HANNA Jun-ichi | The Graduate School at Nagatsuta, Tokyo Institute of Technology
スポンサーリンク
概要
関連著者
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SHIMIZU Isamu
The Graduate School at Nagatsuta
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HANNA Jun-ichi
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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Shimizu I
Osaka Univ. Osaka Jpn
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Shimizu I
The Graduate School At Nagatsuta Tokyo Institute Of Technology
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Hanna J
Tokyo Inst. Technol. Yokohama Jpn
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小田 俊理
東工大工
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Oda S
Tokyo Inst. Technology Tokyo Jpn
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Oda S
Tokyo Inst. Technol. Tokyo Jpn
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Oda Shunri
The Graduate School At Nagatsuta Tokyo Institute Of Technology
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Oda Shunri
The Graduate School At Nagatsuta And Imaging Science And Engineering Laboratory Tokyo Institute Of T
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小田 俊理
東京工業大学量子ナノエレクトロニクス研究センター
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Shirai Hajime
The Graduate School At Nagatsuta Tokyo Institute Of Technology:(present Address) Saitama University
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Shibata N
Japan Fine Ceramics Center Nagoya Jpn
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SHIBATA Naoki
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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TANABE Akihito
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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SHIRAI Hajime
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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Shibata N
Ntt Optoelectronics Laboratories Nippon Telegraph And Telephone Corporation
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Shibata N
Japan Fine Ceramics Center Nggoya Jpn
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Shimizu Isamu
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Tanabe Akihito
The Graduate School At Nagatsuta Tokyo Institute Of Technology
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GOTOH Jun
Central Research Laboratory, Hitachi Ltd.
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Gotoh Jun
Central Research Laboratory Hitachi Ltd.
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GOTOH Jun
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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Fukuda K
Electrotechnical Lab. Ibaraki Jpn
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SHIRAI Hajime
Research Laboratory of Engineering Materials, Tokyo Institute of Technology
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FUKUDA Kaichi
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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OHTOSHI Hirokazu
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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MIYAUCHI Akihiro
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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NAKAMURAI Tetsuro
Research Laboratory of Engineering Materials, Tokyo Institute of Technology
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TOKUNAGA Hiroyuki
The Graduate School at Nagatsuta, and Imaging Socience and Engineering Laboratory,Tokyo Institute of
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KITAJIMA Nobuyuki
The Graduate School at Nagatsuta, and Imaging Socience and Engineering Laboratory,Tokyo Institute of
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KOKADO Hiroshi
The Graduate School at Nagatsuta, and Imaging Socience and Engineering Laboratory,Tokyo Institute of
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Kitajima Nobuyuki
The Graduate School At Nagatsuta And Imaging Socience And Engineering Laboratory Tokyo Institute Of
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Tokunaga Hiroyuki
The Graduate School At Nagatsuta And Imaging Socience And Engineering Laboratory Tokyo Institute Of
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Nakamura Toshihiko
Faculty Of Engineering Tokyo Institute Of Technology
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MIYAUCHI Akihiro
Hitachi Research Laboratory, Hitachi Ltd.
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Fukuda Kuniya
Department Of Engineering Physics Faculty Of Engineering Kyoto University
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Kokado Hiroshi
The Graduate School At Nagatsuta And Imaging Socience And Engineering Laboratory Tokyo Institute Of
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Miyauchi Akihiro
Hitachi Research Laboratory Hitachi Ltd.
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Das Debajyoti
The Graduate School at Nagatsuka, Tokyo Institute of Technology
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Kobayashi T
Mitsubishi Heavy Industrial Co. Ltd. Nagoya Jpn
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Das Debajyoti
The Graduate School At Nagatsuka Tokyo Institute Of Technology:energy Research Unit Indian Associati
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KOBAYASHI Tohru
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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Ohtoshi Hirokazu
The Graduate School At Nagatsuta Tokyo Institute Of Technology
著作論文
- Preparation of Polycrystalline Silicon by Hydrogen-Radical-Enhanced Chemical Vapor Deposition
- Hole Transport in a-Si:H(F) Prepared by Hydrogen-Radical-Assisted Chemical Vapor Deposition
- Preparation of Highly Photoconductive a-SiGe_x from Fluorides by Controlling Reactions with Atomic Hydrogen
- Designing New Materials with Amorphous Semiconductors : Structure and Electrical Properties of Multiply Stacked a-Si/a-SiGe_x Layers
- Highly Oriented ZnO Films Prepared by MOCVD from Diethylzinc and Alcohols
- Improvement of Photoluminescence Properties of ZnSe Film Grown by Hydrogen Radical-Enhanced Chemical Vapor Deposition Using Alternate Gas Supply and Substrate Bias Application
- Very Stable a-Si:H Prepared by "Chemical Annealing"
- Narrow Band-Gap a-Si:H with Improved Minority Carrier-Transport Prepared by Chemical Annealing
- Coherent Growth of ZnSe Thin Film at Low Growth Temperature by Hydrogen Radical Enhanced Chemical Vapor Deposition