Improvement of Al-Polar AlN Layer Quality by Three-Stage Flow-Modulation Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 2008-02-25
著者
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Aoyagi Yoshinobu
Nanoscience Development And Support Team Riken
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TAKEUCHI Misaichi
Nanoscience Development and Support Team, RIKEN
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OOISHI Shin
Department of Electronics and Applied Physics, Tokyo Institute of Technology
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OHTSUKA Takumi
Department of Electronics and Applied Physics, Tokyo Institute of Technology
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MAEGAWA Tomohiro
Department of Electronics and Applied Physics, Tokyo Institute of Technology
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KOYAMA Takahiro
Center for Advanced Nitride Technology (CANTech), Institute of Multidisciplinary Research for Advanc
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CHICHIBU Shigefusa
Center for Advanced Nitride Technology (CANTech), Institute of Multidisciplinary Research for Advanc
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Ooishi Shin
Department Of Electronics And Applied Physics Tokyo Institute Of Technology
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Ohtsuka Takumi
Department Of Electronics And Applied Physics Tokyo Institute Of Technology
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Koyama Takahiro
Center For Advanced Nitride Technology (cantech) Institute Of Multidisciplinary Research For Advance
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Maegawa Tomohiro
Department Of Electronics And Applied Physics Tokyo Institute Of Technology
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Chichibu Shigefusa
Tohoku Univ. Sendai Jpn
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Chichibu Shigefusa
Center For Advanced Nitride Technology (cantech) Institute Of Multidisciplinary Research For Advance
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Takeuchi Misaichi
Nanoscience Development And Support Team Riken
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Ohtsuka Takumi
Department of Applied Physics, Graduate School of Engineering, Yokohama National University, Yokohama 240-8501, Japan
関連論文
- Improvement of Al-Polar AlN Layer Quality by Three-Stage Flow-Modulation Metalorganic Chemical Vapor Deposition
- Plasma-assisted Molecular Beam Epitaxy of High Optical Quality MgZnO Films on Zn-polar ZnO Substrates
- Blue Light-Emitting Diode Based on ZnO
- First Operation of AlGaN Channel High Electron Mobility Transistors
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- Helicon-Wave-Excited-Plasma Sputtering as an Expandable Epitaxy Method for Planar Semiconductor Thin Films
- Structural, Optical, and Homoepitaxial Studies on the Bulk GaN Single Crystals Spontaneously Nucleated by the Na-Flux Method
- Two-Dimensional Near-Field Optical Spectroscopy in Magnetic Fields up to 4T
- First Operation of AlGaN Channel High Electron Mobility Transistors
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