Narrow Band-Gap a-Si:H with Improved Minority Carrier-Transport Prepared by Chemical Annealing
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概要
- 論文の詳細を見る
a-Si:H flms with narrow optical band gap down to 1.50 eV along with low hydrogen content down to 1 at% were fabricated using the concept of "chemical annealing"; alternating deposition with exposure to atomic hydrogen. Reduction in the density of the valence band tail states was confirmed by a time-of-flight experiment which exhibited nondispersive behavior in the transient photocurrent curves and significant enhancement in drift mobility to 0.2 cm^2/V・s at 300 K for holes. Remarkable improvement in the light induced metastability wets also confirmed in some specimens annealed well, maintaining a photoconductivity 10^<-4>S/cm under AM1 white light illumination.
- 社団法人応用物理学会の論文
- 1991-02-15
著者
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SHIMIZU Isamu
The Graduate School at Nagatsuta
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HANNA Jun-ichi
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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SHIRAI Hajime
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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Shimizu I
Osaka Univ. Osaka Jpn
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Shimizu I
The Graduate School At Nagatsuta Tokyo Institute Of Technology
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Shimizu Isamu
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Shirai Hajime
The Graduate School At Nagatsuta Tokyo Institute Of Technology:(present Address) Saitama University
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Hanna J
Tokyo Inst. Technol. Yokohama Jpn
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Das Debajyoti
The Graduate School at Nagatsuka, Tokyo Institute of Technology
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Das Debajyoti
The Graduate School At Nagatsuka Tokyo Institute Of Technology:energy Research Unit Indian Associati
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