Isu T | Semiconductor Research Laboratory Mitsubishi Electric Corporation

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著作論文

Laser-Induced Enhancement of Electron-Tunneling via an Excited State in an Asymmetric Coupled-Quantum-Well
Electron Localization due to Symmetry Breaking in Nonlinear Coupled-Quantum Systems
ac Field-Induced Localization of an Electron in a Double-Well Quantum Structure
Electrical Characterization of Au/p-ZnSe Structure
Gas Source Molecular Beam Epitaxial Growth of ZnSe Using Metal Zn and H_2Se
Blue Light Emitting Laser Diodes Based on ZnSe/ZnCdSe Structure Grown by Gas Source Molecular Beam Epitaxy
Active-Nitrogen-Doped P-Type ZnSe Grown by Gas-Source Molecular Beam Epitaxy for Blue-Light-Emitting Devices
A Design Consideration of Gain-Switching Semiconductor Lasers
Real-Time Observations of Appearance of Crosshatched Pattern during Molecular Beam Epitaxy of Compressive InGaAs on InP
Lateral Metalorganic Molecular Beam Epitaxy of GaAs on Patterned (111)B Substrates
A New Method for Atomic-Layer-Controlled Molecular Beam Epitaxy of GaAs Exploiting the Desorption of the Excess Ga Atoms
The Mechanism of Self-Limiting Growth of Atomic Layer Epitaxy of GaAs by Metalorganic Molecular Beam Epitaxy Using Trimethylgallium and Arsine
Desorption of the Excess Gallium Atoms at the Surface of Gallium Arsenide and Application to Atomic Layer Epitaxy
Real-Time Observation of GaAs (001) Surfaces During Molecular Beam Epitaxy by Scanning Microprobe Reflection High Energy Electron Diffraction : Surfaces, Interfaces and Films

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