Photosensitive Systems Involving Photoconduction and Photochromism
スポンサーリンク
概要
著者
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Shimizu Isamu
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Nakayama Takao
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Kokado Hiroshi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Inoue Eiichi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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KOKADO Hiroshi
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
関連論文
- Richardson-Schottky Type Photoinjection Current from Photoconductor into Insulation Liquid
- Effects of Ion-Beam-Irradiation on Morphology and Densification of CeO_2 Films Prepared by Ion-Beam-Assisted Deposition
- Mechanical Property of Dissimilar Material Nanocomposites Prepared by Ion Beam Assisted Sputtering Process(Physics, Processes, Instruments & Measurements)
- Optimization of Transparent Conductive Oxide for Improved Resistance to Reactive and/or High Temperature Optoelectronic Device Processing
- Control of Orientation for Polycrystalline Silicon Thin Films Fabricated from Fluorinated Source Gas by Microwave Plasma Enhanced Chemical Vapor Deposition
- Fabrication of Polycrystalline Silicon Films from SiF_4/H_2/SiH_4 Gas Mixture Using Very High Frequency Plasma Enhanced Chemical Vapor Deposition with In Situ Plasma Diagnostics and Their Structural Properties.
- Comparison of Microstructure and Crystal Structure of Polycrystalline Silicon Exhibiting Varied Textures Fabricated by Microwave and Very High Frequency Plasma Enhanced Chemical Vapor Deposition and Their Transport Properties
- Deposited Cr_2O_3 as a Barrier in a Solid State WO_3 Electrochromic Cell
- Anomalous Photoresponse of Tetrazolium-ZnO System
- Photoinjection Barriers at Chalcogenide/Se Interfaces
- Electrochromic Display Device Based on Amorphous WO_3 and Solid Proton Conductor
- Influence of the Localized Structural Transformation of As_2S_3 on the Photo-Doping Rate of Ag
- Charging Characteristics of a Copolymer of Vinylidene Fluoride and Tetrafluoroethylene
- Mechanism of Memory Effect in an Organic Photoreceptor Coated on an Organic Polymer Electrode
- Role of Space Charge in a Memory-Type Organic Photoreceptor Coated on an Organic Polymer Electrode
- Preparation of High Quality Polypyrrole Films : Chemistry (incl. physical process)
- Fabrication of Solar Cells Having SiH_2Cl_2 Based I-Layer Materials
- Role of Seed Crystal Layer in Two-Step-Growth Procedure for Low Temperature Growth of Polycrystalline Silicon Thin Film from SiF_4 by a Remote-Type Microwave Plasma Enhanced Chemieal Vapor Deposition
- Preparation and Properties of (ZnS)_3(ZnSe)_ Ordered Alloys Fabricated by Plasma-Enhanced Low-Temperature Growth Technique ( Plasma Processing)
- Structures and Properties of (ZnS)_n(ZnSe)_m(n=1-4) Ordered Alloys Grown by Atomic Layer Epitaxy
- Si Epitaxy below 400℃ from Fluorinated Precursors SiF_nH_m (n + m ≤ 3) under In Situ Observation with Ellipsometry
- Structure of Polycrystalline Silicon Thin Film Fabricated from Fluorinated Precursors by Layer-by-Layer Technique
- Structural and Electrical Properties of n-Type Poly-Si Films Prepared by Layer-by-Layer Technique
- In Situ Ellipsometric Observations of the Growth of Silicon Thin Films from Fluorinated Precursors, SiF_nH_m(n+m
- Preparation of High-Quality Microcrystalline Silicon from Fluorinated Precursors by a Layer-by-Layer Technique
- Study on Chemical Reactions on the Growing Surface to Control the Structures of μc-Silicon from Fluorinated Precursors
- Improvement of Photoluminescence Properties of ZnSe Film Grown by Hydrogen Radical-Enhanced Chemical Vapor Deposition Using Alternate Gas Supply and Substrate Bias Application
- Very Stable a-Si:H Prepared by "Chemical Annealing"
- Role of Atomic Hydrogen During Growth of Hydrogenated Amorphous Silicon in the "Chemical Annealirng"
- Narrow Band-Gap a-Si:H with Improved Minority Carrier-Transport Prepared by Chemical Annealing
- Improvement in Open-Circuit Memory, Current Efficiency and Response Speed of an Amorphous WO_3 Solid-State Electrochromic Device
- Preparations of a-Si: H from Higher Silanes (Si_nH_) with the High Growth Rate
- Application of Amorphous Silicon to WO_3 Photoelectrochromic Device
- Solid-State Electrochromic Device Consisting of Amorphous WO_3 and Various Thin Oxide Layers
- Coloration Process in Solid-State Eleetrochromic Device
- A Solid Electrochromic Cell Using Lu-Diphthalocyanine and Lead Fluoride
- Selectively Doped n-GaInP/GaAs Heterostructures Grown by MOCVD
- A New Method for Producing Low-electrical-resistivity Patterns in Insulating Chalcogenide Glasses
- Photo-Induced Memory Effect in Polyaniline/Polyvinylcarbazole Organic System
- Dye-sensitized Photolysis of Diazonium Compounds in the Presence of Thioacetamide
- The Optical and Electrical Properties of Metal Photodoped Chalcogenide Glasses
- The Photo-Erasable Memory Switching Effect of Ag Photo-Doped Chalcogenide Glasses
- Photoelectrical Response of Hydrochloric Salt of Photospiran
- Photosensitive Systems Involving Photoconduction and Photochromism
- The Dye-sensitized Photolysis of Hexamethyleneammonium Hexamethylenedithiocarbamate by Thiazine Dyes
- Large Illumination Memory in an Organic Photoreceptor Coated on an Organic Metal Electrode