In Situ Chamber Cleaning Using Halogenated-Gas Plasmas Evaluated by Plasma-Parameter Extraction
スポンサーリンク
概要
- 論文の詳細を見る
We have demonstrated that high-efficiency in situ chamber cleaning with high gas flow rate is possible for SiO_2 reactive-ion-etching chambers by use of NF_3 plasma. The plasma of NF_3 gas, which has a low bond energy, can generate a high density of ions and radicals with low kinetic energy. The cleaning efficiency of several halogenated-gas plasmas has been evaluated based on extracted-plasma-parameter analysis. In this analysis important plasma parameters, such as ion energy and ion flux density, could be extracted from a simple rf waveform analysis at the excitation electrode. The accuracy of this technique has been confirmed with a newly developed rf-plasma direct probing method. Furthermore, the waveform of the rf-excited plasma potential has been directly measured by the rf-plasma probing method, which has clarified the relationship between the plasma potential and the rf electrode voltage.
- 社団法人応用物理学会の論文
- 1994-01-30
著者
-
Ohmi Tadahiro
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
-
ICHIKAWA Akihiro
Departments of Nuclear Medicine, Gunma University School of Medicine
-
Ichikawa Akihiro
Department Of Electronic Engineering Tohoku University:laboratory For Microelectrontics Research Ins
-
INO Kazuhide
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
-
Ohmi Tadahiro
Department Of Electronic Engineering
-
Ohmi Tadahiro
Department Of Electronic Engineering Tohoku University:laboratory For Microelectrontics Research Ins
-
Ino Kazuhide
Department Of Electronic Engineering Tohoku University:laboratory For Microelectrontics Research Ins
-
Ino Kazuhide
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
-
NATORI Iwao
Department of Electronic Engineering, Tohoku University
-
Natori Iwao
Department Of Electronic Engineering Tohoku University:laboratory For Microelectrontics Research Ins
関連論文
- Minimization of BF^+_2-Implantation Dose to Reduce the Annealing Time for Ultra-Shallow Source/Drain Junction Formation below 600℃
- Reduction of BF2+-Implantation Dose to Minimize the Annealing Time for Ultra-Shallow Source/Drain Junction Formation below 600℃
- A Comparative Examination of Ion Implanted n^+p Junctions Annealed at 1000℃ and 450℃
- Formation of Ultra-Shallow and Low-Leakage p^+n Junctions by Low-Temperature Post-Implantation Annealing
- Effect of Substrate Boron Concentration on the Integrity of 450℃-Annealed Ion-Implanted Junctions
- Reducing Reverse-Bias Current in 450℃-Annealed n^+p Junction by Hydrogern Radical Sintering
- Neuron MOS Analog/Digital Merged Circuit Technology For Center-Of-Mass Tracker Circuit
- Intense Ga-67 uptake in adenosquamous carcinoma of the pancreas
- Ultra-Low-Temperature Formation of Si Nitride Film by Direct Nitridation Employing High-Density and Low-Energy Ion Bombardment
- Usefulness of dual-head coincidence gamma camera with thick NaI crystals for nuclear oncology : Comparison with dedicated PET camera and conventional gamma camera with thin NaI crystals
- Fundamental study of hot detectability in 3-dimensional positron emission tomography
- Silicon Wafer Orientation Dependence of Metal Oxide Sermiconductor Device Reliability
- Asymmetries of benzodiazepine receptor binding potential in the inferior medial temporal lobe and cerebellum detected with ^I-iomazenil SPECT in comparison with ^Tc-HMPAO SPECT in patients with partial epilepsy
- Ultra Low-Temperature Growth of High-Integrity Thin Gate Oxide Films by Low-Energy Ion-Assisted Oxidation
- Preoxide-Controlled Oxidation for Very Thin Oxide Films
- Native Oxide Growth on Silicon Surface in Ultrapure Water and Hydrogen Peroxide
- Dopant-Free Channel Transistor with Punchthrough Control Region under Source and Drain
- Formation of Ultra-Shallow and Low-Reverse-Bias-Current Tantalum-Silicided Junctions Using a Si-Eneapsulated Silicidation Technique and Low-Temperature Furnace Annealing below 550℃
- Formation of Ultra-Shallow, Low-Leakage and Low-Contact-Resistance Junctions by Low-Temperature Si-Encapsulated Silicidation Process
- Design of Radial Line Slot Antennas at 8.3 GHz for Large Area Uniform Plasma Generation
- Abrupt and Arbitrary Profile Formation in Silicon Using a Low-Kinetic-Energy Ion Bombardment Process
- Impact of High-Precision RF-Plasma Control on Very-Low-Temperature Silicon Epitaxy
- Improvement of Rinsing Efficiency after Sulfuric Acid Hydrogen Peroxide Mixture (H_2SO_4/H_2O_2) by HF Addition
- Characterization and Control of Native Oxide on Silicon
- Low Power Neuron-MOS Technology for High-Functionality Logic Gate Synthesis (Special Issue on New Concept Device and Novel Architecture LSIs)
- A Model for the Electrochemical Deposition and Removal of Metallic Impurities on Si Surfaces (Special Issue on Scientific ULSI Manufacturing Technology)
- Flexible Processor Based on Full-Adder/D-Flip-Flop Merged Module (FDMM)
- Enhancement of Silicon Epitaxy by Increased Phosphorus Concentration in a Low-Energy Ion Bombardment Process
- Minimizing Wafer Surface Damage and Chamber Material Contamination in New Plasma Processing Equipment
- Planar-Type Gunn Diode of InP
- Development of Scanning μ-RHEED Microscopy for Imaging Polycrystal Grain Structure in LSI (SOLID STATE DEVICES AND MATERIALS 1)
- Very-Low-Temperature Epitaxial Silicon Growth By Low-Kinetic-Energy Particle Bombardment : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)
- Hot-Carrier-Immunity Degradation in Metal Oxide Semiconductor Field Effect Transistors Caused by Ion-Bombardment Processes
- Effect of Preoxide on the Structure of Thernmal Oxide
- Native Oxide Growing Behavior on Si Crystal Structure and Resistivity
- The Nature of Metallic Contamination on Various Silicon Substrates
- In Situ Observation of Electromigration in Cu Film Using Scanning μ-Reflection High-Energy Electron Diffraction Microscope
- In Situ Chamber Cleaning Using Halogenated-Gas Plasmas Evaluated by Plasma-Parameter Extraction
- Modeling and Analysis of RF Plasma Using Electrical Equivalent Circuit
- Effect of Silicon Wafer In Situ Cleaning on the Chemical Structure of Ultrathin Silicon Oxide Film
- Formation Process of Highly Reliable Ultra-Thin Gate Oxide
- Dielectric Relaxation Effect of Traveling Carriers in the Semiconductors
- Gas Chemistry Dependence of Si Surface Reactions in a Fluorocarbon Plasma during Contact Hole Etching
- Dependence of Gas Chemistry on Si Surface Reactions in High C/F Ratio Fluorocarbon Plasma during Contact Hole Etching
- Trends for Future Silicon Technology
- Time-Dependent Dielectric Degradation (TDDD) Influenced by Ultrathin Oxidation Process
- Neuron-MOS Parallel Search Hardware for Real-Time Signal Processing
- High-Reliability Lithography Performed by Ultrasonic and Surfactant-Added Developing System
- High-Sensitivity and High-Resolution Contact Hole Patterning by Enhanced-Wettability Developer
- Metallic Impurity Growing Behavior on Surface Crystal Structure
- Study on an Angular Momentum Conservation of Radiation in a Uniaxial Crystal
- Static Negative Resistance in Highly Doped Gunn Diodes and Application to Switching and Amplification
- Superior Generalization Capability of Hardware-Learing Algorithm Developed for Self-Learning Neuron-MOS Neural Networks
- Functionality Enhancement in Elemental Devices for Implementing Intelligence on Integrated Circuits (Special Issue on New Concept Device and Novel Architecture LSIs)
- Specialty Gas Interactions with Various Silicon Surfaces
- Selective Tungsten Chemical Vapor Deposition with High Deposition Rate for ULSI Application
- Four-Terminal Device Electronics for Intelligent Silicon Integrated Systems
- Strategy in Cleaning Processes for Future Materials
- Contamination-Free Physical Resist Stripping by Megasonic/IPA/Fluoride Enhanced Life-off Processing
- Enhancement of Silicon Epitaxy by Increased Phosphorus Concentration in a Low-Energy Ion Bombardment Process
- Formation of Ultra-Shallow and Low-Reverse-Bias-Current Tantalum-Silicided Junctions Using a Si-Encapsulated Silicidation Technique and Low-Temperature Furnace Annealing below 550°C
- Improvement of Rinsing Efficiency after Sulfuric Acid Hydrogen Peroxide Mixture ( H2SO4/H2O2) by HF Addition
- Time-Dependent Dielectric Degradation (TDDD) Influenced by Ultrathin Film Oxidation Process