Ce Concentration of Blue Emission and Crystallographic Properties in SrGa_2S_4:Electroluminescent Thin Films Grown by Molecular Beam Epitaxy
Structural and Electrical Properties for Fluorine-Doped Silicon Oxide Films Prepared by Biased Helicon-Plasma Chemical Vapor Deposition
Structural and Electrical Properties for Fluorine-Doped Silicon Oxide Films Prepared by Biased Helicon-Plasma CVD
Characterization of Stable Fluorine-Doped Silicon Oxide Film Prepared by Biased Helicon Plasma Chemical Vapor Deposition
Improving the Light Out-Coupling Properties of Inorganic Thin-Film Electroluminescent Devices
Simple Measurement of Quantum Efficiency in Organic Electroluminescent Devices : Instrumentation, Measurement, and Fabrication Technology
Vacuum Ultraviolet Laser-Induced Surface Alteration of SiO_2 : Beam Induced Physics and Chemistry
Vacuum Ultraviolet Laser-Induced Surface Alteration of SiO_2
Blue Electroluminescent SrGa_2S_4:Ce Thin Films Grown by Molecular Beam Epitaxy

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