OZEKI Tatsuo | Advanced Technology R&D Center, Mitsubishi Electric Corporation

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著作論文

Specular Surface Morphology of Aluminum-Implanted 4H-SiC(0001) by SiH_4-Added Ar Anneal
Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate
Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices
Fabrication Of Full Hign-T_c Superconducting YBa_2Cu_3O Trilayer Junctions Using a Polishing Technique
YBaCuO/PrBaCuO/YBaCuO Trilayer Junctions on Vicinal Substrates : Superconductors
Improvement in Ba_K_xBiO_3 Grain Boundary Junctions by Ar^+ Beam Irradiation
Significant Improvement in Ba_K_xBiO_3 Grain Boundary Junctions on MgO Bicrystal Substrates by Minimal BaBiO_3 Sputtering

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