Selective Tungsten Chemical Vapor Deposition with High Deposition Rate for ULSI Application
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概要
- 論文の詳細を見る
For the application of selective tungsten chemical vapor deposition (CVD) on ULSI device fabrication, two serious problems still remain: loss of selectivity and damage on devices. Selective tungsten deposition with the high rate of 1 μm/min has been achieved by a new CVD system having a cold susceptor, where the high selectivity has been well maintained continuously. We have also found that the tungsten-Si contacts with good performance of low contact resistance and no device damage can be formed by controlling the initial growth of tungsten.
- 社団法人応用物理学会の論文
- 1994-01-30
著者
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Morita Mizuho
Department Of Electronic Engineering Faculty Of Engineering Tohoku University:laboratory For Microel
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Morita Mizuho
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Ohmi Tadahiro
Department Of Electronic Engineering
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Morita Kenji
Department Of Nuclear Engineering Faculty Of Engineering Osaka University:(present Address) Departme
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Suzuki Hiroshi
Department Of Allergy And Immunology National Research Institute For Child Health & Development
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Maeda Yuuji
Department Of Electronic Engineering Faculty Of Engineering Tohoku University:laboratory For Microel
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Morita Kenji
Department Of Crystalline Material Science Graduate School Of Engineering Nagoya University
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Morita Kenji
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Morita Kenji
Department of Applied Bioscience and Biotechnology, Faculty of Life and Environmental Science, Shimane University
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