Nakahata T | Mitsubishi Electric Corp. Hyogo Jpn

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著作論文

Selective Epitaxial Growth by Ultrahigh-Vacuum Chemical Vapor Deposition with Alternating Gas Supply of Si_2H_6 and Cl_2
Self-Aligned Pocket Implantation into Elevated Source/Drain MOSFETs for Reduction of Junction Capacitance and Leakage Current
Parasitic Resistance Reduction in Deep Submicron Dual-Gate Transistors with Partially Elevated Source/Drain Extension Regions Fabricated by Complementary Metal-Oxide-Semiconductor Technologies
Surface Defect Formation in Epitaxial Si Grown on Boron-Doped Substrates by Ultrahigh Vacuum Chemical Vapor Deposition(Structure and Mechanical and Thermal Properties of Condensed Matter)
Significant Effects of As Ion Implantation on Si-selective Epitaxy by Ultrahigh Vacuum Chemical Vapor Deposition
Si Deposition into Fine Contact Holes by Ultrahigh-Vacuum Chemical Vapor Deposition
A Chemical Mechanism for Determining the Influence of Boron on Silicon Epltaxial Growth : Semiconductors

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