Stable Solution Method for Viscoelastic Oxidation Including Stress-Dependent Viscosity

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概要

• 論文の詳細を見る

• A new computer program that simulates viscoelastic oxidation of silicon has been developed. Since in this program a tangential procedure is used for time stepping, numerical stability has been improved, and the instability problem that arises from the incorporation of stress dependence into oxide viscosity has been resolved. Thus, oxidation-induced stresses calculated by our program using stress-dependent viscosity have reasonable magnitude over the entire device area. Moreover, in our program, volume expansion due to oxidation of silicon was treated as a dilational strain, as opposed to its treatment as a forced displacement of oxide/silicon interface or a urniaxial strain perpendicular to the interface in most previous programs. Due to this difference, our program can simulate the generation of intrinsic stress below viscous flow temperature (ca. 960℃), and as a result, stress distribution calculated by our program changes drastically at the viscous flow temperature.

• 社団法人応用物理学会の論文
• 1996-08-15

著者

• MIYOSHI Hirokazu

  ULSI Laboratory, Mitsubishi Electric Corporation

• KOTANI Norihiko

  ULSI Laboratory, Mitsubishi Electric Corporation

• KAWAZU Satoru

  Ryoden Semiconductor System Engineering Corporation

• UCHIDA Tetsuya

  ULSI Laboratory, Mitsubishi Electric Corporation

• Miyoshi Hirokazu

  Ulsi Laboratory Mitsubishi Electric Corporation

• FUJINAGA Masato

  ULSI Research and Development Center, Mitsubishi Electric Corporation

• KAWAZU Satoru

  Department of Electronics and Photonic Systems Engineering, Kochi University of Technology

• Kawazu S

  Department Of Electronics And Photonic Systems Engineering Kochi University Of Technology

• Fujinaga Masato

  Ulsi Research And Development Center Mitsubishi Electric Corporation

• Uchida T

  Department Of Molecular Biotechnology Graduate School Of Advanced Sciences Of Matter Hiroshima Unive

• Kotani N

  Ulsi Research And Development Center Mitsubishi Electric Corporation

• Uchida T

  Semiconductor Leading Edge Technol. Inc. Yokohama Jpn

• Uchida Tetsuya

  Ulsi Development Center Mitsubishi Electric Corporation

• Kotani Norihiko

  Ulsi Laboratory Mitsubishi Electric Corporation

• Kotani Norihiko

  ULSI Development Center, Mitsubishi Electric Corporation

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