Morphological Evolution of the InGaN-Based Quantum Well Surface due to a Reduced Density of Threading Dislocations in the Underlying GaN through Higher Growth Pressure
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-04-15
著者
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Yang Tao
Department Of Electrical And Electronic Engineering The University Of Tokushinna
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Yang Tao
Central Research Laboratory Hitachi Ltd.
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Uchida K
Fukui Inst. Technol. Fukui Jpn
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Uchida Kenji
Central Research Laboratory Hitachi Ltd.
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KASAI Jun-ichi
Central Research Laboratory, Hitachi, Ltd.
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MISHIMA Tomoyoshi
Central Research Laboratory, Hitachi, Ltd.
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GOTOH Jun
Central Research Laboratory, Hitachi Ltd.
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GOTO Shigeo
Central Research Laboratory, Hitachi Ltd.
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NIWA Atsuko
Central Research Laboratory, Hitachi Ltd.
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Goto S
Central Research Laboratory Hitachi Ltd.
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Gotoh Jun
Central Research Laboratory Hitachi Ltd.
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Gotoh Jun
Central Research Lab.hitachi Ltd.
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Kasai Jun-ichi
Central Research Laboratory Hitachi Ltd.
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Niwa Atsuko
Central Research Laboratory Hitachi Ltd.
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Uchida Kenji
Central R&d Laboratory Kobayashi Pharmaceutical Co. Ltd.
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Mishima Tomoyoshi
Central Research Lab. Hitachi Ltd.
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MISHIMA Tomoyoshi
Central Research Laboratory, Hitachi Ltd.
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GOTOH Jun
Central Research Lab. Hitachi Ltd.
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