Takeuchi Misaichi | Nanoscience Development And Support Team Riken
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概要
関連著者
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Aoyagi Yoshinobu
Nanoscience Development And Support Team Riken
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Takeuchi Misaichi
Nanoscience Development And Support Team Riken
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Nanjo Takuma
Advanced Technology R&d Center Mitsubishi Electric Corporation
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阿部 良夫
Department Of Materials Science Kitami Institute Of Technology
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Tokuda Y
Mitsubishi Electric Corp. Hyogo Jpn
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Tokuda Yasunori
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Tokuda Yasunori
Central Research Laboratory Mitsubishi Electric Corporation
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Abe Yuji
Advanced Technology R&d Center Mitsubishi Electric Corporation
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TAKEUCHI Misaichi
Nanoscience Development and Support Team, RIKEN
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Tokuda Yasunori
Advanced R&d Technology Center Mitsubishi Electric Corporation
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Abe Y
Mitsubishi Electric Corp. Hyogo Jpn
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OOISHI Shin
Department of Electronics and Applied Physics, Tokyo Institute of Technology
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OHTSUKA Takumi
Department of Electronics and Applied Physics, Tokyo Institute of Technology
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MAEGAWA Tomohiro
Department of Electronics and Applied Physics, Tokyo Institute of Technology
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KOYAMA Takahiro
Center for Advanced Nitride Technology (CANTech), Institute of Multidisciplinary Research for Advanc
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CHICHIBU Shigefusa
Center for Advanced Nitride Technology (CANTech), Institute of Multidisciplinary Research for Advanc
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SUITA Muneyoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Abe Yoichi
Department Of Applied Science Tokyo Electrical Engineering College
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Ooishi Shin
Department Of Electronics And Applied Physics Tokyo Institute Of Technology
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Ohtsuka Takumi
Department Of Electronics And Applied Physics Tokyo Institute Of Technology
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Koyama Takahiro
Center For Advanced Nitride Technology (cantech) Institute Of Multidisciplinary Research For Advance
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OISHI Toshiyuki
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Maegawa Tomohiro
Department Of Electronics And Applied Physics Tokyo Institute Of Technology
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NANJO Takuma
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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NANJO Takuma
Mitsubishi Electric Corporation, Advanced Technology Research & Development Center
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TAKEUCHI Misaichi
RIKEN, Nanoscience Development and Support Team
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SUITA Muneyoshi
Mitsubishi Electric Corporation, Advanced Technology Research & Development Center
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ABE Yuji
Mitsubishi Electric Corporation, Advanced Technology Research & Development Center
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OISHI Toshiyuki
Mitsubishi Electric Corporation, Advanced Technology Research & Development Center
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TOKUDA Yasunori
Mitsubishi Electric Corporation, Advanced Technology Research & Development Center
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AOYAGI Yoshinobu
Tokyo Institute of Technology, Dept. of Electronics and Applied Physics
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Chichibu Shigefusa
Tohoku Univ. Sendai Jpn
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Chichibu Shigefusa
Center For Advanced Nitride Technology (cantech) Institute Of Multidisciplinary Research For Advance
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Oishi Toshiyuki
Information Technology R&d Center Mitsubishi Electric Corporation
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Suita Muneyoshi
Advanced Technology R&d Center Mitsubishi Electric Corp.
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Suita Muneyoshi
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Aoyagi Yoshinobu
Tokyo Institute Of Technology Dept. Of Electronics And Applied Physics
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Abe Yuji
Advanced R&d Technology Center Mitsubishi Electric Corporation
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Takeuchi Misaichi
Riken Nanoscience Development And Support Team
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OISHI Toshiyuki
Advanced Technology R & D Center, Mitsubishi Electric Corporation
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Oishi Toshiyuki
Advanced Technology Research and Development Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Suita Muneyoshi
Advanced Technology Research and Development Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Takeuchi Misaichi
Nanoscience Development and Support Team, RIKEN, Wako, Saitama 351-0198, Japan
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Nanjo Takuma
Advanced Technology Research and Development Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Ohtsuka Takumi
Department of Applied Physics, Graduate School of Engineering, Yokohama National University, Yokohama 240-8501, Japan
著作論文
- Improvement of Al-Polar AlN Layer Quality by Three-Stage Flow-Modulation Metalorganic Chemical Vapor Deposition
- First Operation of AlGaN Channel High Electron Mobility Transistors
- First Operation of AlGaN Channel High Electron Mobility Transistors with Sufficiently Low Resistive Source/Drain Contact formed by Si Ion Implantation
- First Operation of AlGaN Channel High Electron Mobility Transistors