Sugawa Shigetoshi | Department Of Electronic Engineering Tohoku University

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著作論文

High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance(Session 9B : Nano-Scale devices and Physics)
Impact of fully depleted silicon-on-insulator accumulation-mode CMOS on Si(110) (シリコン材料・デバイス)
Performance Comparison of Ultra-thin FD-SOI Inversion-, Intrinsic- and Accumulation-Mode MOSFETs
Highly Reliable MOS Trench Gate FET by Oxygen Radical Oxidation
Improved J-E Characteristics and Stress Induced Leakage Currents (SILC) in Oxynitride Films Grown at 400℃ by Microwave-Excited High-Density Kr/O_2/NH_3 Plasma
Ultra-Thin Silicon Oxynitride Film Grown at Low-Temperature by Microwave-Excited High-Density Kr/O_2/N_2 Plasma
Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
Electric characteristics of Si_3N_4 films formed by directly radical nitridation on Si (110) and Si (100) surfaces
Nitrogen Profile Study for SiON Gate Dielectrics of Advanced DRAM
Low Contact Resistance with Low Schottky Barrier for N-type Silicon Using Yttrium Silicide
Very Low Bit Error Rate in Flash Memory using Tunnel Dielectrics formed by Kr/O_2/NO Plasma Oxynitridation
Improved Transconductance and Gate Insulator Integrity of MISFETs with Si_3N_4 Gate Dielectric Fabricated by Microwave-Excited High-Density Plasma at 400℃
Low Resistivity PVD TaNx/Ta/TaNx Stacked Metal Gate CMOS Technology Using Self-Grown bcc-Phased Tantalum on TaNx Buffer Layer
A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies
A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies
A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation(Session2: Silicon Devices I)
A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation(Session2: Silicon Devices I)
Damage-Free Microwave-Excited Plasma Contact Hole Etching without Carrier Deactivation at the Interface between Silicide and Heavily-Doped Si
Study of the Metal-Ferroelectric-Insulator-Si Structure Device Formation by Controlling Properties of High Frequency and Microwave Excited Plasma
The Effect of Organic Contaminations Molecular Weights in the Cleanroom Air on MOS Devices Degradation - a Controlled laminar Air Flow Experiment
The Effect of Organic Compounds Contamination on the Electrical Characteristics of Ultra-Thin Gate Oxide Films
Technology of Ferroelectric Thin Film Formation with Large Coercive Field for Future Scaling Down of Ferroelectric Gate FET Memory Device
A New Statistical Evaluation Method for the Variation of MOSFETs
Low Leakage Current and Low Resistivity p^+n Diodes on Si(110) Fabricated by Ga^+/B^+ Combination I/I and Low Temperature Annealing
Formation of Ferroelectric Sr_2(Ta_,Nb_x)_2O_7 Thin Film on Amorphous SiO_2 by Microwave-Excited Plasma Enhanced Metalorganic Chemical Vapor Deposition
Impact of The Improved High Performance Si(110) Oriented MOSFETs by Using Accumulation-Mode Fully Depleted SOI Devices
A Comparative Examination of Polyoxide Films Performance Grown by Conventional Dry Thermal (900℃) or Plasma Assisted (400℃) Oxidation Techniques
Control of Nitrogen Depth Profile near Silicon Oxynitride/Si(100) Interface Formed by Radical Nitridation
A High S/N Ratio Object Extraction CMOS Image Sensor with Column Parallel Signal Processing
Interconnect and Substrate Structure for Gigascale Integration

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