Kawase Kazumasa | Advanced Technology R&d Center Mitsubishi Electric Corporation
スポンサーリンク
概要
関連著者
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Kawase Kazumasa
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Ohmi Tadahiro
New Industry Creation Hatchery Center (niche) Tohoku University
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Teramoto Akinobu
New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan
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Umeda Hiroshi
Process Development Dept. Wafer Process Engineering Development Div. Lsi Manufacturing Unit Renesas
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Tsujikawa Shimpei
Process Development Dept. Wafer Process Engineering Development Div. Lsi Manufacturing Unit Renesas
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Inoue Masao
Process Development Dept. Process Technology Development Div. Production And Technology Unit Renesas
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Inoue Masao
Process Development Department, Process Technology Development Division, Production and Technology Unit, RENESAS Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Umeda Hiroshi
Process Development Department, Process Technology Development Division, Production and Technology Unit, RENESAS Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Tsujikawa Shimpei
Process Development Department, Process Technology Development Division, Production and Technology Unit, RENESAS Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Akamatsu Yasuhiko
Process Development Dept. Wafer Process Engineering Development Div. Lsi Manufacturing Unit Renesas
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Teramoto Akinobu
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aoba Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Suwa Tomoyuki
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 6-6-10 Aoba Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Higuchi Masaaki
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 6-6-10 Aoba Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Akamatsu Yasuhiko
Process Development Department, Wafer Process Engineering Development Division, LSI Manufacturing Unit, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Ohmi Tadahiro
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aoba Aramaki, Aoba-ku, Sendai 980-8579, Japan
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TERAMOTO Akinobu
New Industry Creation Hatchery Center, Tohoku University
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OHMI Tadahiro
New Industry Creation Hatchery Center, Tohoku University
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Kuroda Rihito
Graduate School Of Engineering Tohoku University
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KAWASE Kazumasa
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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UMEDA Hiroshi
Process Development Dept., Wafer Process Engineering Development Div., LSI Manufacturing Unit, Renes
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INOUE Masao
Process Development Dept., Wafer Process Engineering Development Div., LSI Manufacturing Unit, Renes
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TSUJIKAWA Shimpei
Process Development Dept., Wafer Process Engineering Development Div., LSI Manufacturing Unit, Renes
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AKAMATSU Yasuhiko
Process Development Dept., Wafer Process Engineering Development Div., LSI Manufacturing Unit, Renes
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Ohmi Tadahiro
Tohoku Univ. Sendai Jpn
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HATTORI Takeo
New Industry Creation Hatchery Center, Tohoku University
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UEHARA Yasushi
Advanced Technology R&D Center, Mitsubishi, Electric Corp. Department of Chemistry, Faculty of Scien
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NOZAWA Toshihisa
TOKYO ELECTRON LTD.
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MATSUOKA Takaaki
TOKYO ELECTRON LTD.
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Teramoto Akinobu
Tohoku Univ. Sendai Jpn
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Sugawa Shigetoshi
Graduate School Of Engineering Tohoku University
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Sugawa Shigetoshi
Department Of Electronic Engineering Tohoku University
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OISHI Toshiyuki
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Ohmi Tadahiro
New Industry Creation Hatchery Center Future Information Industry Creation Center Tohoku University
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Tokuda Yasunori
Advanced R&d Technology Center Mitsubishi Electric Corporation
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Nanjo Takuma
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Suita Muneyoshi
Advanced Technology R&d Center Mitsubishi Electric Corp.
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Teramoto Akinobu
New Industry Creation Hatchery Center Tohoku Univ.
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Abe Yuji
Advanced R&d Technology Center Mitsubishi Electric Corporation
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KUROKI Shin-Ichiro
Graduate School of Engineering, Tohoku University
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Inoue Masao
Process Development Dept. Wafer Process Engineering Development Div. Lsi Manufacturing Unit Renesas
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Nemoto Takenao
New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan
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Gu Xun
Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
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Komura Masanori
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 6-6-10 Aoba Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Nemoto Takenao
New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan
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Miyatani Kotaro
Tokyo Electron Technology Development Institute, Sendai 981-3137, Japan
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Kobayashi Yasuo
Tokyo Electron Technology Development Institute, Sendai 981-3137, Japan
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Tomita Yugo
New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan
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Saito Akane
Tokyo Electron Technology Development Institute, Inc., Nirasaki, Yamanashi 407-0175, Japan
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Abe Yuji
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Miyatani Kotaro
Tokyo Electron Technology Development Institute, Inc., Nirasaki, Yamanashi 407-0175, Japan
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Hattori Takeo
New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aoba Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Kuroda Rihito
Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
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Inoue Masao
Process Development Department, Wafer Process Engineering Development Division, LSI Manufacturing Unit, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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OISHI Toshiyuki
Advanced Technology R & D Center, Mitsubishi Electric Corporation
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Oishi Toshiyuki
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Suita Muneyoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Umeda Hiroshi
Process Development Department, Wafer Process Engineering Development Division, LSI Manufacturing Unit, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Gu Xun
Graduate School of Engineering, Tohoku University
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Kawase Kazumasa
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Kawase Kazumasa
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Kobayashi Yasuo
Tokyo Electron Technology Development Institute, Inc., Nirasaki, Yamanashi 407-0175, Japan
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Matsuoka Takaaki
Tokyo Electron Technology Development Institute, Inc., Nirasaki, Yamanashi 407-0175, Japan
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Nozawa Toshihisa
Tokyo Electron Technology Development Institute, Inc., Nirasaki, Yamanashi 407-0175, Japan
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Kuroki Shin-Ichiro
Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
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Tsujikawa Shimpei
Process Development Department, Wafer Process Engineering Development Division, LSI Manufacturing Unit, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Sugawa Shigetoshi
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 6-6-10 Aoba Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Noda Seiji
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Nakai Takafumi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Nakai Takafumi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Uehara Yasushi
Advanced Technology R&D Center, Mitsubishi Electric Corp., 1-1 Tsukaguchi-Honmachi 8-chome,
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Noda Seiji
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
著作論文
- Control of nitrogen profile in radical nitridation of SiO_2 films
- Control of Nitrogen Depth Profile near Silicon Oxynitride/Si(100) Interface Formed by Radical Nitridation
- Control of Nitrogen Depth Profile and Chemical Bonding State in Silicon Oxynitride Films Formed by Radical Nitridation
- Densification of Chemical Vapor Deposition Silicon Dioxide Film Using Ozone Treatment
- Integration Process Development for Improved Compatibility with Organic Non-Porous Ultralow-k Dielectric Fluorocarbon on Advanced Cu Interconnects
- X-ray Photoelectron Spectroscopy Study of the Origin of the Improved Device Performance by a Thin Al Layer Insertion between AlGaN and Schottky Gate on the AlGaN/GaN High-Electron-Mobility Transistor