Suita Muneyoshi | Advanced Technology R&d Center Mitsubishi Electric Corp.

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概要

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著作論文

Electrical Characterization of Au/p-ZnSe Structure
Drivability Enhancement for AlGaN/GaN High-Electron Mobility Transistors with AlN Spacer Layer Using Si Ion Implantation Doping
Alignment Mark Optimization to Reduce Tool- and Wafer-Induced Shift for XRA-1000
Critical Dimension Control in Synchrotron Radiation Lithography Using a Negative-Tone Chemical Amplification Resist
Mechanisms of X-Ray Radiation-Induced Damage in (Ba, Sr)TiO_3 Capacitors
Mechanisms of Synchrotron X-Ray Irradiation-Induced Damage in (Ba, Sr)TiO_3 Capacitors
Enhancement of drain current by an AlN spacer layer insertion in AlGaN/GaN high-electron-mobility transistors with Si-ion-implanted source/drain contacts
Critical Dimension Control in Synchrotron Radiation Lithography Using a Negative-Tone Chemical Amplification Resist
First Operation of AlGaN Channel High Electron Mobility Transistors
X-ray Photoelectron Spectroscopy Study of the Origin of the Improved Device Performance by a Thin Al Layer Insertion between AlGaN and Schottky Gate on the AlGaN/GaN High-Electron-Mobility Transistor
Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate

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