Formation and Property of Yttrium and Yttrium Silicide Films as Low Schottcky Barrier material for n-Type Silicon

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概要

• 論文の詳細を見る

• As the candidate for the low Schottky barrier material for n-type silicon, physical and electrical properties of yttrium and its silicide were investigated. In order to prevent both Si surface and easily-oxidized low work function metals from being oxidized, N2 sealed cleaning and transfer system and capping layer on low work function metals were employed. Fabricated Al/Y/p-type silicon Schottky barrier diode showed an excellent $n$-value. The extracted Schottky barrier height for electrons of yttrium silicide is as low as 0.3 eV. This result can be applied to form low contact resistivity silicide/n-type silicon contact, and contribute to lower the parasitic source drain series resistance of metal–oxide–semiconductor devices.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-04-25

著者

• Goto Tetsuya

  New Industry Creation Hatchery Center Tohoku University

• Sugawa Shigetoshi

  Graduate School Of Engineering Tohoku University

• Isogai Tatsunori

  Graduate School Of Engineering Tohoku University

• Tanaka Hiroaki

  Graduate School Of Engineering The University Of Tokyo

• Ohmi Tadahiro

  New Industry Creation Hatchery Center (niche) Tohoku University

• Teramoto Akinobu

  New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan

• Tanaka Hiroaki

  Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

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