Teramoto Akinobu | Department Of Electronic Engineering Faculty Of Engineering Tohoku University

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著作論文

High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance(Session 9B : Nano-Scale devices and Physics)
Saturation Phenomenon of Stress-Induced Gate Leakage Current
Impact of fully depleted silicon-on-insulator accumulation-mode CMOS on Si(110) (シリコン材料・デバイス)
Highly Reliable SiO_2 Films Formed by UV-O_2 Oxidation
Highly Reliable SiO_2 Films Formed by UV-O_2 Oxidation
The data analysis technique of the atomic force microscopy for the atomically flat silicon surface(Session9A: Silicon Devices IV)
The data analysis technique of the atomic force microscopy for the atomically flat silicon surface(Session9A: Silicon Devices IV)
Performance Comparison of Ultra-thin FD-SOI Inversion-, Intrinsic- and Accumulation-Mode MOSFETs
Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
A Technology for Reducing Flicker Noise for ULSI Applications
High-Quality Silicon Oxide Film Formed by Diffusion Region Plasma Enhanced Chemical Vapor Deposition and Oxygen Radical Treatment Using Microwave-Excited High-Density Plasma
Preoxide-Controlled Oxidation for Very Thin Oxide Films
Native Oxide Growth on Silicon Surface in Ultrapure Water and Hydrogen Peroxide
Nitrogen Profile Study for SiON Gate Dielectrics of Advanced DRAM
High performance 0.2μm Dual Gate Complementary MOS Technologies by Suppression of Transient-Enhanced-Diffusion using Rapid Thermal Annealing
Data Analysis Technique of Atomic Force Microscopy for Atomically Flat Silicon Surfaces
Low Contact Resistance with Low Schottky Barrier for N-type Silicon Using Yttrium Silicide
A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies
A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies
A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation(Session2: Silicon Devices I)
A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation(Session2: Silicon Devices I)
The Evaluation of New Amorphous Hydrocarbon Film aCHx, for Copper Barrier Dielectric Film in Low-k Copper Metallization
Low Dielectric Constant Non-Porous Fluorocarbon Films for Inter-Layer Dielectric
Simulation of Dopant Redistribution During Gate Oxidation Including Transient-Enhanced Diffusion Caused by Implantation Damage
Characterization of Zinc Oxide Films Grown by a Newly Developed Plasma Enhanced MOCVD Employing Microwave Excited High Density Plasma
Characterization of Extrinsic Oxide Breakdown on Thin Dielectric Oxide (Special Issue on Microelectronic Test Structures)
Suppression of the low frequency noise level in (100) and (110) oriented silicon p-MOSFETs induced by an alkali-free cleaning process
Effect of Silicon Wafer In Situ Cleaning on the Chemical Structure of Ultrathin Silicon Oxide Film
Technology of Ferroelectric Thin Film Formation with Large Coercive Field for Future Scaling Down of Ferroelectric Gate FET Memory Device
A New Statistical Evaluation Method for the Variation of MOSFETs
Low Leakage Current and Low Resistivity p^+n Diodes on Si(110) Fabricated by Ga^+/B^+ Combination I/I and Low Temperature Annealing

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