Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate
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概要
- 論文の詳細を見る
- 2004-04-30
著者
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阿部 良夫
Department Of Materials Science Kitami Institute Of Technology
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EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
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ISHIKAWA Hiroyasu
Research Center for Nano-Device and System, Nagaya Institute of Technology
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Abe Yuji
Advanced Technology R&d Center Mitsubishi Electric Corporation
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OZEKI Tatsuo
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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SUITA Muneyoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Miura Naruhisa
Advanced Technology R&d Center Mitsubishi Electric Corporation
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OISHI Toshiyuki
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Ishikawa Hiroyasu
Research Center For Nano-device And System Nagoya Institute Of Technology
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Inoue A
Microwave Device Development Department Mitsubishi Electric Corporation
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NANJO Takuma
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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NAKATSUKA Shigenori
Microwave Device Development Department, Mitsubishi Electric Corporation
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INOUE Akira
Microwave Device Development Department, Mitsubishi Electric Corporation
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ISHIKAWA Takahide
Microwave Device Development Department, Mitsubishi Electric Corporation
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MATSUDA Yoshio
Microwave Device Development Department, Mitsubishi Electric Corporation
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Nanjo Takuma
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Nakatsuka Shigenori
Microwave Device Development Department Mitsubishi Electric Corporation
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