OISHI Toshiyuki | Advanced Technology R & D Center, Mitsubishi Electric Corporation
スポンサーリンク
概要
関連著者
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Abe Yuji
Advanced R&d Technology Center Mitsubishi Electric Corporation
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OISHI Toshiyuki
Advanced Technology R & D Center, Mitsubishi Electric Corporation
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Tokuda Yasunori
Advanced R&d Technology Center Mitsubishi Electric Corporation
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OISHI Toshiyuki
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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SHIOZAWA Katsuomi
Advanced Technology R & D Center, Mitsubishi Electric Corporation
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Tokuda Y
Mitsubishi Electric Corp. Hyogo Jpn
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Tokuda Yasunori
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Tokuda Yasunori
Central Research Laboratory Mitsubishi Electric Corporation
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Abe Yuji
Advanced Technology R&d Center Mitsubishi Electric Corporation
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SHIOZAWA Katsuomi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Shiozawa Katsuomi
Advanced Technology R&d Center Mitsubishi Electric Corporation
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阿部 良夫
Department Of Materials Science Kitami Institute Of Technology
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Abe Y
Mitsubishi Electric Corp. Hyogo Jpn
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Shiozawa K
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Oishi Toshiyuki
Information Technology R&d Center Mitsubishi Electric Corporation
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Sugihara Kazuyoshi
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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FURUKAWA Akihiko
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Nanjo Takuma
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Suita Muneyoshi
Advanced Technology R&d Center Mitsubishi Electric Corp.
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Furukawa A
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Furukawa Akihiko
Advanced Technology R & D Center Mitsubishi Electric Corporation
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Miura Naruhisa
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Sugihara Kohei
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Sugihara Kohei
Advanced Technology R&d Center Mitsubishi Electric Corporation
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FURUKAWA Taisuke
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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SUGIHARA Kohei
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Maruno Shigemitsu
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Tokuda Yasunori
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Nakahata Takumi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Furukawa Taisuke
Advanced Technology R&D Center, Mitsubishi Electric Co., 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Nakahata Takumi
Advanced Technology R&D Center, Mitsubishi Electric Corporation,
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Miura N
Department Of Materials Science And Technology Graduate School Of Engineering Sciences Kyushu Univer
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MARUNO Shigemitsu
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Aoyagi Yoshinobu
Nanoscience Development And Support Team Riken
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Furukawa T
Sci. Univ. Tokyo Tokyo Jpn
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NAKAHATA Takumi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Abe Yoichi
Department Of Applied Science Tokyo Electrical Engineering College
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MARUNO Shigemitsu
The Institute of Scientific and Industrial Research, Osaka University
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Yoshiara Kiichi
Advanced Technology R&d Center Mitsubishi Electric Corp.
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Tokuda Yasunori
Department Of Bioscience And Biotechnology Faculty Of Engineering Okayama University
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Ishikawa Hiroyasu
Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.
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Nakahata T
Mitsubishi Electric Corp. Hyogo Jpn
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Miura N
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Ozeki Tatsuo
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Murakami Taka-aki
Advanced Technology R&d Center Mitsubishi Electric Corporation
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INOUE Akira
Microwave Device Development Department, Mitsubishi Electric Corporation
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ISHIKAWA Takahide
Microwave Device Development Department, Mitsubishi Electric Corporation
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MATSUDA Yoshio
Microwave Device Development Department, Mitsubishi Electric Corporation
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SUGIHARA Kouhei
Advanced Technology R & D Center, Mitsubishi Electric Corporation
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Nakatsuka Shigenori
Microwave Device Development Department Mitsubishi Electric Corporation
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MAEDA Hiroshi
ULSI Laboratory, Mitsubishi Electric Corporation
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YASUMURA Kenji
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Yasumura Kenji
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Takeuchi Misaichi
Nanoscience Development And Support Team Riken
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Maruno S
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Yagyu Eiji
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Kawase Kazumasa
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Maruno Shigemitsu
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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ABE Yuji
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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ABE Yuji
Advanced Technology R & D Center, Mitsubishi Electric Corporation
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SHIOZAWA Katsuomi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Shiozawa Katsuomi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Abe Yuji
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Abe Yuji
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, Japan
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Abe Yuji
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Nakatsuka Shigenori
Microwave Device Development Department, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Furukawa Takeo
Advanced Technology R&D Center. Mitsubishi Electric Corporation
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Maruno Shigemitsu
Advanced Technology R&D Center. Mitsubishi Electric Corporation
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OISHI Toshiyuki
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Sugihara Kohei
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Oishi Toshiyuki
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Oishi Toshiyuki
Advanced Technology Research and Development Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Oishi Toshiyuki
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, Japan
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Oishi Toshiyuki
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Suita Muneyoshi
Advanced Technology Research and Development Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Suita Muneyoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, Japan
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Suita Muneyoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Miura Naruhisa
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Miura Naruhisa
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, Japan
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Nakahata Takumi
Advanced Technology R&D Center. Mitsubishi Electric Corporation
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Takeuchi Misaichi
Nanoscience Development and Support Team, RIKEN, Wako, Saitama 351-0198, Japan
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Ozeki Tatsuo
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, Japan
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Nanjo Takuma
Advanced Technology Research and Development Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Nanjo Takuma
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, Japan
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YASUMURA Kenji
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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MURAKAMI Taka-aki
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Inoue Akira
Microwave Device Development Department, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Furukawa Taisuke
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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SUGIHARA Kouhei
Advanced Technology R & D Center, Mitsubishi Electric Corporation
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Matsuda Yoshio
Microwave Device Development Department, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Motoya Tsukasa
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Imai Akihumi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Suzuki Yosuke
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
著作論文
- Self-Aligned Pocket Implantation into Elevated Source/Drain MOSFETs for Reduction of Junction Capacitance and Leakage Current
- Advantage of Shallow Trench Isolation over Local Oxidation of Silicon on Alignment Tolerance
- Protection of Field Oxide in Trench Isolation against Contact Hole Etching to Improve Alignment Tolerance
- Noticeable Enhancement of Edge Effect in Short Channel Characteristics of Trench-Isolated MOSFETs
- Anomalous Gate Length Dependence of Threshold Voltage of Trench-Isolated Metal Oxide Semiconductor Field Effect Transistors
- Narrow-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET)Isolated by an Ultra-Fine Trench
- Electrical Characteristics of Ultra-Fine Trench Isolation Fabricated by a New Two-Step Filling Process
- Enhancement of drain current by an AlN spacer layer insertion in AlGaN/GaN high-electron-mobility transistors with Si-ion-implanted source/drain contacts
- First Operation of AlGaN Channel High Electron Mobility Transistors
- Remarkable Effects of Introduction of SiON Materials into Shallow Trench Isolation Fabrication Process on Metal-Oxide-Semiconductor Field-Effect Transistors
- X-ray Photoelectron Spectroscopy Study of the Origin of the Improved Device Performance by a Thin Al Layer Insertion between AlGaN and Schottky Gate on the AlGaN/GaN High-Electron-Mobility Transistor
- A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations
- Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate