Lateral Metalorganic Molecular Beam Epitaxy of GaAs on Patterned (111)B Substrates
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-12-30
著者
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Isu T
Mitsubishi Electric Corp. Amagasaki‐shi Jpn
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Isu T
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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Isu Toshiro
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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Isu Toshiro
Optoelectronics Technology Research Laboratory
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Isu Toshiro
Central Research Laboratory Mitsubishi Electric Corporation
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GOTO Shigeo
Central Research Laboratory, Hitachi Ltd.
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Nomura Yoshinori
Central Research Laboratory Mitsubishi Electric Corporation
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Morishita Yoshitaka
Optoelectronics Technology Research Laboratory
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NOMURA Yasuhiko
Optoelectronics Technology Research Laboratory
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KATAYAMA Yoshifumi
Optoelectronics Technology Research Laboratory
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Goto S
Central Research Laboratory Hitachi Ltd.
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Katayama Y
Murata Manufacturing Co. Ltd.
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GOTO Sigeo
Optoelectronics Technology Research Laboratory
関連論文
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- Gas Source Molecular Beam Epitaxial Growth of ZnSe Using Metal Zn and H_2Se
- Blue Light Emitting Laser Diodes Based on ZnSe/ZnCdSe Structure Grown by Gas Source Molecular Beam Epitaxy
- Active-Nitrogen-Doped P-Type ZnSe Grown by Gas-Source Molecular Beam Epitaxy for Blue-Light-Emitting Devices
- Role of Carbon and Hydrogen in Reactive Ion Etching of InP by Gas Mixture of Ethane and Hydrogen
- Growth Behavior and Mechanism of Alkyl-Desorption-Limited Epitaxial Growth of GaAs on Exactly Oriented and Vicinal Substrates
- Mechanism of Multiatomic Step Formation durirng Metalorganic Chemical Vapor deposition Growth of GaAs on (001) Vicinal Surface Studied by Atomic Force Microscopy
- Morphological Evolution of the InGaN-Based Quantum Well Surface due to a Reduced Density of Threading Dislocations in the Underlying GaN through Higher Growth Pressure
- Optical Properties of GaN Thin Films on Sapphire Substrates Characterized by Variable-Angle Spectroscopic Ellipsometry
- Electron Wave Transfer in Coupled Quantum Wires and Its Control by Externally Applied Electric Field
- Surface Cleaning of Si-Doped/Undoped GaAs Substrates
- Real-Time Observations on the Cleaning Process of Patterned GaAs Substrates
- Characterization of Oxidized GaAs (001) Surfaces Using Temperature Programed Desorption and X-Ray Photoelectron Speetroscopy
- Fabrication and Characterization of (Sr, Ba)Nb_2O_6 Thin Films by Pulsed Laser Deposition
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- Molecular Beam Epitaxy of GaAs/AlAs on Mesa Stripes along the [001] Direction for Quantum-Wire Fabrication
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- Selective Area Epitaxial Growth of GaAs Using Metal Gallium and Trisdimethylaminoarsine
- Etching of Al_xGa_As (0≤x≤1) by Trisdimethylaminoarsine
- Laser-Induced Enhancement of Electron-Tunneling via an Excited State in an Asymmetric Coupled-Quantum-Well
- Substrate Misorientation Effect on Be Transport during MBE Growth of GaAs