Kuroi T | Ulsi Development Center Mitsubishi Electric Corporation

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概要

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著作論文

Saturation Phenomenon of Stress-Induced Gate Leakage Current
High performance 0.2μm Dual Gate Complementary MOS Technologies by Suppression of Transient-Enhanced-Diffusion using Rapid Thermal Annealing
Clarification of Nitridation Effect on Oxide Formation Methods
Proximity Gettering of Heavy Metals by High-Energy Ion Implantation
Bipolar Transistor with a Buried Layer Formed by High-Energy Ion Implantation for Subhalf-Micron Bipolar-Complementary Metal Oxide Semiconductor LSIs
Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45nm Node Devices and Beyond
Advanced Retrograde Well Technology for 90-nm-Node Embedded Static Random Access Memory Using High-Energy Parallel Beam
The Effects on Metal Oxide Semiconductor Field Effect Transistor Properties of Nitrogen Implantation into p^+ Polysilicon Gate
Reliability of Source-to-Drain Non-Uniformly Doped Channel (NUDC)MOSFETs for Sub-Quarter-Micron Region
Substrate Engineering for Reduction of Alpha-Particle-Induced Charge Collection Efficiency
Impact of Nitrogen Implantation on Highly Reliable Sub-Quarter-Micron Metal Oxide Field-Effect Transistors (MOSFETs) with Lightly Doped Drain Structure
The Impact of Nitrogen Implantation into Highty Doped Polysilicon Gates for flighty Reliable and High-Performance Sob-Quarter-Micron Dual-Gate Complementary Metal Oxide Semiconductor

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