Effect of Silicon Wafer In Situ Cleaning on the Chemical Structure of Ultrathin Silicon Oxide Film

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概要

• 論文の詳細を見る

• The effect of silicon wafer in situ cleaning on the chemical structures of thermally grown silicon oxide films was studied by X-ray photoelectron spectroscopy and scanning tunneling microscopy. After the silicon wafer in situ cleaning was performed by the decomposition of native oxides in high vacuum, the nearly 1.6-nm-thick thermal oxides were formed in dry oxygen at 800℃. If the heating time for the decomposition of native oxides was too short, intermediate states transformed from native oxides were found to remain on the surface of the oxide films. On the other hand, if the heating time was too long, the amount of intermediate states at the interface was found to increase as a result of the increase in interface roughness. The optimum condition for in situ cleaning is heating at 900℃ for 30 minutes in high vacuum.

• 社団法人応用物理学会の論文
• 1991-12-30

著者

• MORITA Mizuho

  Department of Precision Science and Technology, Graduate School of Engineering, Osaka University

• OGAWA Hiroki

  Department of Surgery, Otsu Red Cross Hospital

• Ohmi Tadahiro

  Department Of Electronic Engineering Graduate School Of Engineering Tohoku University

• Morita M

  Department Of Electronics Tohoku University

• Morita Mizuho

  Department Of Electronic Engineering Faculty Of Engineering Tohoku University

• Hattori Takeo

  Department of Electrical and Electronic Engineering, Musashi Institute of Technology

• Hattori Tetsuya

  Depaetment Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• Morita M

  Advanced Materials & Technology Research Laboratories Nippon Steel Corporation

• MORIKI Kazunori

  Department of Electrical and Electronic Engineering, Musashi Institute of Technology

• MAKIHARA Koji

  Department of Electronic Engineering, Faculty of Engineering, Tohoku University

• TERAMOTO Akinobu

  Department of Electronic Engineering, Faculty of Engineering, Tohoku University

• Hattori Takashi

  Central Research Laboratory Hitachi Ltd.

• Teramoto Akinobu

  Department Of Electronic Engineering Faculty Of Engineering Tohoku University

• Ogawa Hiroki

  Department Of Material Science School Of Engineering University Of Tokyo

• Ohmi Tadahiro

  Department Of Electronic Engineering

• Makihara K

  Department Of Electronics Tohoku University

• Makihara Koji

  Department Of Applied Chemistry Graduate School Of Engineering Kyushu University

• Hattori Takeo

  Department Of Electrical & Electronic Engineering Musashi Institute Of Technology

• Moriki Kazunori

  Department Of Electrical And Electronic Engineering Musashi Institute Of Technology

• TERADA Naozumi

  Department of Electrical and Electronic Engineering, Musashi Institute of Technology

• Terada Naozumi

  Department Of Electrical And Electronic Engineering Musashi Institute Of Technology

• Ogawa Hiroki

  Department Of Electrical And Electronic Engineering Musashi Institute Of Technology

• Ogawa Hiroki

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology:(present Address) N

• Hattori Takeo

  Faculty Of Engineering Musashi Institute Of Technology

• Teramoto Akinobu

  Department Of Electronics Tohoku University

• Teramoto Akinobu

  University Of Tohoku New Industry Creation Hatchery Center (niche)

• Ogawa Hiroki

  Department of Chemistry, School of Science and Engineering, Waseda University

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