Si Epitaxy below 400℃ from Fluorinated Precursors SiF_nH_m (n + m ≤ 3) under In Situ Observation with Ellipsometry

概要

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A systematic study of Si epitaxy below 400℃ was performed under in situ observation with ellipsometry. From the fluorinated precursors SiF_nH_m (m + n 〓 3), epitaxial films were fabricated on (100)-oriented Si substrates in the temperature range from 260 to 400℃. According to in situ ellipsometric observation, a highly ordered crystal-line layer over 500 nm thick was grown on a partially fluctuating initial layer 8 nm thick. On the other hand, epitaxial growth was limited to within 50 nm thick on both (110)-and (111)-oriented substrates. Polycrystalline Si with columnar texture was finally grown with increasing thickness on these substrates. In situ ellipsometry is very useful for monitoring crystalline growth in chemical vapor deposition (CVD) techniques.
社団法人応用物理学会の論文
1994-02-15