Coloration Process in Solid-State Eleetrochromic Device
スポンサーリンク
概要
- 論文の詳細を見る
Measurements of the transient shape of an electric current were carried out to obtain information about the coloration mechanism in an amorphous WO_3(a-WO_3) solid-state electrochromic device (ECD). The time dependence of the current was classified into three regions. (1) The absorption current associated with the dielectric relaxation of the oxide layers and the subsequent injection current from the electrodes to the bulk. (2) The current caused by the electrochemical reaction (coloration) at the interface between the a-WO_3 and the dielectrics. (3) The current modulated by the electromotive force arising from the colored species in both a-WO_3 and dielectrics. The coloration process in this solid-state ECD was investigated in connection with the response speed using kinetic analysis.
- 社団法人応用物理学会の論文
- 1981-03-05
著者
-
Shizukuishi Makoto
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology:(present Address) Teserch L
-
Shimizu Isamu
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
-
Inoue Eiichi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
-
SHIMIZU Isamu
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
関連論文
- Richardson-Schottky Type Photoinjection Current from Photoconductor into Insulation Liquid
- Effects of Ion-Beam-Irradiation on Morphology and Densification of CeO_2 Films Prepared by Ion-Beam-Assisted Deposition
- Mechanical Property of Dissimilar Material Nanocomposites Prepared by Ion Beam Assisted Sputtering Process(Physics, Processes, Instruments & Measurements)
- Optimization of Transparent Conductive Oxide for Improved Resistance to Reactive and/or High Temperature Optoelectronic Device Processing
- Control of Orientation for Polycrystalline Silicon Thin Films Fabricated from Fluorinated Source Gas by Microwave Plasma Enhanced Chemical Vapor Deposition
- Fabrication of Polycrystalline Silicon Films from SiF_4/H_2/SiH_4 Gas Mixture Using Very High Frequency Plasma Enhanced Chemical Vapor Deposition with In Situ Plasma Diagnostics and Their Structural Properties.
- Comparison of Microstructure and Crystal Structure of Polycrystalline Silicon Exhibiting Varied Textures Fabricated by Microwave and Very High Frequency Plasma Enhanced Chemical Vapor Deposition and Their Transport Properties
- Deposited Cr_2O_3 as a Barrier in a Solid State WO_3 Electrochromic Cell
- Anomalous Photoresponse of Tetrazolium-ZnO System
- Photoinjection Barriers at Chalcogenide/Se Interfaces
- Electrochromic Display Device Based on Amorphous WO_3 and Solid Proton Conductor
- Influence of the Localized Structural Transformation of As_2S_3 on the Photo-Doping Rate of Ag
- Fabrication of Solar Cells Having SiH_2Cl_2 Based I-Layer Materials
- Role of Seed Crystal Layer in Two-Step-Growth Procedure for Low Temperature Growth of Polycrystalline Silicon Thin Film from SiF_4 by a Remote-Type Microwave Plasma Enhanced Chemieal Vapor Deposition
- Preparation and Properties of (ZnS)_3(ZnSe)_ Ordered Alloys Fabricated by Plasma-Enhanced Low-Temperature Growth Technique ( Plasma Processing)
- Structures and Properties of (ZnS)_n(ZnSe)_m(n=1-4) Ordered Alloys Grown by Atomic Layer Epitaxy
- Si Epitaxy below 400℃ from Fluorinated Precursors SiF_nH_m (n + m ≤ 3) under In Situ Observation with Ellipsometry
- Structure of Polycrystalline Silicon Thin Film Fabricated from Fluorinated Precursors by Layer-by-Layer Technique
- Structural and Electrical Properties of n-Type Poly-Si Films Prepared by Layer-by-Layer Technique
- In Situ Ellipsometric Observations of the Growth of Silicon Thin Films from Fluorinated Precursors, SiF_nH_m(n+m
- Preparation of High-Quality Microcrystalline Silicon from Fluorinated Precursors by a Layer-by-Layer Technique
- Study on Chemical Reactions on the Growing Surface to Control the Structures of μc-Silicon from Fluorinated Precursors
- Improvement of Photoluminescence Properties of ZnSe Film Grown by Hydrogen Radical-Enhanced Chemical Vapor Deposition Using Alternate Gas Supply and Substrate Bias Application
- Very Stable a-Si:H Prepared by "Chemical Annealing"
- Role of Atomic Hydrogen During Growth of Hydrogenated Amorphous Silicon in the "Chemical Annealirng"
- Narrow Band-Gap a-Si:H with Improved Minority Carrier-Transport Prepared by Chemical Annealing
- Improvement in Open-Circuit Memory, Current Efficiency and Response Speed of an Amorphous WO_3 Solid-State Electrochromic Device
- Preparations of a-Si: H from Higher Silanes (Si_nH_) with the High Growth Rate
- Application of Amorphous Silicon to WO_3 Photoelectrochromic Device
- Solid-State Electrochromic Device Consisting of Amorphous WO_3 and Various Thin Oxide Layers
- Coloration Process in Solid-State Eleetrochromic Device
- A New Method for Producing Low-electrical-resistivity Patterns in Insulating Chalcogenide Glasses
- Dye-sensitized Photolysis of Diazonium Compounds in the Presence of Thioacetamide
- The Optical and Electrical Properties of Metal Photodoped Chalcogenide Glasses
- The Photo-Erasable Memory Switching Effect of Ag Photo-Doped Chalcogenide Glasses
- Photoelectrical Response of Hydrochloric Salt of Photospiran
- Photosensitive Systems Involving Photoconduction and Photochromism
- The Dye-sensitized Photolysis of Hexamethyleneammonium Hexamethylenedithiocarbamate by Thiazine Dyes