Integration Process Development for Improved Compatibility with Organic Non-Porous Ultralow-k Dielectric Fluorocarbon on Advanced Cu Interconnects

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概要

• 論文の詳細を見る

• Integration of an organic non-porous ultralow-k dielectric, fluorocarbon (k= 2.2), into advanced Cu interconnects was demonstrated. The challenges of process-induced damage, such as delamination and variances of both the structure and electrical properties of the fluorocarbon during fabrication, were investigated on Cu/fluorocarbon damascene interconnects. A titanium-based barrier layer, instead of a tantalum-based barrier layer, was used to avoid delamination between Cu and fluorocarbon in Cu/fluorocarbon interconnects. A moisture-hermetic dielectric protective layer was also effective to avoid damage induced by wet chemical cleaning. On the other hand, a post-etching nitrogen plasma treatment to form a stable protective layer on the surface of the fluorocarbon was proposed for the practical minimization of damage introduction to fluorocarbon in the following damascene process, such as post-etching cleaning.

• 2012-05-25

著者

• Kuroda Rihito

  Graduate School Of Engineering Tohoku University

• NOZAWA Toshihisa

  TOKYO ELECTRON LTD.

• MATSUOKA Takaaki

  TOKYO ELECTRON LTD.

• Sugawa Shigetoshi

  Graduate School Of Engineering Tohoku University

• Kawase Kazumasa

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• KUROKI Shin-Ichiro

  Graduate School of Engineering, Tohoku University

• Ohmi Tadahiro

  New Industry Creation Hatchery Center (niche) Tohoku University

• Teramoto Akinobu

  New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan

• Nemoto Takenao

  New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan

• Gu Xun

  Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

• Nemoto Takenao

  New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan

• Miyatani Kotaro

  Tokyo Electron Technology Development Institute, Sendai 981-3137, Japan

• Kobayashi Yasuo

  Tokyo Electron Technology Development Institute, Sendai 981-3137, Japan

• Tomita Yugo

  New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan

• Saito Akane

  Tokyo Electron Technology Development Institute, Inc., Nirasaki, Yamanashi 407-0175, Japan

• Miyatani Kotaro

  Tokyo Electron Technology Development Institute, Inc., Nirasaki, Yamanashi 407-0175, Japan

• Kuroda Rihito

  Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

• Gu Xun

  Graduate School of Engineering, Tohoku University

• Kawase Kazumasa

  Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan

• Kobayashi Yasuo

  Tokyo Electron Technology Development Institute, Inc., Nirasaki, Yamanashi 407-0175, Japan

• Matsuoka Takaaki

  Tokyo Electron Technology Development Institute, Inc., Nirasaki, Yamanashi 407-0175, Japan

• Nozawa Toshihisa

  Tokyo Electron Technology Development Institute, Inc., Nirasaki, Yamanashi 407-0175, Japan

• Kuroki Shin-Ichiro

  Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

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