Kawazu S | Department Of Electronics And Photonic Systems Engineering Kochi University Of Technology

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著作論文

Simulation of Dopant Redistribution During Gate Oxidation Including Transient-Enhanced Diffusion Caused by Implantation Damage
3-D Topography and Impurity Integrated Process Simulator (3-D MIPS) and Its Applications (Special Issue on TCAD for Semiconductor Industries)
Effect of Ultrathin Top Silicon Layers on the X-Ray Photoelectron Emission from the Buried Oxide in Silicon-on-Insulator Wafers
Accurate Thickness Determination of Both Thin SiO_2 on Si and Thin Si on SiO_2 by Angle-Resolved X-Ray Photoelectron Spectroscopy
Elimination of X-Ray Photoelectron Diffraction Effect of Si(100) for Accurate Determination of SiO_2 Overlayer Thickness
Kikuchi-Band Analysis of X-Ray Photoelectron Diffraction Fine Structure of Si(100) by Precise Angle-Resolved X-Ray Photoelectron Spectroscopy
Stable Solution Method for Viscoelastic Oxidation Including Stress-Dependent Viscosity

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