Reduction of BF2+-Implantation Dose to Minimize the Annealing Time for Ultra-Shallow Source/Drain Junction Formation below 600℃
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概要
- 論文の詳細を見る
- 1997-09-16
著者
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Nakada A
Vlsi Design And Education Center The University Of Tokyo
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Ohmi Tadahiro
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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KANEMOTO Kei
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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NAKADA Akira
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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Ohmi Tadahiro
Department Of Electronic Engineering
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Kanemoto Kei
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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