Teramoto Akinobu | New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan
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概要
- Teramoto Akinobuの詳細を見る
- 同名の論文著者
- New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japanの論文著者
関連著者
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Ohmi Tadahiro
New Industry Creation Hatchery Center (niche) Tohoku University
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Sugawa Shigetoshi
Graduate School Of Engineering Tohoku University
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Teramoto Akinobu
New Industry Creation Hatchery Center Tohoku Univ.
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TERAMOTO Akinobu
New Industry Creation Hatchery Center, Tohoku University
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Ohmi Tadahiro
New Industry Creation Hatchery Center Future Information Industry Creation Center Tohoku University
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OHMI Tadahiro
New Industry Creation Hatchery Center, Tohoku University
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Teramoto Akinobu
New Industry Creation Hatchery Center Tohoku University
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SUGAWA Sigetoshi
Tohoku University
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Hirayama Masaki
New Industry Creation Hatchery Center Tohoku University
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Sugawa Shigetoshi
Department Of Electronic Engineering Tohoku University
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Sugawa S
Graduate School Of Engineering Tohoku University
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Teramoto Akinobu
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Teramoto Akinobu
University Of Tohoku New Industry Creation Hatchery Center (niche)
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SUGAWA Shigetoshi
Graduate School of Engineering, Tohoku University
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Teramoto A
New Industry Creation Hatchery Center Tohoku University
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Ohmi T
Tohoku Univ. Sendai‐shi Jpn
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Kuroda Rihito
Graduate School Of Engineering Tohoku University
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HIGUCHI Masaaki
TOSHIBA CORPORATION
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Hirayama Masaki
Toshiba Corporation
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Goto Tetsuya
New Industry Creation Hatchery Center Tohoku University
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Suwa Tomoyuki
New Industry Creation Hatchery Center Tohoku University
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HIRAYAMA Masaki
New Industry Creation Hatchery Center, Tohoku University
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大見 忠弘
東北大学
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Ohmi Tadahiro
Department Of Electronic Engineering Tohoku University
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Ohmi Tadahiro
The New Industry Creation Hatchery Center (niche) Tohoku University
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Teramoto Akinobu
Tohoku Univ. Sendai Jpn
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TAKAHASHI Ichirou
New Industry Creation Hatchery Center, Tohoku University
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Isogai Tatsunori
Graduate School Of Engineering Tohoku University
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寺本 章伸
東北大学未来科学技術共同研究センター
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大見 忠弘
東北大学未来科学技術共同研究センター
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大見 忠弘
東北大学未来科学技術共同研究センター:東北大学wpiリサーチセンター
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Tanaka Hiroaki
New Industry Creation Hatchery Center Tohoku University
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SUGAWA Shigetoshi
New Industry Creation Hatchery Center, Tohoku University
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HATTORI Takeo
New Industry Creation Hatchery Center, Tohoku University
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Inokuchi Atsutoshi
New Industry Creation Hatchery Center Tohoku University
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Abe Kenichi
Graduate School Of Engineering Tohoku University
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Watabe Shunichi
Graduate School Of Engineering Tohoku University
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Cheng Weitao
New Industry Creation Hatchery Center Tohoku University
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Gaubert Philippe
New Industry Creation Hatchery Center Tohoku University
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Funaiwa Kiyoshi
New Industry Creation Hatchery Center Tohoku University
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Takahashi Ichirou
Graduate School Of Engineering Tohoku University
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Nakao Yukihisa
Graduate School of Engineering, Tohoku University
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KURODA Rihito
Graduate School of Engineering, Tohoku University
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TANAKA Hiroaki
New Industry Creation Hatchery Center, Tohoku University
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Ohmi Tadahiro
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University:(present Addre
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SUWA Tomoyuki
New Industry Creation Hatchery Center, Tohoku University
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ISOGAI Tatsunori
Graduate School of Engineering, Tohoku University
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KUMAGAI Yuki
Graduate School of Engineering Tohoku University
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NOZAWA Toshihisa
TOKYO ELECTRON LTD.
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MATSUOKA Takaaki
TOKYO ELECTRON LTD.
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Sugawa Shigetoshi
Management Of Science & Technology Department School Of Engineering Tohoku University
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Sakurai Hiroyuki
New Industry Creation Hatchery Center Tohoku University
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Watanuki Kohei
New Industry Creation Hatchery Center Tohoku University
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Kawase Kazumasa
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Asahara Hirokazu
New Industry Creation Hatchery Center Tohoku University
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Fujisawa Takafumi
Graduate School Of Engineering Tohoku University
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Azumi Keita
New Industry Creation Hatchery Center Tohoku University
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野平 博司
Musashi Institute Of Technology
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大見 忠弘
東北大学 未来科学技術共同研究センター
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IMAI Hiroshi
Graduate School of Science and Engineering, Kagoshima University
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NOHIRA Hiroshi
Musashi Institute of Technology
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Watabe Shunichi
Graduate School of Engineering, Tohoku University
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INOKUCHI Atsutoshi
New Industry Creation Hatchery Center, Tohoku University
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Nohira Hiroshi
Faculty Of Engineering Musashi Institute Of Technology
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Nakazawa Hiroshi
New Industry Creation Hatchery Center Tohoku University
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Umeda Hiroshi
Process Development Dept. Wafer Process Engineering Development Div. Lsi Manufacturing Unit Renesas
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WEITAO Cheng
Graduate School of Engineering, Tohoku University
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Cheng Weitao
Graduate School of Engineering, Tohoku University
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Tsujikawa Shimpei
Process Development Dept. Wafer Process Engineering Development Div. Lsi Manufacturing Unit Renesas
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Shirai Yasuyuki
New Industry Creation Hatchery Center (niche) Tohoku University
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Inoue Masao
Process Development Dept. Process Technology Development Div. Production And Technology Unit Renesas
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Imai Hiroshi
Graduate School Of Engineering Tohoku University
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Tanaka Hiroaki
Graduate School Of Engineering The University Of Tokyo
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Teramoto Akinobu
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Teramoto Akinobu
New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan
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Teramoto Akinobu
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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GAUBERT Philippe
New Industry Creation Hatchery Center, Tohoku University
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NAKANO Yukihisa
Graduate School of Engineering, Tohoku University
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IKENAGA Eiji
Japan Synchrotron Radiation Research Institute/SPring-8
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Ikenaga Eiji
Japan Synchrotron Radiation Research Institute
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Hattori Tetsuya
Depaetment Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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ARATANI Takashi
Shin-Etsu Chemical Co., Ltd.
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USHIO Jiro
Hitachi, Ltd.
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TAKEUCHI Masashi
Tokyo Electron AT Ltd.
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HONDA Minoru
Tokyo Electron AT Ltd.
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ISHIZUKA Shu-ichi
Tokyo Electron AT Ltd.
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HIROTA Yoshihiro
Tokyo Electron AT Ltd.
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Hattori Takashi
Central Research Laboratory Hitachi Ltd.
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TAKAHASHI Hiroto
Graduate School of Engineering Tohoku University
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FUJITA Genya
Graduate School of Engineering Tohoku University
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Abe Kenichi
Graduate School of Engineering, Tohoku University
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Fujisawa Takafumi
Graduate School of Engineering, Tohoku University
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Sugimura Masahiko
Research and Development Center, Zeon Corporation
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Kawasaki Masafumi
Research and Development Center, Zeon Corporation
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ISHIKAWA Hiraku
TOKYO ELECTRON LTD.
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ITO Takashi
Graduate School of Engineering, Tohoku University
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Sugimura Masahiko
Research And Development Center Zeon Corporation
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Terasaki Masato
Tokyo Electron Ltd.
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Hattori T
New Industry Creation Hatchery Center Tohoku University
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Nakanishi Toshio
Tokyo Electron At Ltd. Hyogo Jpn
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ASAHARA Hirokazu
New Industry Creation Hatchery Center, Tohoku University
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Ushio Jiro
Hitachi Ltd.
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Konda Masahiro
New Industry Creation Hatchery Center Tohoku University
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FUNAIWA Kiyoshi
New Industry Creation Hatchery Center, Tohoku University
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SAKURAI Hiroyuki
New Industry Creation Hatchery Center, Tohoku University
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ISOGAI Tatsunori
New Industry Creation Hatchery Center, Tohoku University
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Shimada Hiroyuki
New Industry Creation Hatchery Center Tohoku University
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Akasaka Yasushi
Tokyo Electron Ltd.
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AZUMI Keita
New Industry Creation Hatchery Center, Tohoku University
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WATABE Syunichi
Graduate School of Engineering, Tohoku University
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Yamamoto Masashi
New Industry Creation Hatchery Center Tohoku University
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Akamatsu Yasuhiko
Process Development Dept. Wafer Process Engineering Development Div. Lsi Manufacturing Unit Renesas
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Hattori Takeo
Faculty Of Engineering Musashi Institute Of Technology
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KUROKI Shin-Ichiro
Graduate School of Engineering, Tohoku University
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Aratani Takashi
Shin-etsu Chemical Co. Ltd.
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Hamada Tatsufumi
Graduate School Of Engineering Tohoku University
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Yamashita Satoru
New Industry Creation Hatchery Center Tohoku University
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Kawasaki Masafumi
Research And Development Center Zeon Corporation
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Tanaka Yoshitsugu
Tokyo Electron Ltd.
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Teramoto Akinobu
New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 04, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Teramoto Akinobu
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aoba Aramaki, Aoba-ku, Sendai 980-8579, Japan
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OHMI Tadahiro
World Premier International Research Center, Tohoku University
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Philipossian Ara
University of Arizona
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Sampurno Yasa
University of Arizona
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Zhuang Yun
University of Arizona
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Kotani K
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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Kotani Koji
Graduate School Of Engineering Tohoku University
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Muro Takayuki
Japan Synchrotron Radiation Res. Inst. Hyogo Jpn
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Tanaka Yoshitsugu
Tokyo Electron Ltd. Tokyo Jpn
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HATTORI Takeo
Musashi Institute of Technology
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Cheng Jiang
Araca Inc.
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Kotani Koji
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
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KAWASE Kazumasa
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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UMEDA Hiroshi
Process Development Dept., Wafer Process Engineering Development Div., LSI Manufacturing Unit, Renes
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INOUE Masao
Process Development Dept., Wafer Process Engineering Development Div., LSI Manufacturing Unit, Renes
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TSUJIKAWA Shimpei
Process Development Dept., Wafer Process Engineering Development Div., LSI Manufacturing Unit, Renes
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AKAMATSU Yasuhiko
Process Development Dept., Wafer Process Engineering Development Div., LSI Manufacturing Unit, Renes
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Tye Ching
Graduate School Of Engineering Tohoku University
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CHENG Weitao
New Industry Creation Hatchery Center, Tohoku University
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Ohmi Tadahiro
Tohoku Univ. Sendai Jpn
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HIGUCHI Masaaki
Graduate School of Engineering, Tohoku University
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ARATANI Takashi
Graduate School of Engineering, Tohoku University
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HAMADA Tatsufumi
Graduate School of Engineering, Tohoku University
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SHINAGAWA Seiji
Musashi Institute of Technology
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Akasaka Yasushi
Tokyo Electron Ltd. Tokyo Jpn
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WATANABE Kazufumi
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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TANAKA Hiroaki
Graduate School of Engineering, Tohoku University
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Ishino Hideaki
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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Tanaka Koutarou
Management Of Science And Technology Department Graduate School Of Engineering Tohoku University
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Kotani K
Tohoku Univ. Sendai‐shi Jpn
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MURAKAWA Shigemi
Tokyo Electron Ltd.
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NAKANISHII Toshio
Tokyo Electron AT Ltd.
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SUGAWARA Takuya
Tokyo Electron Ltd.
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SUGAWA Shigetoshi
Tokyo Electron AT Ltd.
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KONDA Masahiro
New Industry Creation Hatchery Center, Tohoku University
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Nakano Yukihisa
Graduate School Of Engineering Tohoku University
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ITOH Azumi
New Industry Creation Hatchery Center, Tohoku University
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YASUDA Seiji
New Industry Creation Hatchery Center, Tohoku University
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Teramoto Akinobu
Ulsi Laboratory Mitsubishi Electric Corporation
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WATANABE Kazufumi
Graduate School of Engineering, Tohoku University
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WATANUKI Kohei
New Industry Creation Hatchery Center, Tohoku University
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TERASAKI Masato
New Industry Creation Hatchery Center, Tohoku University
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NAKAZAWA Hiroshi
New Industry Creation Hatchery Center, Tohoku University
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YAMANAKA Jiro
New Industry Creation Hatchery Center, Tohoku University
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Hayakawa Yukio
New Industry Creation Hatchery Center Tohoku University
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YAMAUCHI Hiroshi
New Industry Creation Hatchery Center, Tohoku University
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TERASAKI Masato
Graduate School of Engineering, Tohoku University
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Kumagai Yuki
Department Of Applied Physics And Chemistry The University Of Electro-communications
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Yamanaka Jiro
New Industry Creation Hatchery Center Tohoku University
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Chuanjie Zhong
New Industry Creation Hatchery Center Tohoku University
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TAKAHASHI Ichirou
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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SAKURAI Hiroyuki
Specialty Products Division, UBE INDUSTRIES, LTD.
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Hirai Kentaro
New Industry Creation Hatchery Center Tohoku University
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Yamada Atsuhiko
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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SHIRAI Yasuyuki
New Industry Creation Hatchery Center, University of Tohoku
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Nakajima Kaoru
Department Of Engineering Physics And Mechanics Kyoto University
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Kato Takeyoshi
New Industry Creation Hatchery Center Tohoku University
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Suzuki Motofumi
Department Of Global Agricultural Sciences Graduate School Of Agricultural And Life Science The Univ
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Urabe Shinichi
New Industry Creation Hatchery Center Tohoku University
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TSUNODA Tomoya
New Industry Creation Hatchery Center, Tohoku University
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YAMADA Atsuhiko
Graduate School of Engineering, Tohoku University
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YAMAMOTO Masashi
New Industry Creation Hatchery Center, Tohoku University
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Yasuda Seiji
New Industry Creation Hatchery Center Tohoku University
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Watanabe Kazufumi
Graduate School Of Engineering Tohoku University
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YAMASHITA Satoru
New Industry Creation Hatchery Center, Tohoku University
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Itoh Azumi
New Industry Creation Hatchery Center Tohoku University
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Shirai Yasuyuki
New Industry Creation Hatchery Center Tohoku University
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Tsunoda Tomoya
New Industry Creation Hatchery Center Tohoku University
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Inoue Masao
Process Development Dept. Wafer Process Engineering Development Div. Lsi Manufacturing Unit Renesas
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Kinoshita Toyohiko
Japan Synchrotron Radiation Res. Inst./spring‐8 Hyogo Jpn
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Tsurekawa Sadahiro
Laboratory Of Materials Design And Interface Engineering Department Of Nanomechanics Graduate School
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Kimura Kenji
Deparment Of Engineering Science Kyoto University
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TANAKA Kouji
New Industry Creation Hatchery Center, Tohoku University
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Takafumi Fujisawa
Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
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Fujisawa Takafumi
Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
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Shigetoshi Sugawa
Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
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Tadahiro Ohmi
New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan
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Teramoto Akinobu
New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba, Aramaki, Aoba, Sendai 980-8579, Japan
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Teramoto Akinobu
New Industry Creation Hatchery Center, Tohoku University, 04 Aza Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan
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Teramoto Akinobu
New Industry Creation Hatchery Center, Tohoku University, 10 Aza Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan
著作論文
- Low frequency noise in Si(100) and Si(110) p-channel MOSFETs (シリコン材料・デバイス)
- High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance(Session 9B : Nano-Scale devices and Physics)
- High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance(Session 9B : Nano-Scale devices and Physics)
- Control of nitrogen profile in radical nitridation of SiO_2 films
- Tribological study for low shear force CMP process on damascene interconnects (シリコン材料・デバイス)
- Impact of fully depleted silicon-on-insulator accumulation-mode CMOS on Si(110) (シリコン材料・デバイス)
- Performance Comparison of Ultra-thin FD-SOI Inversion-, Intrinsic- and Accumulation-Mode MOSFETs
- Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
- Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
- Nitrogen Profile Study for SiON Gate Dielectrics of Advanced DRAM
- Data Analysis Technique of Atomic Force Microscopy for Atomically Flat Silicon Surfaces
- Low Contact Resistance with Low Schottky Barrier for N-type Silicon Using Yttrium Silicide
- Very Low Bit Error Rate in Flash Memory using Tunnel Dielectrics formed by Kr/O_2/NO Plasma Oxynitridation
- A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies
- A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies
- A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation(Session2: Silicon Devices I)
- A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation(Session2: Silicon Devices I)
- The Evaluation of New Amorphous Hydrocarbon Film aCHx, for Copper Barrier Dielectric Film in Low-k Copper Metallization
- Low Dielectric Constant Non-Porous Fluorocarbon Films for Inter-Layer Dielectric
- A Large-Signal MOSFET Model Based on Transient Carrier Response for RF Circuits
- Characterization of Zinc Oxide Films Grown by a Newly Developed Plasma Enhanced MOCVD Employing Microwave Excited High Density Plasma
- Damage-Free Microwave-Excited Plasma Contact Hole Etching without Carrier Deactivation at the Interface between Silicide and Heavily-Doped Si
- Tribological effects of brush scrubbing in post chemical mechanical planarization cleaning on electrical characteristics in novel non-porous low-k dielectric fluorocarbon on Cu interconnects (Special issue: Advanced metallization for ULSI applications)
- Electrical characteristics of novel non-porous low-k dielectric fluorocarbon on Cu interconnects for 22nm generation and beyond (Special issue: Advanced metallization for ULSI applications)
- Study of the Metal-Ferroelectric-Insulator-Si Structure Device Formation by Controlling Properties of High Frequency and Microwave Excited Plasma
- MFIS-structure Memory Device with High Quality Ferroelectric Sr_2(Ta_Nb_x)_2O_7 Formed by Physical Vapor Deposition and Oxygen Radical Treatment by Radical Oxygen Assisted Layer by Layer(ROALL) deposition
- Analysis of the Low-Frequency Noise Reduction in Si(100) Metal--Oxide--Semiconductor Field-Effect Transistors
- Impact of Channel Direction Dependent Low Field Hole Mobility on (100) Orientation Silicon Surface
- Suppression of the low frequency noise level in (100) and (110) oriented silicon p-MOSFETs induced by an alkali-free cleaning process
- High-Rate Deposition of Amorphous Silicon Films by Microwave-Excited High-Density Plasma
- Technology of Ferroelectric Thin Film Formation with Large Coercive Field for Future Scaling Down of Ferroelectric Gate FET Memory Device
- A New Statistical Evaluation Method for the Variation of MOSFETs
- Low Leakage Current and Low Resistivity p^+n Diodes on Si(110) Fabricated by Ga^+/B^+ Combination I/I and Low Temperature Annealing
- Electrical Properties of Metal-Oxide-Containing SiO2 Films Formed by Organosiloxane Sol–Gel Precursor
- Formation of Ferroelectric Sr_2(Ta_,Nb_x)_2O_7 Thin Film on Amorphous SiO_2 by Microwave-Excited Plasma Enhanced Metalorganic Chemical Vapor Deposition
- Impact of The Improved High Performance Si(110) Oriented MOSFETs by Using Accumulation-Mode Fully Depleted SOI Devices
- Impact of High Performance Accumulation-Mode Fully Depleted SOI MOSFETs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Impact of High Performance Accumulation-Mode Fully Depleted SOI MOSFETs (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Highly reliable radical SiO2 films on atomically flat silicon surface formed by low temperature pure Ar annealing (Special issue: Dielectric thin films for future electron devices: science and technology)
- Large-scale test circuits for high-speed and highly accurate evaluation of variability and noise in metal-oxide-semiconductor field-effect transistor electrical characteristics
- In situ Observation of Grain Growth on Electroplated Cu Film by Electron Backscatter Diffraction
- Nitrogen Profile Study for SiON Gate Dielectrics of Advanced Dynamic Random Access Memory
- Experimental Investigation of Effect of Channel Doping Concentration on Random Telegraph Signal Noise
- Anomalous Random Telegraph Signal Extractions from a Very Large Number of n-Metal Oxide Semiconductor Field-Effect Transistors Using Test Element Groups with 0.47 Hz–3.0 MHz Sampling Frequency
- Depth Profile of Nitrogen Atoms in Silicon Oxynitride Films Formed by Low-Electron-Temperature Microwave Plasma Nitridation
- Complementary Metal–Oxide–Silicon Field-Effect-Transistors Featuring Atomically Flat Gate Insulator Film/Silicon Interface
- Control of Nitrogen Depth Profile near Silicon Oxynitride/Si(100) Interface Formed by Radical Nitridation
- Control of Nitrogen Depth Profile and Chemical Bonding State in Silicon Oxynitride Films Formed by Radical Nitridation
- Hole Mobility in Accumulation Mode Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue : Solid State Devices and Materials (2))
- Deposition of Microcrystalline Si1-xGex by RF Magnetron Sputtering on SiO2 Substrates
- Impact of Tungsten Capping Layer on Yttrium Silicide for Low-Resistance n+-Source/Drain Contacts
- Lattice Distortion at SiO2/Si(001) Interface Studied with High-Resolution Rutherford Backscattering Spectroscopy/Channeling
- Very Low Bit Error Rate in Flash Memory Using Tunnel Dielectrics Formed by Kr/O2/NO Plasma Oxynitridation
- Integration Process Development for Improved Compatibility with Organic Non-Porous Ultralow-k Dielectric Fluorocarbon on Advanced Cu Interconnects
- High Integrity SiO2 Gate Insulator Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition for AlGaN/GaN Hybrid Metal--Oxide--Semiconductor Heterojunction Field-Effect Transistor on Si Substrate
- Evaluation of New Amorphous Hydrocarbon Film for Copper Barrier Dielectric Film in Low-$k$ Copper Metallization
- Recovery Characteristics of Anomalous Stress-Induced Leakage Current of 5.6 nm Oxide Films
- Ferroelectric Sr2(Ta1-x, Nbx)2O7 with a Low Dielectric Constant by Plasma Physical Vapor Deposition and Oxygen Radical Treatment
- High-Quality Silicon Oxide Film Formed by Diffusion Region Plasma Enhanced Chemical Vapor Deposition and Oxygen Radical Treatment Using Microwave-Excited High-Density Plasma
- A Study on Very High Performance Novel Balanced Fully Depleted Silicon-on-Insulator Complementary Metal–Oxide–Semiconductor Field-Effect Transistors on Si(110) Using Accumulation-Mode Device Structure for Radio-Frequency Analog Circuits
- Effects of Ion-Bombardment-Assist and High Temperature on Growth of Zinc Oxide Films by Microwave Excited High Density Plasma Enhanced Metal Organic Chemical Vapor Deposition
- A Low-Dielectric-Constant Sr2(Ta1-x,Nbx)2O7 Thin Film Controlling the Crystal Orientation on an IrO2 Substrate for One-Transistor-Type Ferroelectric Memory Device
- A Technology for Reducing Flicker Noise for ULSI Applications
- Relationship between Sr2(Ta1-x,Nbx)2O7 Crystal Phase and RF-Sputtering Plasma Condition for Metal–Ferroelectric–Insulator–Si Structure Device Formation
- Characterization of Zinc Oxide Films Grown by a Newly Developed Plasma Enhanced Metal Organic Chemical Vapor Deposition Employing Microwave Excited High Density Plasma
- Development of Microwave-Excited Plasma-Enhanced Metal–Organic Chemical Vapor Deposition System for Forming Ferroelectric Sr2(Ta1-x,Nbx)2O7 Thin Film on Amorphous SiO2
- Fabrication of Pt/Sr2(Ta1-x,Nbx)2O7/IrO2/SiO2/Si Device with Large Memory Window and Metal–Ferroelectric–Metal–Insulator–Si Field-Effect Transistor
- High-Speed Damage-Free Contact Hole Etching Using Dual Shower Head Microwave-Excited High-Density-Plasma Equipment
- Electric Characteristics of Si3N4 Films Formed by Directly Radical Nitridation on Si(110) and Si(100) Surfaces
- Performance Comparison of Ultrathin Fully Depleted Silicon-on-Insulator Inversion-, Intrinsic-, and Accumulation-Mode Metal–Oxide–Semiconductor Field-Effect Transistors
- High Quality SiO
- Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species
- On the Interface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology
- Impact of Improved High-Performance Si(110)-Oriented Metal–Oxide–Semiconductor Field-Effect Transistors Using Accumulation-Mode Fully Depleted Silicon-on-Insulator Devices
- Formation and Property of Yttrium and Yttrium Silicide Films as Low Schottcky Barrier material for n-Type Silicon
- Noise Performance of Accumulation MOSFETs
- New Statistical Evaluation Method for the Variation of Metal–Oxide–Semiconductor Field-Effect Transistors