Characterization of Extrinsic Oxide Breakdown on Thin Dielectric Oxide (Special Issue on Microelectronic Test Structures)

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概要

• 論文の詳細を見る

• A new method using new test structure, which is connected 15.4 million MOS transistor, for evaluating extrinsic oxide breakdown is proposed. The active gate area which is needed to predict reliability will be shown. And by using this new method, activation energy not only for the intrinsic breakdown but also for the extrinsic breakdown are obtained.

• 社団法人電子情報通信学会の論文
• 1999-04-25

著者

• TERAMOTO Akinobu

  ULSI Development Center, Mitsubishi Electric Corporation

• TERAMOTO Akinobu

  Mitsubishi Electric Corporation, ULSI Laboratory

• Teramoto Akinobu

  Ulsi Development Center Mitsubishi Electric Corporation

• Teramoto Akinobu

  Ulsi Laboratory Mitsubishi Electric Corporation

• Teramoto Akinobu

  Department Of Electronic Engineering Faculty Of Engineering Tohoku University

• Teramoto Akinobu

  Mitsubishi Electric Corporation Ulsi Development Center Evaluation & Analysis Department

• Mashiko Yoji

  Mitsubishi Electric Corporation Ulsi Development Center Evaluation & Analysis Department

• SHIGA Katsuya

  Mitsubishi Electric Corporation, ULSI Development Center, Evaluation & Analysis Department

• KOMORI Junko

  Mitsubishi Electric Corporation, ULSI Development Center, Evaluation & Analysis Department

• KATSUMATA Masafumi

  Mitsubishi Electric Corporation, ULSI Development Center, Evaluation & Analysis Department

• Shiga Katsuya

  Mitsubishi Electric Corporation Ulsi Development Center Evaluation & Analysis Department

• Komori Junko

  Mitsubishi Electric Corporation Ulsi Development Center Evaluation & Analysis Department

• Katsumata Masafumi

  Mitsubishi Electric Corporation Ulsi Development Center Evaluation & Analysis Department

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