The Impact of Nitrogen Implantation into Highty Doped Polysilicon Gates for flighty Reliable and High-Performance Sob-Quarter-Micron Dual-Gate Complementary Metal Oxide Semiconductor
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-02-28
著者
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INUISHI Masahide
ULSI Laboratory, Mitsubishi Electric Corporation
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TSUBOUCHI Natsuro
ULSI Laboratory, Mitsubishi Electric Corporation
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INUISHI Masahide
Advanced Device Development Dept., Renesas Technology Corp.
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KUROI Takashi
ULSI Development Center, Mitsubishi Electric Corporation
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SHIRAHATA Masayoshi
ULSI Development Center, Mitsubishi Electric Corporation
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Okumura Yoshihiro
Research Institute Of Electronics Shizuoka University
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Tsubouchi Natsuro
Lsi Research And Development Laboratory Mitusbishi Electric Corporation
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Tsubouchi Natsuro
Ulsi Development Center Mitsubishi Electric Corporation
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Kuroi T
Ulsi Development Center Mitsubishi Electric Corporation
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Kuroi Takashi
Ulsi Development Center Mitsubishi Electric Corporation
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Kusunoki Shigeru
ULSI Laboratory, Mitsubishi Electric Corporation
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Okumura Y
Minolta Co. Ltd. Osaka Jpn
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Tsubouchi N
Ulsi Dev. Center Hyogo Jpn
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Kobayashi Maiko
ULSI Laboratory, Mitsubishi Electric Corporation
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Okumura Yoshiki
ULSI Laboratory, Mitsubishi Electric Corporation
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Kobayashi Maiko
Ulsi Laboratory Mitsubishi Electric Corporation
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Inuishi Masahide
Advanced Device Development Dept. Renesas Technology Corp.
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Inuishi Masahide
Ulsi Development Center Mitsubishi Electric Corporation
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Kusunoki S
Ulsi Laboratory Mitsubishi Electric Corporation
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Shirahata M
Ulsi Laboratory Mitsubishi Electric Corporation
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Shirahata Masayoshi
Ulsi Development Center Mitsubishi Electric Corporation
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