Amplification of Photoconductive Gain with Space Charge Doping nini Multilayered Structure
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概要
- 論文の詳細を見る
Optoelectrical properties of a-Si:H(F) multilayers consisting of alternating intrinsic and phosphorus doped layers (nini structure) have been investigated as a function of sublayer thickness by steady state and transient photocurrent measurements. The modulation of the band potential by space charge doping leads to high photoconductivity of the order 10^<-3> S/cm under an illumination of 10^<14> photons/cm^2s, while maintaining a dark conductivity as low as that of 10^<-10>S/cm. A high photoconductive gain above 10 is obtained for the reverse-biased Schottky diode by controlling the ratio of its thickness and doping level.
- 社団法人応用物理学会の論文
- 1987-12-20
著者
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NAKAMURA Tetsuro
Research Institute of Aging Science
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SHIRAI Hajime
Research Laboratory of Engineering Materials, Tokyo Institute of Technology
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SHIMIZU Isamu
The Graduate School at Nagatsuta
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Shimizu I
Osaka Univ. Osaka Jpn
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Nakamura Toshihiko
Faculty Of Engineering Tokyo Institute Of Technology
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Shimizu I
The Graduate School At Nagatsuta Tokyo Institute Of Technology
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