Control of Nitrogen Depth Profile and Chemical Bonding State in Silicon Oxynitride Films Formed by Radical Nitridation
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概要
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Chemical bonding states and depth profiles of nitrogen in radical nitrided silicon oxide film formed in Ar/N2 plasma excited by microwave has been investigated using X-ray photoelectron spectroscopy with HF step etching. The main chemical bonding state of nitrogen atom is Si3$\equiv$N configuration, and the other unknown bonding state (termed Nhigh) is observed, whose peak energy shift is about $+4.8$ eV. The nitrogen atoms forming Si3$\equiv$N configuration accumulate only at the film surface and those forming Nhigh configuration are distributed deeper in the films. The Nhigh bond is very weak because it is desorbed completely at low temperature (300–500°C). Although the nitrogen atoms forming Nhigh configuration are removed by post O2-annealing, those forming Si3$\equiv$N configuration migrate toward the film/substrate interface and they increase negative bias temperature instability. In the case of ultra thin film, nitriding species forming Nhigh bond reach the film/substrate interface and form Si3$\equiv$N bond at the interface. Suppression of the generation of nitriding species forming Nhigh bond in the plasma is very important. It is clear that Nhigh bond is reduced using Ar/NH3 plasma.
- 2005-10-15
著者
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Umeda Hiroshi
Process Development Dept. Wafer Process Engineering Development Div. Lsi Manufacturing Unit Renesas
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Tsujikawa Shimpei
Process Development Dept. Wafer Process Engineering Development Div. Lsi Manufacturing Unit Renesas
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Akamatsu Yasuhiko
Process Development Dept. Wafer Process Engineering Development Div. Lsi Manufacturing Unit Renesas
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Kawase Kazumasa
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Inoue Masao
Process Development Dept. Process Technology Development Div. Production And Technology Unit Renesas
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Ohmi Tadahiro
New Industry Creation Hatchery Center (niche) Tohoku University
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Teramoto Akinobu
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aoba Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Teramoto Akinobu
New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan
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Suwa Tomoyuki
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 6-6-10 Aoba Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Higuchi Masaaki
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 6-6-10 Aoba Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Komura Masanori
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 6-6-10 Aoba Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Inoue Masao
Process Development Department, Wafer Process Engineering Development Division, LSI Manufacturing Unit, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Inoue Masao
Process Development Department, Process Technology Development Division, Production and Technology Unit, RENESAS Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Umeda Hiroshi
Process Development Department, Wafer Process Engineering Development Division, LSI Manufacturing Unit, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Umeda Hiroshi
Process Development Department, Process Technology Development Division, Production and Technology Unit, RENESAS Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Akamatsu Yasuhiko
Process Development Department, Wafer Process Engineering Development Division, LSI Manufacturing Unit, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Ohmi Tadahiro
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aoba Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Tsujikawa Shimpei
Process Development Department, Wafer Process Engineering Development Division, LSI Manufacturing Unit, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Tsujikawa Shimpei
Process Development Department, Process Technology Development Division, Production and Technology Unit, RENESAS Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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