Higuchi Masaaki | Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 6-6-10 Aoba Aramaki, Aoba-ku, Sendai 980-8579, Japan
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概要
- Higuchi Masaakiの詳細を見る
- 同名の論文著者
- Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 6-6-10 Aoba Aramaki, Aoba-ku, Sendai 980-8579, Japanの論文著者
関連著者
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Umeda Hiroshi
Process Development Dept. Wafer Process Engineering Development Div. Lsi Manufacturing Unit Renesas
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Tsujikawa Shimpei
Process Development Dept. Wafer Process Engineering Development Div. Lsi Manufacturing Unit Renesas
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Kawase Kazumasa
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Inoue Masao
Process Development Dept. Process Technology Development Div. Production And Technology Unit Renesas
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Ohmi Tadahiro
New Industry Creation Hatchery Center (niche) Tohoku University
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Teramoto Akinobu
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aoba Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Teramoto Akinobu
New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan
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Suwa Tomoyuki
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 6-6-10 Aoba Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Higuchi Masaaki
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 6-6-10 Aoba Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Inoue Masao
Process Development Department, Process Technology Development Division, Production and Technology Unit, RENESAS Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Umeda Hiroshi
Process Development Department, Process Technology Development Division, Production and Technology Unit, RENESAS Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Ohmi Tadahiro
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aoba Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Tsujikawa Shimpei
Process Development Department, Process Technology Development Division, Production and Technology Unit, RENESAS Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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HATTORI Takeo
New Industry Creation Hatchery Center, Tohoku University
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Sugawa Shigetoshi
Department Of Electronic Engineering Tohoku University
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Akamatsu Yasuhiko
Process Development Dept. Wafer Process Engineering Development Div. Lsi Manufacturing Unit Renesas
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Komura Masanori
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 6-6-10 Aoba Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Hattori Takeo
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aoba Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Inoue Masao
Process Development Department, Wafer Process Engineering Development Division, LSI Manufacturing Unit, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Umeda Hiroshi
Process Development Department, Wafer Process Engineering Development Division, LSI Manufacturing Unit, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Akamatsu Yasuhiko
Process Development Department, Wafer Process Engineering Development Division, LSI Manufacturing Unit, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Kawase Kazumasa
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Tsujikawa Shimpei
Process Development Department, Wafer Process Engineering Development Division, LSI Manufacturing Unit, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Sugawa Shigetoshi
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 6-6-10 Aoba Aramaki, Aoba-ku, Sendai 980-8579, Japan
著作論文
- Control of Nitrogen Depth Profile near Silicon Oxynitride/Si(100) Interface Formed by Radical Nitridation
- Control of Nitrogen Depth Profile and Chemical Bonding State in Silicon Oxynitride Films Formed by Radical Nitridation