Formation of Ultra-Shallow and Low-Reverse-Bias-Current Tantalum-Silicided Junctions Using a Si-Encapsulated Silicidation Technique and Low-Temperature Furnace Annealing below 550°C
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概要
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Low-temperature processing, below 550°C, has been developed to form ultra-shallow, low-leakage, and low-contact-resistance junctions with tantalum silicide. We have experimentally demonstrated that the amount of residual defects after ion implantation and subsequent low-temperature annealing is strongly dependent on the substrate dopant concentration for both n+p and p+n junctions. It is also confirmed that ion implantation through Ta is not the main factor inducing larger leakage due to metal-knock-on. As a result, ultra-low leakage current (7.8×10-10 A/cm2 and 6.6×10-10 A/cm2 for n+p and p+n junctions at reverse-bias of 5 V) and ultra-shallow junction depth (70 nm and 40 nm for n+p and p+n junctions) have been achieved in Ta-silicided junctions at an annealing temperature of as low as ∼550°C, by employing an ultraclean ion implanter, Si-encapsulated silicidation, and low-dopant-concentration substrate.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1998-08-15
著者
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TANIGUCHI Yoshiyuki
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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Ohmi Tadahiro
Department Of Electronic Engineering
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Ino Kazuhide
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Ohmi Tadahiro
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 05 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Ino Kazuhide
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 05 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Taniguchi Yoshiyuki
Department of Chemistry, Kyushu University 33
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