Improvement of Photoluminescence Properties of ZnSe Film Grown by Hydrogen Radical-Enhanced Chemical Vapor Deposition Using Alternate Gas Supply and Substrate Bias Application
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概要
- 論文の詳細を見る
High-quality ZnSe films were successfully grown on GaAs (100) at low temperatures, 200℃ or lower, by hydrogen radical-enhanced chemical vapor deposition (HRCVD). Defects were markedly eliminated by the following factors: selection of source materials, avoidance of ion bombardment, and suppression of formation of adducts by alternate gas supply.
- 社団法人応用物理学会の論文
- 1991-07-15
著者
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SHIMIZU Isamu
The Graduate School at Nagatsuta
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HANNA Jun-ichi
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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SHIRAI Hajime
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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Shimizu I
Osaka Univ. Osaka Jpn
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GOTOH Jun
Central Research Laboratory, Hitachi Ltd.
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Shimizu I
The Graduate School At Nagatsuta Tokyo Institute Of Technology
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Shimizu Isamu
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Gotoh Jun
Central Research Laboratory Hitachi Ltd.
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Shirai Hajime
The Graduate School At Nagatsuta Tokyo Institute Of Technology:(present Address) Saitama University
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Hanna J
Tokyo Inst. Technol. Yokohama Jpn
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GOTOH Jun
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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