First Operation of AlGaN Channel High Electron Mobility Transistors with Sufficiently Low Resistive Source/Drain Contact formed by Si Ion Implantation
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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阿部 良夫
Department Of Materials Science Kitami Institute Of Technology
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Tokuda Y
Mitsubishi Electric Corp. Hyogo Jpn
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Tokuda Yasunori
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Tokuda Yasunori
Central Research Laboratory Mitsubishi Electric Corporation
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Abe Yuji
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Abe Y
Mitsubishi Electric Corp. Hyogo Jpn
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Aoyagi Yoshinobu
Nanoscience Development And Support Team Riken
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Abe Yoichi
Department Of Applied Science Tokyo Electrical Engineering College
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Tokuda Yasunori
Advanced R&d Technology Center Mitsubishi Electric Corporation
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Nanjo Takuma
Advanced Technology R&d Center Mitsubishi Electric Corporation
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NANJO Takuma
Mitsubishi Electric Corporation, Advanced Technology Research & Development Center
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TAKEUCHI Misaichi
RIKEN, Nanoscience Development and Support Team
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SUITA Muneyoshi
Mitsubishi Electric Corporation, Advanced Technology Research & Development Center
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ABE Yuji
Mitsubishi Electric Corporation, Advanced Technology Research & Development Center
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OISHI Toshiyuki
Mitsubishi Electric Corporation, Advanced Technology Research & Development Center
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TOKUDA Yasunori
Mitsubishi Electric Corporation, Advanced Technology Research & Development Center
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AOYAGI Yoshinobu
Tokyo Institute of Technology, Dept. of Electronics and Applied Physics
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Takeuchi Misaichi
Nanoscience Development And Support Team Riken
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Oishi Toshiyuki
Information Technology R&d Center Mitsubishi Electric Corporation
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Suita Muneyoshi
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Aoyagi Yoshinobu
Tokyo Institute Of Technology Dept. Of Electronics And Applied Physics
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Takeuchi Misaichi
Riken Nanoscience Development And Support Team
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