Hole Transport in a-Si:H(F) Prepared by Hydrogen-Radical-Assisted Chemical Vapor Deposition

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1986-12-20

著者

• 小田 俊理

  東工大工

• 小田 俊理

  東京工業大学量子ナノエレクトロニクス研究センター

• Shibata N

  Japan Fine Ceramics Center Nagoya Jpn

• Oda S

  Tokyo Inst. Technology Tokyo Jpn

• Oda S

  Tokyo Inst. Technol. Tokyo Jpn

• Oda Shunri

  The Graduate School At Nagatsuta Tokyo Institute Of Technology

• SHIMIZU Isamu

  The Graduate School at Nagatsuta

• SHIBATA Naoki

  The Graduate School at Nagatsuta, Tokyo Institute of Technology

• HANNA Jun-ichi

  The Graduate School at Nagatsuta, Tokyo Institute of Technology

• MIYAUCHI Akihiro

  The Graduate School at Nagatsuta, Tokyo Institute of Technology

• TANABE Akihito

  The Graduate School at Nagatsuta, Tokyo Institute of Technology

• Shibata N

  Ntt Optoelectronics Laboratories Nippon Telegraph And Telephone Corporation

• Shimizu I

  Osaka Univ. Osaka Jpn

• Shibata N

  Japan Fine Ceramics Center Nggoya Jpn

• Oda Shunri

  The Graduate School At Nagatsuta And Imaging Science And Engineering Laboratory Tokyo Institute Of T

• MIYAUCHI Akihiro

  Hitachi Research Laboratory, Hitachi Ltd.

• Shimizu I

  The Graduate School At Nagatsuta Tokyo Institute Of Technology

• Hanna J

  Tokyo Inst. Technol. Yokohama Jpn

• Tanabe Akihito

  The Graduate School At Nagatsuta Tokyo Institute Of Technology

• Miyauchi Akihiro

  Hitachi Research Laboratory Hitachi Ltd.

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