The Effect of Organic Contaminations Molecular Weights in the Cleanroom Air on MOS Devices Degradation - a Controlled laminar Air Flow Experiment

スポンサーリンク

概要

• 論文の詳細を見る
• 2001-09-25

著者

• 大川 猛

  (独)産業技術総合研究所情報技術研究部門

• OHMI Tadahiro

  New Industry Creation Hatchery Center, Tohoku University

• 大川 猛

  東北大学大学院工学研究科

• 大川 猛

  National Institute For Advanced Industrial Science And Technology (aist):information Technology Rese

• Ohkawa Takeshi

  Department Of Electronic Engineering Tohoku University

• SUGAWA Shigetoshi

  Department of Electronic Engineering, Graduate School of Engineering, Tohoku University

• AHARONI Herzl

  New Industry Creation Hatchery Center, Tohoku University

• SUGAWA Sigetoshi

  Tohoku University

• Sugawa Shigetoshi

  Graduate School Of Engineering Tohoku University

• Sugawa Shigetoshi

  Department Of Electronic Engineering Tohoku University

• Ohmi Tadahiro

  New Industry Creation Hatchery Center Future Information Industry Creation Center Tohoku University

• Aharoni Herzl

  New Industry Creation Hatchery Center Tohoku University

• Kobayashi Sadao

  Taisei Corporation

• 大川 猛

  National Institute For Advanced Industrial Science And Technology (aist) Information Technology Rese

• WAKAYAMA Yoshihide

  Department of Electronic Engineering, Tohoku University

• 大川 猛

  (株)トプスシステムズ

• Wakayama Yoshihide

  Department Of Electronic Engineering Tohoku University

• Ohmi Tadahiro

  New Industry Creation Hatchery Center (niche) Tohoku University

• 大川 猛

  宇都宮大学大学院工学研究科情報システム科学専攻

関連論文

• CORBA/GIOPを用いたFPGA向けオブジェクト指向プログラミング・テスト環境(組込みシステムプラットフォーム)
• オブジェクト要求ブローカのハードウェア化によりオブジェクトレベル通信を加速する「ORBエンジン」の提案(オペレーティング・システム/コンパイラ)
• High current drivability FD-SOI CMOS with low Source/Drain series resistance (Silicon devices and materials)
• 極薄ゲート酸化膜の有機物汚染が与える影響
• CORBA/GIOPを用いたFPGA向けオブジェクト指向プログラミング・テスト環境(組込みシステムプラットフォーム)
• CORBA/GIOPを用いたFPGA向けオブジェクト指向プログラミング・テスト環境(組込みシステムプラットフォーム)
• High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance(Session 9B : Nano-Scale devices and Physics)
• High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance(Session 9B : Nano-Scale devices and Physics)
• 省エネ組込みヘテロジニアス・マルチチップ積層COOL Systemの開発
• オブジェクト要求ブローカのハードウェア化によりオブジェクトレベル通信を加速する「ORBエンジン」の提案(オペレーティング・システム/コンパイラ)
• Subvector-Based Fast Encoding Method for Vector Quantization Without Using Two Partial Variances
• Performance Comparison between Equal-Average Equal-Variance Equal-Norm Nearest Neighbor Search (EEENNS) Method and Improved Equal-Average Equal-Variance Nearest Neighbor Search (IEENNS) Method for Fast Encoding of Vector Quantization(Image Processing and
• Fast Encoding Method for Image Vector Quantization Based on Multiple Appropriate Features to Estimate Euclidean Distance
• A Fast Encoding Method for Vector Quantization Using Modified Memory-Efficient Sum Pyramid
• A Fast Search Method for Vector Quantization Using Enhanced Sum Pyramid Data Structure(Image)
• An Improved Fast Encoding Algorithm for Vector Quantization Using 2-Pixel-Merging Sum Pyramid and Manhattan-Distance-First Check(Image Processing, Image Pattern Recognition)
• A Fast Encoding Method for Vector Quantization Using L_1 and L_2 Norms to Narrow Necessary Search Scope(Image Processing, Image Pattern Recognition)
• A Fast Encoding Method for Vector Quantization Based on 2-Pixel-Merging Sum Pyramid Data Structure(Image)
• A nonlinear cepstral compensation method for noisy speech processing (音声言語情報処理 研究報告 第1回音声言語シンポジウム(SPLC))
• Extracting person's speech individually from original records of meeting by speaker identification technique
• Control of nitrogen profile in radical nitridation of SiO_2 films
• Tribological study for low shear force CMP process on damascene interconnects (シリコン材料・デバイス)
• Fully-Parallel VLSI Implementation of Vector Quantization Processor Using Neuron-MOS Technology (Special Issue on Integrated Electronics and New System Paradigms)
• Impact of fully depleted silicon-on-insulator accumulation-mode CMOS on Si(110) (シリコン材料・デバイス)
• Performance Comparison of Ultra-thin FD-SOI Inversion-, Intrinsic- and Accumulation-Mode MOSFETs
• Highly Reliable MOS Trench Gate FET by Oxygen Radical Oxidation
• Improved J-E Characteristics and Stress Induced Leakage Currents (SILC) in Oxynitride Films Grown at 400℃ by Microwave-Excited High-Density Kr/O_2/NH_3 Plasma
• Low Temperature Gate Oxidation MOS Transistor Produced by Kr/O_2 Microwave Excited High-Density Plasma
• Ultra-Thin Silicon Oxynitride Film Grown at Low-Temperature by Microwave-Excited High-Density Kr/O_2/N_2 Plasma
• Ultra-Thin Silicon Oxynitride Films as Cu Diffusion Barrier for Lowering Interconnect Resistivity
• High-Integrity Silicon Oxide Grown at Low-Temperature by Atomic Oxygen Generated in High-Density Krypton Plasma
• Low-Temperature Formation of Silicon Nitride Film by Direct Nitridation Employing High-Density and Low-Energy Ion Bombardment
• PELOC : 動的再構成FPGA用自動配置配線ツール : フレキシブルプロセッサへの応用(設計手法とシステムソフトウェア)
• Effect of in-situ Formed Interlayer at Ta-SiO_2 interface on Performance and Reliability in Ta-Gate MOS Devices
• A Fine-Grained Programmable Logic Module with Small Amount of Configuration Data for Dynamically Reconfigurable Field-Programmable Gate Array
• Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
• Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
• A Technology for Reducing Flicker Noise for ULSI Applications
• High-Quality Silicon Oxide Film Formed by Diffusion Region Plasma Enhanced Chemical Vapor Deposition and Oxygen Radical Treatment Using Microwave-Excited High-Density Plasma
• Thin and Low-Resistivity Tantalum Nitride Diffusion Barrier and Giant-Grain Copper Interconnects for Advanced ULSI Metallization
• Thin and Low-Resistivity Tantalum Nitride Diffusion Barrier and Giant-Grain Copper Interconnects for Advanced ULSI Metallization
• Dopant-Free Channel Transistor with Punchthrough Control Region under Source and Drain
• フレキシブルプロセッサ : パーソナルユースHWエミュレータ向け動的再構成可能ロジックアレイ(VLSI回路, デバイス技術(高速, 低電圧, 低電力))
• フレキシブルプロセッサ : パーソナルユースHWエミュレータ向け動的再構成可能ロジックアレイ(VLSI回路, デバイス技術(高速, 低電圧, 低電力))
• 有機物汚染がシリコン素子に与える影響
• Nitrogen Profile Study for SiON Gate Dielectrics of Advanced DRAM
• Data Analysis Technique of Atomic Force Microscopy for Atomically Flat Silicon Surfaces
• Low Contact Resistance with Low Schottky Barrier for N-type Silicon Using Yttrium Silicide
• Very Low Bit Error Rate in Flash Memory using Tunnel Dielectrics formed by Kr/O_2/NO Plasma Oxynitridation
• PVD Tantalum Oxide with Buffer Silicon Nitride Stacked High-k MIS Structure Using Low Temperature and High Density Plasma Processing
• Improved Transconductance and Gate Insulator Integrity of MISFETs with Si_3N_4 Gate Dielectric Fabricated by Microwave-Excited High-Density Plasma at 400℃
• Low Resistivity PVD TaNx/Ta/TaNx Stacked Metal Gate CMOS Technology Using Self-Grown bcc-Phased Tantalum on TaNx Buffer Layer
• A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies
• A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies
• A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation(Session2: Silicon Devices I)
• A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation(Session2: Silicon Devices I)
• The Evaluation of New Amorphous Hydrocarbon Film aCHx, for Copper Barrier Dielectric Film in Low-k Copper Metallization
• Low Dielectric Constant Non-Porous Fluorocarbon Films for Inter-Layer Dielectric
• A High S/N Ratio Object Extraction CMOS Image Sensor with Column Parallel Signal Processing
• A Large-Signal MOSFET Model Based on Transient Carrier Response for RF Circuits
• A High S/N Ratio Object Extraction CMOS Image Sensor with Column Parallel Signal Processing
• Analysis of High-Speed Signal Behavior in a Miniaturized Interconnect(Special Issue on Advanced Sub-0.1μm CMOS Devices)
• Interconnect and Substrate Structure for Gigascale Integration
• Interconnect and Substrate Structure for High Speed Giga-Scale Integration
• Characterization of Zinc Oxide Films Grown by a Newly Developed Plasma Enhanced MOCVD Employing Microwave Excited High Density Plasma
• Damage-Free Microwave-Excited Plasma Contact Hole Etching without Carrier Deactivation at the Interface between Silicide and Heavily-Doped Si
• Influence of Interface Structure on Oxidation Rate of Silicon : Surfaces, Interfaces, and Films
• High-Speed Damage-Free Contact Hole Etching Using Dual Shower Head Microwave-Excited High-Density-Plasma Equipment
• A Study on Reclaimed Photoresist Developer Using an Electrodialysis Method
• A Study on Reclaimed Photoresist Developer Using an Electrodialysis Method
• Ferroelectric Sr_2(Ta_, Nb_x)_2O_7 with a Low Dielectric Constant by Plasma Physical Vapor Deposition and Oxygen Radical Treatment
• Manufacturing Process of Flat Display(Micro Mechanical Engineering)
• Sonoluminescence measurement of 1MHz ultrasonic cavitation and effect of dissolved gases
• Ultra-Shallow and Low-Leakage p^+n Junctions Formation by Plasma Immersion Ion Implantation (PIII) and Low-Temperature Post-Implantation Annealing
• A Dynamically Reconfigurable Processor with Multi-Mode Operation Based on Newly Developed Full-Adder/D-Flip-Flop Merged Module (FDMM)
• Impurity Measurement in Specialty Gases Using an Atmospheric Pressure Ionizaiton Mass Spectrometer with a Two-Compartment Ion Source
• Impurity Measurement in Specialty Gases Using Atmospheric Pressure Ionization Mass Spectrometer with Two Compartments Ion Source
• A New Microwave-Excited Plasma Etching Equipment for Separating Plasma Excited Region from Etching Process Region
• ヘテロジニアス・マルチコア/マルチチップによる低消費電力画像処理のための機能分散処理ソフトウェア
• ヘテロジニアス・マルチコア/マルチチップによる低消費電力画像処理のための機能分散処理ソフトウェア
• The Effect of Organic Contaminations Molecular Weights in the Cleanroom Air on MOS Devices Degradation - a Controlled laminar Air Flow Experiment
• The Effect of Organic Compounds Contamination on the Electrical Characteristics of Ultra-Thin Gate Oxide Films
• FPGAを用いたAndroid OS性能評価システムの開発(ネットワークソフトウエア(ソフトウエアアーキテクチャ,ミドルウエア),NWアプリケーション,SOA/SDP,NGN/IMS/API,分散制御・ダイナミックルーチング,グリッド,NW及びシステム信頼性,NW及びシステム評価,一般)
• 3次元積層LSI開発のためのスケーラブルなプロトタイピング・システム(アーキテクチャ設計2,システムオンシリコンを支える設計技術)
• チェックポインティングとコード差分実行による時短シミュレーション法の提案
• 流量制限による相互結合網の実効性能改善の検討
• 流量制限による相互結合網の実効性能改善の検討
• 長時間シミュレーションにおける効率的デバッグ手法の提案
• Valgrindを用いたパスプロファイリングツールの開発
• 分散オブジェクトORBエンジンの導入によるFPGA搭載システム連携の短期間開発事例(FPGAシステムとハードウェア開発,デザインガイア2012-VLSI設計の新しい大地-)
• 2パス限定投機方式におけるループ展開の効果(プロセッサアーキテクチャ,2012年並列/分散/協調処理に関する『鳥取』サマー・ワークショップ(SWoPP鳥取2012))
• スヌープキャッシュをベースにした投機的メモリアクセス機構の提案(プロセッサアーキテクチャ,デザインガイア2012-VLSI設計の新しい大地-)
• 分岐予測を応用したループ内パス予測方式の検討(プロセッサアーキテクチャ,2012年並列/分散/協調処理に関する『鳥取』サマー・ワークショップ(SWoPP鳥取2012))
• 履歴情報詳細化によるパス予測の高精度化の検討(プロセッサアーキテクチャ,デザインガイア2012-VLSI設計の新しい大地-)
• ループにおけるパス予測と分岐予測の関連性についての考察 (コンピュータシステム)
• Valgrindを利用した自動並列処理システムにおける実行時オーバヘッドの削減 (コンピュータシステム)
• 圧縮方式の動的切り替えによる通信帯域の有効活用の検討 (コンピュータシステム)
• 高位合成ツールJavaRockによる倒立振子制御処理の高速化 (リコンフィギャラブルシステム)
• MIPS命令パイプラインベースの簡易VLIWプロセッサ
• コード差分シミュレーション法におけるチェックポイント削減の検討 (コンピュータシステム)

もっと見る 閉じる

スポンサーリンク