Shiozawa Katsuomi | Advanced Technology R&d Center Mitsubishi Electric Corporation

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著作論文

Self-Aligned Pocket Implantation into Elevated Source/Drain MOSFETs for Reduction of Junction Capacitance and Leakage Current
Advantage of Shallow Trench Isolation over Local Oxidation of Silicon on Alignment Tolerance
Protection of Field Oxide in Trench Isolation against Contact Hole Etching to Improve Alignment Tolerance
Noticeable Enhancement of Edge Effect in Short Channel Characteristics of Trench-Isolated MOSFETs
Anomalous Gate Length Dependence of Threshold Voltage of Trench-Isolated Metal Oxide Semiconductor Field Effect Transistors
Narrow-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET)Isolated by an Ultra-Fine Trench
High Power operation of GaN-based laser diode with high slope efficiency

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