Ultrashallow and Low-Leakage p^+n Junction Formation by Plasma Immersion Ion Implantation (PIII) and Low-Temperature Post-Implantation Annealing
スポンサーリンク
概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-01
著者
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KANEMOTO Kei
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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AHARONI Herzl
New Industry Creation Hatchery Center, Tohoku University
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Aharoni Herzl
東北大学未来科学技術共同研究センター
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Ohmi T
Tohoku Univ. Sendai Jpn
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Kanemoto Kei
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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Aharoni Herzl
New Industry Creation Hatchery Center Tohoku University
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Ohmi Tadahiro
New Industry Creation Hatchery Center (niche) Tohoku University
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