Role of Atomic Hydrogen During Growth of Hydrogenated Amorphous Silicon in the "Chemical Annealirng"
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概要
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In our previous paper, we proposed a novel preparation technique termed "Chemical annealing" to make a rigid and stable Si-network. In this letter, with the aim of the understanding the role of atomic hydrogen on the growing surface, systematic studies were made out the concentrations of H and D for the chemicaliy annealed films made by SiH_4 and atomic deuterium system as a function of the deposition time in one cycle, the annealing time and the substrate temperalure. In the chemically annealed film, the structural relaxation is thermally activated with an activation energy of 0.3 eV. The role of atomic hydrogen is the creation of dangling bonds in the top surface for the enhancement of a cross linking reaction; passivation of dangling bond and break of weak Si-Si bonds for the rearrangement of Si-network. In comparison with the post-deutrization results, the role of atomic hydrogen in the "Chemical annealing" is discussed.
- 社団法人応用物理学会の論文
- 1991-04-15
著者
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Shimizu I
Osaka Univ. Osaka Jpn
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Shimizu I
The Graduate School At Nagatsuta Tokyo Institute Of Technology
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Shimizu Isamu
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Hanna J
Tokyo Inst. Technol. Yokohama Jpn
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Hanna Jun-ichi
Tokyo Institute Of Technology Imaging Science And Engineering Laboratory
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Shimizu Isamu
Tokyo Institute of Technology
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Shirai Hajime
Tokyo Institute Of Technology The Graduate School At Nagatsuta:(present Address) The Faculty Of Engi
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