Characterization and Control of Native Oxide on Silicon
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-01-30
著者
-
MORITA Mizuho
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
-
Ohmi Tadahiro
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
-
Ohmi Tadahiro
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
-
Morita M
Department Of Information Science Graduate School Of Information Sciences Tohoku University:laborato
-
Morita Mizuho
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
-
Ohmi Tadahiro
Department Of Electronic Engineering
関連論文
- Surface Hall Potentiometry to Characterize Functional Semiconductor Films
- Visible Light Irradiation Effects on STM Observations of Hydrogenated Amorphous Silicon Surfaces
- Genome-wide microsatellite analysis of focal nodular hyperplasia : a strong tool for the differential diagnosis of non-neoplastic liver nodule from hepatocellular carcinoma
- Minimization of BF^+_2-Implantation Dose to Reduce the Annealing Time for Ultra-Shallow Source/Drain Junction Formation below 600℃
- Reduction of BF2+-Implantation Dose to Minimize the Annealing Time for Ultra-Shallow Source/Drain Junction Formation below 600℃
- A Comparative Examination of Ion Implanted n^+p Junctions Annealed at 1000℃ and 450℃
- Formation of Ultra-Shallow and Low-Leakage p^+n Junctions by Low-Temperature Post-Implantation Annealing
- Effect of Substrate Boron Concentration on the Integrity of 450℃-Annealed Ion-Implanted Junctions
- Reducing Reverse-Bias Current in 450℃-Annealed n^+p Junction by Hydrogern Radical Sintering
- Neuron MOS Analog/Digital Merged Circuit Technology For Center-Of-Mass Tracker Circuit
- Ultra-Low-Temperature Formation of Si Nitride Film by Direct Nitridation Employing High-Density and Low-Energy Ion Bombardment
- Silicon Wafer Orientation Dependence of Metal Oxide Sermiconductor Device Reliability
- Ultra Low-Temperature Growth of High-Integrity Thin Gate Oxide Films by Low-Energy Ion-Assisted Oxidation
- Preoxide-Controlled Oxidation for Very Thin Oxide Films
- Native Oxide Growth on Silicon Surface in Ultrapure Water and Hydrogen Peroxide
- Dopant-Free Channel Transistor with Punchthrough Control Region under Source and Drain
- Formation of Ultra-Shallow and Low-Reverse-Bias-Current Tantalum-Silicided Junctions Using a Si-Eneapsulated Silicidation Technique and Low-Temperature Furnace Annealing below 550℃
- Formation of Ultra-Shallow, Low-Leakage and Low-Contact-Resistance Junctions by Low-Temperature Si-Encapsulated Silicidation Process
- Design of Radial Line Slot Antennas at 8.3 GHz for Large Area Uniform Plasma Generation
- Abrupt and Arbitrary Profile Formation in Silicon Using a Low-Kinetic-Energy Ion Bombardment Process
- Impact of High-Precision RF-Plasma Control on Very-Low-Temperature Silicon Epitaxy
- Improvement of Rinsing Efficiency after Sulfuric Acid Hydrogen Peroxide Mixture (H_2SO_4/H_2O_2) by HF Addition
- Characterization and Control of Native Oxide on Silicon
- Metal-Insulator-Gap-Insulator-Semiconductor Structure for Sensing Devices
- Scanning Surface Hall Potentiometry on Semiconductor Wafers
- Steep On-Off Ratio of Photocurrent through Metal-Oxide-Semiconductor Tunneling Structures
- Characterization of Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Microscopy
- Liquid Sensing by Nano-Gap Device with Treated Surface
- Photodetective Characteristics of Metal-Oxide-Semiconductor Tunneling Structure with Aluminum Grid Gate
- Characterization of Void in Bonded SOI Wafers by Controlling Coherence Length of Near-Infrared Microscope
- Development of Nanao-Gap Device for Biosensor
- Photodetector Characteristics of Metal-Oxide-Semiconductor Tunneling Structures with Transparent Conductive Tin Oxide Gate
- Nano-Gap Device for Liquid Sensing
- Low Power Neuron-MOS Technology for High-Functionality Logic Gate Synthesis (Special Issue on New Concept Device and Novel Architecture LSIs)
- A Model for the Electrochemical Deposition and Removal of Metallic Impurities on Si Surfaces (Special Issue on Scientific ULSI Manufacturing Technology)
- Flexible Processor Based on Full-Adder/D-Flip-Flop Merged Module (FDMM)
- Enhancement of Silicon Epitaxy by Increased Phosphorus Concentration in a Low-Energy Ion Bombardment Process
- Minimizing Wafer Surface Damage and Chamber Material Contamination in New Plasma Processing Equipment
- Planar-Type Gunn Diode of InP
- Development of Scanning μ-RHEED Microscopy for Imaging Polycrystal Grain Structure in LSI (SOLID STATE DEVICES AND MATERIALS 1)
- Very-Low-Temperature Epitaxial Silicon Growth By Low-Kinetic-Energy Particle Bombardment : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)
- Hot-Carrier-Immunity Degradation in Metal Oxide Semiconductor Field Effect Transistors Caused by Ion-Bombardment Processes
- Effect of Preoxide on the Structure of Thernmal Oxide
- FTIR-ATR Evaluation of Organic Contaminant Cleaning Methods for SiO_2 Surfaces
- Native Oxide Growing Behavior on Si Crystal Structure and Resistivity
- The Nature of Metallic Contamination on Various Silicon Substrates
- In Situ Observation of Electromigration in Cu Film Using Scanning μ-Reflection High-Energy Electron Diffraction Microscope
- In Situ Chamber Cleaning Using Halogenated-Gas Plasmas Evaluated by Plasma-Parameter Extraction
- Modeling and Analysis of RF Plasma Using Electrical Equivalent Circuit
- Effect of Silicon Wafer In Situ Cleaning on the Chemical Structure of Ultrathin Silicon Oxide Film
- Reaction of Hydrogen-Terminated Si(100) Surfaces with Oxygen at Very Low Pressures during Heating
- Reaction of Hydrogen-Desorbed Si(100) Surfaces with Water during Heating and Cooling
- Tunneling Current through Ultrathin Silicon Dioxide Films under Light Exposure
- Formation Process of Highly Reliable Ultra-Thin Gate Oxide
- Dielectric Relaxation Effect of Traveling Carriers in the Semiconductors
- Gas Chemistry Dependence of Si Surface Reactions in a Fluorocarbon Plasma during Contact Hole Etching
- Dependence of Gas Chemistry on Si Surface Reactions in High C/F Ratio Fluorocarbon Plasma during Contact Hole Etching
- Trends for Future Silicon Technology
- Characterization of Void in Bonded Silicon-on-Insulator Wafers by Controlling Coherence Length of Light Source using Near-Infrared Microscope
- Time-Dependent Dielectric Degradation (TDDD) Influenced by Ultrathin Oxidation Process
- Malignant Fibrous Histiocytoma Arising from the Renal Capsule
- Neuron-MOS Parallel Search Hardware for Real-Time Signal Processing
- High-Reliability Lithography Performed by Ultrasonic and Surfactant-Added Developing System
- High-Sensitivity and High-Resolution Contact Hole Patterning by Enhanced-Wettability Developer
- Metallic Impurity Growing Behavior on Surface Crystal Structure
- Choroid Plexus Metastasis of Colon Cancer
- Study on an Angular Momentum Conservation of Radiation in a Uniaxial Crystal
- Static Negative Resistance in Highly Doped Gunn Diodes and Application to Switching and Amplification
- Superior Generalization Capability of Hardware-Learing Algorithm Developed for Self-Learning Neuron-MOS Neural Networks
- Functionality Enhancement in Elemental Devices for Implementing Intelligence on Integrated Circuits (Special Issue on New Concept Device and Novel Architecture LSIs)
- Specialty Gas Interactions with Various Silicon Surfaces
- Selective Tungsten Chemical Vapor Deposition with High Deposition Rate for ULSI Application
- Characterization of Tunneling Current through Ultrathin Silicon Dioxide Films by Different-Metal Gates Method
- Four-Terminal Device Electronics for Intelligent Silicon Integrated Systems
- Strategy in Cleaning Processes for Future Materials
- Contamination-Free Physical Resist Stripping by Megasonic/IPA/Fluoride Enhanced Life-off Processing
- Enhancement of Silicon Epitaxy by Increased Phosphorus Concentration in a Low-Energy Ion Bombardment Process
- Tunneling Current through Ultrathin Silicon Dioxide Films under Light Exposure
- Development of Surface Hall Potentiometry to Reveal the Variation of Drift Velocity of Carriers in Semiconductor Materials
- Surface Hall Potentiometry for Characterizing Semiconductor Films
- Visible Light Irradiation Effects on STM Observations of Hydrogenated Amorphous Silicon Surfaces
- Absolute Line Profile Measurements of Silicon Plane Mirrors by Near-Infrared Interferometry
- Characterization of Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Microscopy
- Photodetective Characteristics of Metal–Oxide–Semiconductor Tunneling Structure with Aluminum Grid Gate
- Formation of Ultra-Shallow and Low-Reverse-Bias-Current Tantalum-Silicided Junctions Using a Si-Encapsulated Silicidation Technique and Low-Temperature Furnace Annealing below 550°C
- Improvement of Rinsing Efficiency after Sulfuric Acid Hydrogen Peroxide Mixture ( H2SO4/H2O2) by HF Addition
- Reaction of Hydrogen-Desorbed Si(100) Surfaces with Water during Heating and Cooling
- Time-Dependent Dielectric Degradation (TDDD) Influenced by Ultrathin Film Oxidation Process