Clarification of Nitridation Effect on Oxide Formation Methods

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概要

• 論文の詳細を見る

• The electrical characteristics of gate dielectrics have been intensively studied. We examined four types of gate dielectrics: thermal oxide films formed in a pyrogenic steam ambient, those in a dry oxygen ambient, chemical vapor deposition (CVD) oxide films, and the thermal/CVD stacked oxide films. The effects of nitridation on oxide properties have been also systematically investigated using the nitrogen implantation technique. It is found that hot-carrier degradation can be improved by nitridation irrespective of the oxidation methods. This improvement is attributed to the suppression of interface state generation and the reduction in the number of electron traps in the oxide films. Our extensive investigation concludes that the nitridation of gate oxide films by nitrogen implantation is very promising for the improvement in reliability in spite of the difference in oxide formation methods.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1996-02-28

著者

• Teramoto Akinobu

  Ulsi Development Center Mitsubishi Electric Corporation

• Miyoshi Hirokazu

  Ulsi Laboratory Mitsubishi Electric Corporation

• OKUMURA Yoshinori

  ULSI Laboratory, Mitsubishi Electric Corporation

• ANMA Masatoshi

  ULSI Laboratory, Mitsubishi Electric Corporation

• Kuroi Takashi

  Ulsi Development Center Mitsubishi Electric Corporation

• Inuishi Masahide

  Ulsi Development Center Mitsubishi Electric Corporation

• Shirahata Masayoshi

  Ulsi Development Center Mitsubishi Electric Corporation

• Shimizu Satoshi

  Ulsi Laboratory Mitsubishi Electric Corporation

• Teramoto Akinobu

  ULSI Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664, Japan

• Anma Masatoshi

  ULSI Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664, Japan

• Shirahata Masayoshi

  ULSI Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664, Japan

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