Saturation Phenomenon of Stress-Induced Gate Leakage Current

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-04-30

著者

• EIMORI Takahisa

  ULSI Development Center, Mitsubishi Electric Corporation

• INOUE Yasuo

  ULSI Development Center, Mitsubishi Electric Corporation

• Inoue Yasuo

  Lsi Research & Development Laboratory Mitsubishi Electric Corporation

• Inoue Y

  National Defense Acad. Yokosuka Jpn

• Umeda Hiroshi

  Ulsi Development Center Mitsubishi Electric Corporation

• UENO Shuichi

  ULSI Development Center, Mitsubishi Electric Corporation

• KUROI Takashi

  ULSI Development Center, Mitsubishi Electric Corporation

• TERAMOTO Akinobu

  ULSI Development Center, Mitsubishi Electric Corporation

• Eimori Takahisa

  Ulsi Development Center Mitsubishi Electric Corporation

• Teramoto Akinobu

  Ulsi Development Center Mitsubishi Electric Corporation

• Teramoto Akinobu

  Ulsi Laboratory Mitsubishi Electric Corporation

• Teramoto Akinobu

  Department Of Electronic Engineering Faculty Of Engineering Tohoku University

• IZUMI Yoshitaka

  NHK Science and Technical Research Laboratories

• Inoue Y

  Ntt Access Network Service Systems Laboratories Ntt Corporation

• Kuroi T

  Ulsi Development Center Mitsubishi Electric Corporation

• Kuroi Takashi

  Ulsi Development Center Mitsubishi Electric Corporation

• Iwai Yuki

  Dep. Of Electronics And Bioinformatics Sci. And Technol. Meiji Univ.

• Inoue Yasuo

  Ulsi Development Center Mitsubishi Electric Corporation

• Ueno Shuichi

  Ulsi Development Center Mitsubishi Electric Corporation

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