Abe Yuji | Advanced Technology R&d Center Mitsubishi Electric Corporation
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概要
関連著者
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Abe Yuji
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Abe Y
Mitsubishi Electric Corp. Hyogo Jpn
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阿部 良夫
Department Of Materials Science Kitami Institute Of Technology
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阿部 良夫
北見工業大学マテリアル工学科
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Abe Yoshio
Department Of Materials Science Faculty Of Engineering Kitami Institute Of Technology
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佐々木 克孝
Department Of Materials Science Kitami Institute Of Technology
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Kamijyo Masahiro
Department Of Materials Science Faculty Of Engineering Kitami Institute Of Technology
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川村 みどり
Department Of Materials Science Kitami Institute Of Technology
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佐々木 克孝
北見工業大学工学部機能材料工学科
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阿部 良夫
北見工業大学工学部能材料工学科
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ABE Yoshio
Department of Materials Science, Kitami Institute of Technology
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SASAKI Katsutaka
Department of Materials Science, Kitami Institute of Technology
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Abe Yoichi
Department Of Applied Science Tokyo Electrical Engineering College
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Sasaki Katsutaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Tokuda Y
Mitsubishi Electric Corp. Hyogo Jpn
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Tokuda Yasunori
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Tokuda Yasunori
Central Research Laboratory Mitsubishi Electric Corporation
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Tokuda Yasunori
Advanced R&d Technology Center Mitsubishi Electric Corporation
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柳沢 英人
北見工業大学工学部能材料工学科
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柳沢 英人
北見工業大学
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川村 みどり
北見工業大学工学部機能材料工学科
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山根 美佐雄
北見工業大学工学部機能材料工学科
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笹木 敬司
北海道大学電子科学研究所
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Yanagisawa H
Nhk Sci. And Technical Res. Lab. Tokyo Jpn
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Yanagisawa H
Kitami Inst. Technol. Kitami Jpn
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YANAGISAWA Hideto
Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Tec
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OISHI Toshiyuki
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Yanagisawa Hideto
Department Of Electrical And Electronic Engineering Kitami Institute Of Technology
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SHINKAI Satoko
Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology
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Shinkai S
Department Of Materials Science Faculty Of Engineering Kitami Institute Of Technology
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Shinkai Satoko
Research Fellow Of The Japan Society For The Promotion Of Science
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Shinkai Satoko
Department Of Materials Science Faculty Of Engineering Kitami Institute Of Technology
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KAWAMURA Midori
Department of Materials Science, Kitami Institute of Technology
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SHIOZAWA Katsuomi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Shiozawa K
Advanced Technology R&d Center Mitsubishi Electric Corporation
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新海 聡子
詫間電波高専
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Sasaki Kimihiro
Graduate School Of Natural Science And Technology Kanazawa University
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Sasaki Koh
Institute For Materials Research Tohoku University
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野矢 厚
北見工業大学工学部電気電子工学科
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NAKAHATA Takumi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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SUGIHARA Kohei
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Sugihara Kohei
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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MARUNO Shigemitsu
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Sasaki K
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Furukawa T
Sci. Univ. Tokyo Tokyo Jpn
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FURUKAWA Taisuke
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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FURUKAWA Akihiko
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Miura Naruhisa
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Nanjo Takuma
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Maruno S
Advanced Technology R&d Center Mitsubishi Electric Corporation
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大石 直也
北見工業大学工学部機能材料工学科 : (現)大倉電気株式会社
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尾関 雅彦
松尾電機株式会社
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KIMURA Kozo
Optoelectronics Joint Research Laboratory
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Miyake H
Kitami Inst. Technol. Kitami Jpn
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Miyake Hidekazu
Pharmacobioregulation Research Laboratory Taiho Pharmaceutical Co. Ltd.
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Kanamoto K
Mitsubishi Electric Corp. Hyogo Jpn
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Kanamoto Kyozo
Femtosecond Technology Research Association (festa)
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ONISAWA Ken-ichi
Hitachi Research Laboratory, Hitachi, Ltd.
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KAGA Yukinao
Department of Materials Science, .Faculty of Engineering, Kitami Institute of Technology
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SUITA Muneyoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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ABE Yuji
Central Research Laboratory, Mitsubishi Electric Corporation
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MIYAKE Hidekazu
Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology
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Miyake Hidekazu
Department Of Materials Science Faculty Of Engineering Kitami Institute Of Technology
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MARUNO Shigemitsu
The Institute of Scientific and Industrial Research, Osaka University
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Nakahata T
Mitsubishi Electric Corp. Hyogo Jpn
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Miura N
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Kaga Yukinao
Department Of Materials Science .faculty Of Engineering Kitami Institute Of Technology
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NANJO Takuma
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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HARIMA Hiroshi
Department of Electronics and Information Science, Kyoto Institute of Technology
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Abe Hajime
Department of Cardiology, Sakakibara Heart Institute
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渡辺 大輔
東京工業高等専門学校専攻科
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渡邊 大介
東京工業高等専門学校専攻科
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Miura N
Department Of Materials Science And Technology Graduate School Of Engineering Sciences Kyushu Univer
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新海 聡子
日本学術振興会特別研究員(PD)
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田邉 彩
北見工業大学工学部機能材料工学科
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Abe Hajime
Department Of Applied Physics Graduate School Of Engineering Osaka University
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NAKASHIMA Shin-ichi
Department of Applied Physics,Osaka University
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Ohtsuka K
Sanken Electric Co. Ltd. Niiza Jpn
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Ohtsuka Ken-ichi
Central Research Laboratory Mistubishi Electric Corporation
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野矢 厚
北見工業大学電気電子工学科
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Aoyagi Yoshinobu
Nanoscience Development And Support Team Riken
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KATO Kiyohiko
Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology
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KAMIJYO Masahiro
Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology
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YAMANE Misao
Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology
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後藤 智利
北見工業大学工学部機能材料工学科
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OZEKI Tatsuo
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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SUGIMOTO Hiroshi
Central Research Laboratory, Mitsubishi Electric Corporation
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OHISHI Toshiyuki
Central Research Laboratory, Mitsubishi Electric Corporation
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Yamane Misao
Department Of Materials Science Faculty Of Engineering Kitami Institute Of Technology
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尾関 雅彦
北見工業大学
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Sakai Kiyomi
Kansai Advanced Research Center Communications Research Laboratory The Ministry Of Posts And Telecom
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Abe H
Semiconductor Technology Development Group Semiconductor Solutions Network Company Sony Corporation
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Sakai K
宮崎大
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Ono Yoshimasa
Hitachi Research Laboratory Hitachi Ltd.
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Harima H
Department Of Electronics And Information Science Kyoto Institute Of Technology
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Harima Hiroshi
Department Of Applied Physics Osaha University
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Yamane M
Tokyo Inst. Technol. Tokyo Jpn
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Hangyo M
Research Center For Superconductor Photonics Osaka University
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Hangyo Masanori
Department Of Applied Physics Osaka University
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Takeuchi Misaichi
Nanoscience Development And Support Team Riken
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YOSHIDA Naoto
Department of Biochemistry and Applied Biosciences, Faculty of Agriculture, Miyazaki University
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EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
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MAEGAWA Shigeto
ULSI Laboratory, Mitsubishi Electric Corporation
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INUISHI Masahide
ULSI Laboratory, Mitsubishi Electric Corporation
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NISHIMURA Tadashi
ULSI Laboratory, Mitsubishi Electric Corporation
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MAEDA Shigenobu
ULSI Development Center, Mitsubishi Electric Corporation
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EIMORI Takahisa
ULSI Development Center, Mitsubishi Electric Corporation
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INOUE Yasuo
ULSI Development Center, Mitsubishi Electric Corporation
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MIYOSHI Hirokazu
ULSI Laboratory, Mitsubishi Electric Corporation
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ISHIKAWA Takeshi
Department of Pediatrics, Iwate Medical College
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ISHIKAWA Hiroyasu
Research Center for Nano-Device and System, Nagaya Institute of Technology
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三宅 秀和
北見工業大学工学部能材料工学科
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鈴木 崇司
北見工業大学工学部機能材料工学科
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Pan Ci-ling
Department Of Physics Tunghai University
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Taino Mitsuhiko
Kek High Energy Accelerator Research Organization
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Yoshida Naoto
Department Of Biochemistry And Applied Biosciences Faculty Of Agriculture Miyazaki University
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Kanamoto Kyozo
Central Research Laboratory Mitsubishi Electric Corporation
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Kanamoto Kyozo
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Ohtsuka Ken-ichi
Central Research Laboratory Mitsubishi Electric Corporation
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KUROI Takashi
ULSI Development Center, Mitsubishi Electric Corporation
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Kuroki Hiroshi
Materials & Electronic Devices Laboratory Mitsubishi Electric Corporation
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SAYAMA Hirokazu
ULSI Laboratory, Mitsubishi Electric Corporation
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MIYAMARU Fumiaki
Department of Physics, Faculty of Science, Shinshu University
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HANGYO Masanori
Research Center for Superconducting Materials and Electronics, Osaka University
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TAKEUCHI Misaichi
Nanoscience Development and Support Team, RIKEN
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茶畑 嘉仁
北見工業大学
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MIREBA Kazuhiro
Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology
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ONOZUKA Tomotake
Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology
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渡邊 大介
北見工業大学工学部機能材料工学科
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渡辺 大輔
北見工業大学工学部機能材料工学科
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MATSUI Tetsuyuki
Department of Physical Science, Graduate School of Engineering Science, Osaka University
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MATSUI Teruhito
Central Research Laboratory, Mistubishi Electric Corporation
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YAMAKAWA Satoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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伊藤 ひろみ
北見工業大学工学部機能材料工学科
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YOSHIYASU Hajimu
Central Research Laboratory, Mitsubishi Electric Corporation
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KURAMOTO Kazuo
Materials & Electronic Devices Laboratory, Mitsubishi Electric Corporation
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TSUKADA Noriaki
Central Research Laboratory, Mitsubishi Electric Corporation
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Maegawa Shigeto
Ulsi Development Center Mitsubishi Electric Corporation
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SHIRAHATA Masayoshi
ULSI Development Center, Mitsubishi Electric Corporation
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TANI Masahiko
Kansai Advanced Research Center, National Institute of Information and Communications Technology
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SAKAI Kiyomi
Kansai Advanced Research Center, National Institute of Information and Communications Technology
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Matsui Toshiaki
Communication Research Laboratory Ministry Of Posts And Telecommunications
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YAGYU Eiji
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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YOSHIARA Kiichi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Yoshiara Kiichi
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Yoshiara Kiichi
Advanced Technology R&d Center Mitsubishi Electric Corp.
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Miyoshi Hirokazu
Ulsi Laboratory Mitsubishi Electric Corporation
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Onozuka Tomotake
Department Of Materials Science Faculty Of Engineering Kitami Institute Of Technology
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Matsumoto Takuji
Ulsi Development Center Mitsubishi Electric Corporation
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Okumura Yoshihiro
Research Institute Of Electronics Shizuoka University
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Sakai Kiyomi
Kansai Advanced Research Center Communication Research Laboratory
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OKUMURA Yoshinori
ULSI Laboratory, Mitsubishi Electric Corporation
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TAKANO Keisuke
Institute of Laser Engineering, Osaka University
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HANGYO Masanori
Institute of Laser Engineering, Osaka University
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Ota Kazunobu
Ulsi Development Center Mitsubishi Electric Corporation
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TANI Masahiko
Communications Research Laboratory, Kansai Advanced Research Center
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SAKAI Kiyomi
Communications Research Laboratory, Kansai Advanced Research Center
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TOKUDA Yasunori
Semiconductor Research Laboratory, MITSUBISHI Electric Corporation
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KANAMOTO Kyozo
Semiconductor Research Laboratory, MITSUBISHI Electric Corporation
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ABE Yuji
Semiconductor Research Laboratory, MITSUBISHI Electric Corporation
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TSUKADA Noriaki
Semiconductor Research Laboratory, MITSUBISHI Electric Corporation
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Ishikawa Hiroyasu
Research Center For Nano-device And System Nagoya Institute Of Technology
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Inoue A
Microwave Device Development Department Mitsubishi Electric Corporation
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Oda Hidekazu
Ulsi Development Center Mitsubishi Electric Corporation
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Matsui T
Department Of Systems Innovation Graduate School Of Engineering Science Osaka University
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Tani Masahiko
Kansai Advanced Research Center Communication Research Laboratory
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Kuroi T
Ulsi Development Center Mitsubishi Electric Corporation
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Kuroi Takashi
Ulsi Development Center Mitsubishi Electric Corporation
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Murakami Taka-aki
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Pan Ci‐ling
Department Of Physics And Institute Of Photonics Technologies National Tsing-hua University
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KAWABATA Taku
Institute of Laser Engineering, Osaka University
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HSIEH Cho-Fan
Department of Electrophysics, National Chiao Tung University
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AKIYAMA Koichi
Advanced R&D Technology Center, Mitsubishi Electric Corporation
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PAN Ru-Pin
Department of Electrophysics, National Chiao Tung University
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NAKATSUKA Shigenori
Microwave Device Development Department, Mitsubishi Electric Corporation
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INOUE Akira
Microwave Device Development Department, Mitsubishi Electric Corporation
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ISHIKAWA Takahide
Microwave Device Development Department, Mitsubishi Electric Corporation
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MATSUDA Yoshio
Microwave Device Development Department, Mitsubishi Electric Corporation
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NISHIOKA Yasutaka
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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SUGIHARA Kouhei
Advanced Technology R & D Center, Mitsubishi Electric Corporation
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Nakatsuka Shigenori
Microwave Device Development Department Mitsubishi Electric Corporation
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OISHI Toshiyuki
Information Technology R&D Center, Mitsubishi Electric Corporation
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NANJO Takuma
Mitsubishi Electric Corporation, Advanced Technology Research & Development Center
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TAKEUCHI Misaichi
RIKEN, Nanoscience Development and Support Team
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SUITA Muneyoshi
Mitsubishi Electric Corporation, Advanced Technology Research & Development Center
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ABE Yuji
Mitsubishi Electric Corporation, Advanced Technology Research & Development Center
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OISHI Toshiyuki
Mitsubishi Electric Corporation, Advanced Technology Research & Development Center
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TOKUDA Yasunori
Mitsubishi Electric Corporation, Advanced Technology Research & Development Center
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AOYAGI Yoshinobu
Tokyo Institute of Technology, Dept. of Electronics and Applied Physics
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MAEDA Hiroshi
ULSI Laboratory, Mitsubishi Electric Corporation
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Hangyo Masanori
Institute Of Laser Engineering Osaka University
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Hangyo Masanori
Research Center For Superconducting Materials And Electronics Osaka University
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Hangyo Masanori
Department Of Physics Faculty Of Science Kyoto University
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YASUMURA Kenji
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Nishioka Yasutaka
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Yasumura Kenji
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Okumura Y
Minolta Co. Ltd. Osaka Jpn
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Miyoshi Hirokazu
徳島大学医学部
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Akiyama Koichi
Advanced R&d Technology Center Mitsubishi Electric Corporation
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北田 泰裕
北見工業大学工学部機能材料工学科
著作論文
- C-6-3 化学量論的なTaN薄膜の(100)Si上での室温エピタキシャル成長(C-6.電子部品・材料,エレクトロニクス2)
- Ta-Zr合金による陽極酸化膜キャパシタの電気的特性に及ぼす熱処理温度と酸化膜厚低減の影響
- C-6-8 Ta-Zr合金による熱的に安定な高誘電率陽極酸化膜キャパシタの作製
- Al_3Ta陽極酸化膜キャパシタの作製とその耐熱性
- CPM2000-90 NbドープSrTiO_3薄膜の膜質に及ぼすMgO基板表面処理とポストアニールの影響
- CPM2000-83 薄いZrN/Zr2層膜を介在させたAl/ZrN/Zr/Siコンタクト系の熱的安定性
- CPM2000-76 導電性RhO2薄膜の電気特性に及ぼす熱処理の影響
- CPM2000-72 WOx薄膜の形成過程とその電気及び光学特性
- Effects of Sputtering Parameters on the Formation of Single-Oriented (002) Ti Film on Si
- Difference in Thermal Degradation Behavior of ZrO_2 and HfO_2 Anodized Capacitors
- Epitaxial Ir Thin Film on (001) MgO Single Crystal Prepared by Sputtering
- Highly Texrured (100) RuO_2/(001) Ru Multilayers Preparedly by Sputtering
- Electrical Properties of HfO_2 Thin Insulating Film Prepared by Anodic Oxidation
- C-Axis-Oriented Ru Thin Fillns Prepared by Sputtering in Ar and O_2 Gas Mixture : Surfaces, Interfaces, and Films
- Open-Tube Zn Diffusion Method for InGaAsP/InP Heterojunction Bipolar Transistors
- 超高真空系で作製したMo/(100)Si系のシリサイド形成初期過程
- Alメタライゼーション系におけるAl_12Mo/Mo積層膜の拡散バリヤ効果
- (200)TiN高配向膜上への(111)Al高配向成長に及ぼすAl_3Ti中間介在層の影響
- Fe and Al Concentrations in High Resistivity InP Layer Grown by Low-Temperature Liquid Phase Epitaxy
- Realization of Cu(111) Single-Oriented State on SiO_2 by Annealing Cu-Zr Film and the Thermal Stability of Cu-Zr/ZrN/Zr/Si Contact System
- Single-Oriented Growth of(111)Cu Film on Thin ZrN/Zr Bilayered Film for ULSI Metallization
- Study on Preparation Conditions of Single-Oriented(002)Zr Thin Films on n-(001)Si
- 低化成電圧で作製したAl_3Hf陽極酸化膜キャパシタの熱劣化機構
- Al_3Hf金属間化合物の陽極酸化膜による高耐熱, 高信頼性薄膜キャパシタの検討
- Al_3Hf陽極酸化膜キャパシタの電気的特性と耐熱特性
- Drivability Enhancement for AlGaN/GaN High-Electron Mobility Transistors with AlN Spacer Layer Using Si Ion Implantation Doping
- First Operation of AlGaN Channel High Electron Mobility Transistors
- First Operation of AlGaN Channel High Electron Mobility Transistors with Sufficiently Low Resistive Source/Drain Contact formed by Si Ion Implantation
- Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate
- Remarkable Effects of Introduction of SiON Materials into Shallow Trench Isolation Fabrication Process on Metal-Oxide-Semiconductor Field-Effect Transistors
- Characterization of Crystallinity in Low-Temperature-Grown GaAs Layers by Raman Scattering and Time-Resolved Photoreflectance Measurements
- Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films
- Fabrication of Terahertz Planar Metamaterials Using a Super-Fine Ink-Jet Printer
- A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations
- Self-Aligned Pocket Implantation into Elevated Source/Drain MOSFETs for Reduction of Junction Capacitance and Leakage Current
- Parasitic Resistance Reduction in Deep Submicron Dual-Gate Transistors with Partially Elevated Source/Drain Extension Regions Fabricated by Complementary Metal-Oxide-Semiconductor Technologies
- Advantage of Shallow Trench Isolation over Local Oxidation of Silicon on Alignment Tolerance
- Protection of Field Oxide in Trench Isolation against Contact Hole Etching to Improve Alignment Tolerance
- Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices
- Noticeable Enhancement of Edge Effect in Short Channel Characteristics of Trench-Isolated MOSFETs
- Anomalous Gate Length Dependence of Threshold Voltage of Trench-Isolated Metal Oxide Semiconductor Field Effect Transistors
- Narrow-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET)Isolated by an Ultra-Fine Trench
- Electrical Characteristics of Ultra-Fine Trench Isolation Fabricated by a New Two-Step Filling Process
- Room-Temperature Self-Electrooptic Effects of GaAs/AlAs Asymmetric Coupled Quantum Wells
- CPM2000-82 (001)Si上(111)Cu/(111)HfN/(002)Hf三層膜の連続単配向成長に及ぼすHf膜厚の影響
- Al_3Zr金属間化合物膜の陽極酸化とそれを応用した高信頼性薄膜キャパシタの作製
- Alメタライゼーション系へのAl_3Hf/Hf積層膜の拡散バリヤとしての適用
- Al_3Hf金属間化合物膜の結晶化過程と電気的特性
- n-(001)Si上への単配向Hf膜の作製条件の検討
- 反応性スパッタリング法によるRuO_2薄膜の作製とその電気特性
- Al-Si間におけるAl_3Zr/Zr積層膜の拡散バリヤ効果について
- Reliability of Source-to-Drain Non-Uniformly Doped Channel (NUDC)MOSFETs for Sub-Quarter-Micron Region
- Study on Preparation Conditions of High-Quality ZrN Thin Films Using a Low-Temperature Process
- Preparation of Oxygern-Containing Pt and Pt Oxide Thin Films by Reactive Sputtering and Their Characterization
- Formation Process and Electrical Property of RuO_2 Thin Films Prepared by Reactive Sputtering
- Initial Silicide Formation Process of Single Oriented (002) Hf Film on Si and Its Diffusion Barrier Property
- A Study on the Preparation Conditions of Single Oriented (002) Hf Film on n-(001) Si
- Surface Oxidation Behavior of TiN Film Caused by Depositing SrTiO_3 Film
- Application of Al_3Hf/Hf Bilayered Film as a Diffusion Barrier to Al Metallization System of Si Large-Scale Integration
- Preparation of RhO2 Thin Films by Reactive Sputtering and Their Characterizations
- Electrical Properties of Amorphous Rh Oxide Thin Films Prepared by Reactive Sputtering
- Thermal Stability of RuO_2 Thin Films and Effects of Annealing Ambient on Their Reduction Process
- Preparation of PtO and α-PtO_2 Thin Films by Reactive Sputtering and Their Electrical Properties
- 低化成電圧で作製したTa_2N陽極酸化膜キャパシタの耐熱特性
- 低化成電圧で作製したTa_2N陽極酸化膜キャパシタの熱安定性
- A Chemical Mechanism for Determining the Influence of Boron on Silicon Epltaxial Growth : Semiconductors
- CPM2000-71 Ta窒化物のTa-Al化合物膜への代替による薄膜キャパシタの容量低減の抑制効果
- Ta_2N陽極酸化膜キャパシタの耐熱要因と薄膜化の検討
- Ta_2N 陽極酸化膜キャパシタの耐熱性と酸化膜厚
- Effects of Substrate Temperature during Phosphor Layer Deposition on Luminance of SrS:Ce Blue-Green-Emitting Thin-Film Electroluminescent Devices
- Effects of Oxygen in CaS:Eu Active Layers on Emission Properties of Thin Film Electroluminescent Cells
- Electroluminescence in CaO:Eu Thin Film
- Distribution of Free Volume and Dielectric Relaxation due to Segmental Motion of Amorphous Chains in Chlorinated Poly(ethylene)
- Effect of the Distribution of Free Volume on the β Relaxation in Poly : Vinylidene Fluoride
- Mechanical Relaxation of Poly (Vinylidene Fluoride) and Copolymer of Vinylidene Fluoride and Tetrafluoroethylene in α and β Relaxation Regions