Substrate Engineering for Reduction of Alpha-Particle-Induced Charge Collection Efficiency
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概要
- 論文の詳細を見る
- 1996-02-01
著者
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INUISHI Masahide
ULSI Laboratory, Mitsubishi Electric Corporation
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MIYOSHI Hirokazu
ULSI Laboratory, Mitsubishi Electric Corporation
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KUROI Takashi
ULSI Development Center, Mitsubishi Electric Corporation
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Yamashita Tomohiro
Ulsi Development Center Mitsubishi Electric Corporation
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Kuroi T
Ulsi Development Center Mitsubishi Electric Corporation
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Komori Shigeki
Ulsi Laboratory Mitsubishi Electric Corporation
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- Simulation of Dopant Redistribution During Gate Oxidation Including Transient-Enhanced Diffusion Caused by Implantation Damage
- Clarification of Nitridation Effect on Oxide Formation Methods
- Development of 3D Focused-Ion-Beam (FIB) Etching Methods for Fabricating Micro- and Nanodevices
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- Reliability of Source-to-Drain Non-Uniformly Doped Channel (NUDC)MOSFETs for Sub-Quarter-Micron Region
- Substrate Engineering for Reduction of Alpha-Particle-Induced Charge Collection Efficiency
- Impact of Nitrogen Implantation on Highly Reliable Sub-Quarter-Micron Metal Oxide Field-Effect Transistors (MOSFETs) with Lightly Doped Drain Structure
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- Substrate Engineering for Reduction of Alpha-Particle-Induced Charge Collection Efficiency